adg421
Abstract: G421D
Text: 19-0137 ; Rev 1; 3/94 A l i f l X I A I Im proved Low-Power, CMOS Analog Sw itches w ith Latches _N e w Features ♦ Plug-In Upgrades for Industry-Standard DG421/DG423/DG425 ♦ Improved r DS ON Match Between Channels (3ft max) ♦ Guaranteed rFLAT(ON) Over Signal Range (4ft max)
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421/D
423/D
adg421
G421D
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BUZ11
Abstract: BUZ11s2
Text: SILICÓNIX INC 1ÖE D XKS3& • Ö25M73S 0014505 =1 ■ BUZ11, BUZ11S2 T-3ft -11 N-Channel Enhancement Mode Transistors TQ-220AB TO P VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS BUZ11 BUZ11S2 O •d "■ sr (A 50 0.040 30 60 0.040 30 1 GATE 2 DRAIN (Connected to TAB)
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25M73S
BUZ11,
BUZ11S2
TQ-220AB
BUZ11
2S4735
BUZ11S2
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L724
Abstract: el7240C
Text: EL7240C /EL7241C EL7240C/EL7241C HIGHPERFOfiMANCEANAUH3 INtESflAtEBCifKUtTS High Speed Coil Drivers F e a tu r e s G e n e r a l D e s c r ip t io n • • • • • • • T he EL7240C/EL7241C h igh speed coil drivers accept logic in puts w hich independently control a p air of 3ft PM O S F E T ’s.
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EL7240C
/EL7241C
EL7240C/EL7241C
EL7240C/EL7241C
EL7241C
L724
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fcqs10a045
Abstract: 10a45 IMTIA
Text: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified
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10A45VTjw150t
TQ-220AB
FCQS10A045
UL94V-0
10a45
IMTIA
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aeir
Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
Text: 1DI75H-120 75a : Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • ¡Ü IÎŒ High Voltage Including Free Wheeling Diode • A SO A '“j2 ;i' Excellent Safe Operating Area Insulated Type IffiiÉ • A p p lic a tio n s • Chopper Controls • D C t-* # ]«
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1DI75H-120
aeir
M206
pohi
111-BA
OA75
1DI75H-120C75A
DF RV transistor
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B-457
Abstract: b457 2DI100Z-140 30S3 T151 T810 SM470 B-459
Text: 2DI100Z-140 iooa Outline Drawings POWER TRANSISTOR MODULE ’ Features • BüfÆ High Voltage • 7 lJ— 's W tâ —Ki^930c Including Free Wheeling Diode • A SO ^ / av,' Excellent Safe Operating Area Insulated Type • A pplications » Power Switching
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2DI100Z-140
I95t/R89)
Shl50
B-457
b457
30S3
T151
T810
SM470
B-459
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A479
Abstract: r-14 a479
Text: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics
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ESAG63-004
500ns,
ESAC63-004
A479
r-14 a479
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diode 1G8
Abstract: nihon diode 1G8
Text: 1A 8 0 0V Axial Lead Type 1 /4 : Type : 1 G8 Nihon Inter Electronics Corporation : I* Constraction: Axial Lead, Diffusion-type Silicon Diode : -«Sniffi Application : For General Use l ü ; * Æ f ê / Maximum Rating m / Voltage Ratings ia * f s Symbol
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11M0JU,
diode 1G8
nihon diode 1G8
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KF 35 transistor
Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
Text: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications
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D11500-050
E82988
50A///S
KF 35 transistor
power bjt transistor 600v
690 lc
b20 diode
two transistors
IEBo-400mA
fblu
3A500
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power bjt transistor 600v
Abstract: 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack
Text: FU JI 6-Pack BJT 600 V 20 A 6DI20C-050 MUM STOSOÊ : Outline Drawings POWER TRANSISTOR MODULE : Features y > 9 ¥ 4 1 — Ff tM • 7 U— • h F E ^ 'iiji' • Including Free Wheeling Diode High DC Current Gain Insulated Type ' A pplica tio ns • DC * —9 U'M
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6DI20C-050
E82988
50//s
power bjt transistor 600v
6DI20C-050
bjt transistor 600v
transistor 104
VCBo-600V
fuji bjt
fuji bjt 6-pack
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200Z-100
Abstract: No abstract text available
Text: mi F U JI [IT L M g ü M lE 1-iooovJ T 200 a 2 0 U0 7^ - 1I 0U 0 U • L r» ^ U l £ /< 7 — POWER TRANSISTOR MODULE f 13 ■ 21 Outline Drawings 29 : F e a tu re s • ¡SIiJ± High Voltage V • 7 'J — 4 • ASO M S i ' KF*9j& Including Free W heeling Diode
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200Z-100
20pA/jws
200Z-100
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transistor 131-6
Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
Text: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area
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300Z-120
E82988
Tj-125Â
transistor 131-6
JET 4A
M106 TRANSISTOR
300Z-120
M106
DIODE 03
BJT safe operating area
dc motor 7 kg-cm
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10A80
Abstract: No abstract text available
Text: 10A80VT»150V FuSy Molded similar to TO -220AC 0*^ FSHS10A08 Nihon Inter Electronics Corporation Specification Construction fflìÉ Application is a -yb yr Schottky Barrier Diode k High Frequency Rectification J f c f c Ï E MAXIMUM RATINGS Ta=25'C: Unless otherwise specified
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10A80VTiw150V
T0-220AC
FSHS10A08
UL94V-0fi.
