120N120A3
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM A3-Class IGBTs VCES = 1200V IC110 = 120A VCE sat ≤ 2.20V IXGK120N120A3 IXGX120N120A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IC110
IXGK120N120A3
IXGX120N120A3
O-264
120N120A3
|
IXGX120N120A3
Abstract: IXGK120N120A3 120N120A3 PLUS247 120n120
Text: Preliminary Technical Information IXGK120N120A3 IXGX120N120A3 GenX3TM A3-Class IGBTs VCES = 1200V IC110 = 120A VCE sat ≤ 2.20V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGK120N120A3
IXGX120N120A3
IC110
O-264
120N120A3
IXGX120N120A3
IXGK120N120A3
PLUS247
120n120
|
IXGK55N120A3H1
Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
Text: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGK55N120A3H1
IXGX55N120A3H1
IC110
O-264
338B2
IXGK55N120A3H1
IXGX55N120A3H1
IXGX55N120
PLUS247
IC110
|
IXGX82N120A3
Abstract: IXGK82N120A3 82N120A3 PLUS247
Text: Preliminary Technical Information IXGK82N120A3 IXGX82N120A3 GenX3TM 1200V IGBTs VCES = 1200V IC110 = 82A VCE sat ≤ 2.05V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
|
Original
|
PDF
|
IXGK82N120A3
IXGX82N120A3
IC110
O-264
150Inductive
82N120A3
IXGX82N120A3
IXGK82N120A3
PLUS247
|
C3834
Abstract: No abstract text available
Text: Advance Technical Information MMIX1G120N120A3V1 VCES = 1200V GenX3TM 1200V IGBT w/ Diode IC110 = 105A VCE sat ≤ 2.2V (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBT for 3kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
MMIX1G120N120A3V1
IC110
IC110
C3834
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBTs w/ Diode IXGK55N120A3H1 IXGX55N120A3H1 VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGK55N120A3H1
IXGX55N120A3H1
IC110
O-264
338B2
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGR55N120A3H1 Electrically Isolated Tab Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Symbol Test Conditions VCES = 1200V IC110 = 30A VCE(sat) ≤ 2.35V ISOPLUS 247TM Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGR55N120A3H1
IC110
247TM
IF110
338B2
|
IXGR55N120A3H1
Abstract: IF110 ISOPLUS247
Text: Advance Technical Information IXGR55N120A3H1 GenX3TM 1200V IGBT w/ Diode Electrically Isolated Tab Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching VCES = 1200V IC110 = 30A VCE(sat) ≤ 2.35V ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGR55N120A3H1
IC110
247TM
IF110
338B2
IXGR55N120A3H1
IF110
ISOPLUS247
|
semikron gd-11 semikube
Abstract: No abstract text available
Text: IGD-8-326-E1F12-BH-FA Characteristics Symbol Conditions min. typ. max. Unit 1230 A 1320 A Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min 1200 920 VCES 1390 1200 A V
|
Original
|
PDF
|
IGD-8-326-E1F12-BH-FA
650Vdc,
400Vac,
10min
Px308/308
semikron gd-11 semikube
|
Untitled
Abstract: No abstract text available
Text: IGD-8-328-E1F12-BH-FA Characteristics Symbol Conditions min. typ. max. Unit 1350 A 1310 1440 A 1020 1530 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGD-8-328-E1F12-BH-FA
650Vdc,
400Vac,
10min
Px308/308
|
IXGX55N120
Abstract: IXGX55N120A3D1
Text: Advance Technical Information IXGK55N120A3D1 IXGX55N120A3D1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.2V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGK55N120A3D1
IXGX55N120A3D1
IC110
O-264
IC110
PLUS247TM
338B2
IXGX55N120
IXGX55N120A3D1
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBTs VCES = 1200V IC110 = 82A VCE sat ≤ 2.05V IXGK82N120A3 IXGX82N120A3 Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
