3J10
Abstract: PG03JSUSC
Text: SEMICONDUCTOR PG03JSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 3J 1 0 1 2 1 No. Item Marking Description Device Mark 3J PG03JSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]
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PG03JSUSC
3J10
PG03JSUSC
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3J-2J1
Abstract: 3J-2
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-2J1 3J-2J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-2J1
3J-2
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3J-5J1
Abstract: 3J-5 u 711
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-5J1 3J-5J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-5J1
3J-5
u 711
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3J-1J1
Abstract: 3J-1
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-1J1 3J-1J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-1J1
3J-1
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3J-6J1
Abstract: 6j1 tube 3J-6
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-6J1 3J-6J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-6J1
6j1 tube
3J-6
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3J-7J1
Abstract: 3J-7 surge arrester Ac
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-7J1 3J-7J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-7J1
3J-7
surge arrester Ac
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3J-4J1
Abstract: 3J-4
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-4J1 3J-4J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-4J1
3J-4
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3J-3J1
Abstract: 3J-3
Text: Three Electrode Gas Tube Surge Arrester Part Number: 3J-3J1 3J-3J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant
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E140906
3J-3J1
3J-3
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BC858W
Abstract: No abstract text available
Text: SEMICONDUCTOR BC858W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking 3J No. 2000. 12. 27 Item Marking Description Device Mark 3 BC858W hFE Grade J A J , B(K), C(L) Revision No : 0 1/1
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BC858W
BC858W
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marking 3U 3T 3C diode
Abstract: 30BQ080 marking 3U 3T diode 30BF20 30bq040 30BQ060 30BF10 30BF100 30BF40 30BF60
Text: SMC PART MARKING CATHODE BAND SIDE INTERNATIONAL RECTIFIER LOGO 3C PART NUMBER Example: 30BQ015 PART NUMBER EXAMPLES 3C = 30BQ015 3F = 30BQ040 3H = 30BQ060 3J = 30BQ080 3P = 30BF10 3S = 30BF20 3T = 30BF40 3U = 30BF60 3V = 30BF80 3X = 30BF100
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30BQ015
30BQ040
30BQ060
30BQ080
30BF10
30BF20
30BF40
30BF60
30BF80
marking 3U 3T 3C diode
30BQ080
marking 3U 3T diode
30BF20
30bq040
30BQ060
30BF10
30BF100
30BF40
30BF60
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bc860
Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Text: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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BC857/BC858
BC859/BC860
BC857A
BC857B
BC858A
BC860B
BC860A
BC859B
BC859A
BC858B
bc860
bc858
BC857
BC857A
BC857B
BC858A
BC858B
BC859A
BC859B
BC860A
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Untitled
Abstract: No abstract text available
Text: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: 3J
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DB3X407K
UL-94
DB3X407K0L
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BC857B UNI
Abstract: BC847 BC857 BC857A BC857B BC858 BC858A BC858B
Text: BC857 BC858 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847
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BC857
BC858
BC857A
BC857B
BC858A
BC858B
BC857
BC847
OT-23
BC857B UNI
BC847
BC857A
BC857B
BC858
BC858A
BC858B
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3J marking
Abstract: BC858 MARK 01
Text: SEMICONDUCTOR BC858 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 3J 1 2 Item Marking Description Device Mark 3 BC858 hFE Grade J J, K, L * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC858
OT-23
3J marking
BC858
MARK 01
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Untitled
Abstract: No abstract text available
Text: :1 0: 41 PM COMET TETRA Register Descriptions Document Released ,1 3J ul y, 20 06 11 PM4359 Th ur sd ay COMET TETRA of Pa rtm in er In co n FOUR-CHANNEL COMBINED T1/J1/E1 TRANSCEIVER/FRAMER Released Issue No. 2: June, 2006 Do wn lo ad ed by C on te n tT ea
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PM4359
PMC-2051823,
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BC856
Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_
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BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
BC857C
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858
BC858A
BC858B
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JH-5
Abstract: 3JH45 D0-201AD
Text: TOSHIBA 3JH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3J H4 5 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = 600V ÏF AV = 3.0A trr = 200ns (Max.)
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3JH45
200ns
D0-201AD
961001EAA2'
JH-5
3JH45
D0-201AD
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LVJ DIODE
Abstract: ERC38
Text: ERC 38 ia : Outline Drawings FAST RECOVERY DIODE *1.0 I 1 28MIN — 7.5 — 28 MIN- — : Features 3J£-V ti! • X -f • S Super high speed switching. *. Marking tf Low VF in turn on A5 —3 —K: È Color code : White « iW iS High voltage by mesa design.
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ERG38
ERC38
LVJ DIODE
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 3JH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3J H4 5 SWITCHING TYPE POWER SUPPLY APPLICATIONS = 600V • Repetitive Peak Reverse Voltage Vrr m • Average Forward Current If a v = 3-0a • Very Fast Reverse-Recovery Time trr = 200ns (Max.)
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3JH45
200ns
961001EAA2'
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PDF
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Untitled
Abstract: No abstract text available
Text: 12 11 10 8 73780 ✓ MATERIAL NUMBER ASSIGNMENT 7 3 -U R I H H U- LE fr]- L g a i I C=3J- L g g i IB B I IC=ZH- U B I IIH ) I H - B )- -OPTIO NAL MARKINGS SEE NOTE 4 & MATERIAL NUMBER ASSIGNMENT r \ r i r MATERIALS: 2. FINISH:
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00076mm
SD-73780-004
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PDF
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Untitled
Abstract: No abstract text available
Text: «e a a 1981 MICRON MT4C4001 J L 1 MEG X 4 DRAM I DRAM 1 MEG x 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH 3J > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and
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MT4C4001
024-cycle
MT4C4001J)
128ms
MT4C4001J
MT4C4001J
275mW
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PDF
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Untitled
Abstract: No abstract text available
Text: 11 12 10 8 73780 ✓ MATERIAL NUMBER ASSIGNMENT 7 3 -U R I H H U- LE fr]- L g a i I C=3J- L g g i IB B I IC=ZH- U B I IIH ) I H - B )- -OPTIO NAL MARKINGS SEE NOTE 4 & MATERIAL NUMBER ASSIGNMENT MATERIALS: 2. FINISH: ' T DIM "H"
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00076mm
144-CKT
144-CIRCUIT
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mt4c1024dj7
Abstract: mt4c1024dj-7
Text: |v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply
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MT4C1024
150mW
512-cycle
200nA
18-Pin
20-Pin
125ps
MT4C1Q24L
1024L
MT4C1024L
mt4c1024dj7
mt4c1024dj-7
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7W00F
Abstract: 7S00F tunnel oven
Text: [3j 1. External and Internal Structure The drawings in Figure 3-1 show the external designs and internal structures o f various series m odels. The IC chip is set on the "bed" at the center o f the pack age. Wire leads connect the IC chip terminals to the lead frame. The package
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7S00F
7W00F
tunnel oven
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