|
Original
|
PDF
|
IC110
IXGK82N120A3
IXGX82N120A3
O-264
82N120A3
|
semikron gd-11 semikube
Abstract: No abstract text available
Text: IGD-8-426-E1F12-BH-FA Characteristics Symbol Conditions min. typ. max. Unit 1490 A 1460 1600 A 1140 1700 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGD-8-426-E1F12-BH-FA
650Vdc,
400Vac,
10min
Px308/308
semikron gd-11 semikube
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
|
Original
|
PDF
|
IXGA20N100A3
IXGP20N100A3
IXGH20N100A3
O-263
O-220
20N100A3
6-11-A
|
|
|
Untitled
Abstract: No abstract text available
Text: IGDD6-1-428-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 200 A 200 220 A 160 240 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-1-428-D1616-E1N6-DL-FA
650Vdc,
400Vac,
10min
|
Untitled
Abstract: No abstract text available
Text: IGGD6-1-328-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 170 A 160 180 A 130 200 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGGD6-1-328-D1616-E1N6-DL-FA
650Vdc,
400Vac,
10min
|
Untitled
Abstract: No abstract text available
Text: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-1-426-D1616-E1N6-DL-FA
650Vdc,
400Vac,
10min
|
semikron gd-11 semikube
Abstract: skc4m7
Text: IGD-8-328-E1F12-BH-FX Characteristics Symbol Conditions min. typ. max. Unit 830 A 830 920 A 720 1070 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES fsw
|
Original
|
PDF
|
IGD-8-328-E1F12-BH-FX
650Vdc,
400Vac,
10min
SKC4M7-40A1
e2008
semikron gd-11 semikube
skc4m7
|
b6u b6ci
Abstract: No abstract text available
Text: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-2-426-D1616-E1F12-DH-FA
650Vdc,
400Vac,
10min
Px308/308
b6u b6ci
|
Untitled
Abstract: No abstract text available
Text: IGDD6-4-328-D3816-E1F12-BL-FA Characteristics Symbol Conditions min. typ. max. Unit 630 A 610 670 A 480 710 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-4-328-D3816-E1F12-BL-FA
650Vdc,
400Vac,
10min
-4-328-D3816-E1F12-BL-FA
Px308/308
|
Untitled
Abstract: No abstract text available
Text: IGDD6-4-428-D3816-E1F12-BL-FA Characteristics Symbol Conditions min. typ. max. Unit 760 A 740 820 A 580 870 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-4-428-D3816-E1F12-BL-FA
650Vdc,
400Vac,
10min
-4-428-D3816-E1F12-BL-FA
Px308/308
|
Untitled
Abstract: No abstract text available
Text: IGDD6-4-426-D3816-E1F12-BL-FA Characteristics Symbol Conditions min. typ. max. Unit 680 A 670 730 A 520 780 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-4-426-D3816-E1F12-BL-FA
650Vdc,
400Vac,
10min
Px308/308
|
Untitled
Abstract: No abstract text available
Text: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES
|
Original
|
PDF
|
IGDD6-2-326-D1616-E1F12-DH-FA
650Vdc,
400Vac,
10min
Px308/308
|
p610
Abstract: 6MBP20RY060 7MBP75RA120 collmer igbt 6mbp15rh-060 6mbp25ra 6mbp15r 6mbp50r 7MBP150RA120 p616
Text: FOURTH GENERATION IGBT 600 VOLT, R -SER IES INTELLIGENT POWER MODULES, PT TECHNOLOGY • 50 - 300 Amp * "RH"devices are 0-20kHz operation, "RY" devices are up to 3kHz operation Device Type 6MBP15RH-060* 6MBP15RY-060* 6MBP20RH-060* 6MBP20RY-060* V dc Max. Volts
|
OCR Scan
|
PDF
|
0-20kHz
6MBP15RH-060*
6MBP15RY-060*
6MBP20RH-060*
6MBP20RY-060*
6MBP30RH-060*
6MBP30RY-060*
6MBP50RA-060
6MBP75RA-060
6MBP100RA-060
p610
6MBP20RY060
7MBP75RA120
collmer igbt
6mbp15rh-060
6mbp25ra
6mbp15r
6mbp50r
7MBP150RA120
p616
|