UL94V-0
10A80
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Diodo Schottky
Abstract: DIODO
Text: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified
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65VTjw150V
O-22QAC
FSQS04A065
50Hzhalf
FSQS04A065
20mVRMS
100kHz
UL94V-0
Diodo Schottky
DIODO
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CLI800
Abstract: CLI810 CLI820 CLI830 CLI835 Clairex Electronics
Text: 1TE D CLAIREX ELECTRONICS DIV I Optical Switches S 1 4 2 7 T T QDDOflSO b T - ^ '7 3 CLI800 CLI810 CLI820 CLI830 CLI835 j GENERAL DESCRIPTIONS — This optical switch series couples a gallium arsenide infrared emitting diode and a silicon phototransistor sensor. This series offers the lowest
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21427TÃ
CLI800
CLI810
CLI820
CLI830
CLI835
CLI-835
CLI835
Clairex Electronics
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Untitled
Abstract: No abstract text available
Text: E R A 8 4 - 0 9 i a s ± • £ f 'I « ^ î- k : Outl i ne D raw ings SCHOTTKY BARRIER DIODE : Feat ures • te V F ■ Low VF : M arking Ä i - 3 - K :if Super high speed sw itching. C o lo r co d e : B lue • ■ f i '- i — m fit:,* * » f t i a t i
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JI60V
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EIAJ-ETX-7001
Abstract: No abstract text available
Text: Diodes Packaging Specifications Packaging Specifications Surface mounting type •Taping Package Package Code Quantity Direction (pcs/Reel) 3000 Market area TE61 The cathode is next to the sprocket holes TL The electrode is next to the spocket holes 3000
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TL-17
TE-11
TE11C
TE-21
DA227)
DO-34
EIAJ-ETX-7001
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17ki
Abstract: 4r3t160y-080 4R3TI60Y-080 VH800 GDDS271 2u 87 x diode 2U 73 diode
Text: 4R3TI60Y-080 gafEffl * - V - * H »J DIODE and TYRISTOR MODULE I Features • i i —is 3 ^ • Glass Passivation Chip Easy Connection • Kfeiiffi Insulated Type • d d i / t # L' • d v /d t iif i* ''^ ? t ' Large d i/d t Large d v /d t • f f l i i : Applications
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4R3TI60Y-080
GDDS271
17ki
4r3t160y-080
4R3TI60Y-080
VH800
2u 87 x diode
2U 73 diode
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CS 601 thyristor
Abstract: 4R3TI20Y-080
Text: 4R3TI20Y-080 DIODE and TYRISTOR MODULE : Features 7^ • f i7 — -> 3 > f • Easy Connection • J6SI5f£ • d i/d t f Glass Passivation Chip Insulated Type i g ^ ' Large d i/d t • d v / d t i i # * ' ' ^ : # v.' Large d v /d t : Applications • -f V ' < — •?%H ffliB ig
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4R3TI20Y-080
Tc-93
00D52t
CS 601 thyristor
4R3TI20Y-080
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rlz 34 n
Abstract: RED Color band DIODES Rohm RLZ RLZ Series
Text: $ < K /D io d e s — RLZ RLZ Series Series V u= l T V ÿ \s - - y & 400mW ÆiSŒ V - K Silicon Epitaxial Planar 400mW Zener Leadless Diodes * - K • f t J f í \ t ' í í l l / / Dimensions U nit : mm) 1 ) a iffl - P S ) - 5 o 2) m'mT&io 3) 1 st Color Band
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400mW
400mW
LL-34
Bla20
rlz 34 n
RED Color band DIODES
Rohm RLZ
RLZ Series
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BI 344 TRANSISTOR
Abstract: transistor 3Ft B341
Text: 1 D I 3 M P - 1 2 3 A ï ± , , _ . ^ : Outline Drawings POW ER T R A N SIST O R M ODULE •¡HJi: : Features • hFE * ''« l' High DC Current Gain • « » ¡» ■ ftB E n rfll 2M0 : Applications "TI • i/L ffi'f w < — 9 General Purpose Inverter
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E82988
130S3-t
95t/R89
Shl50
BI 344 TRANSISTOR
transistor 3Ft
B341
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1FI250B-060
Abstract: No abstract text available
Text: 1 FI250B-060 250a ^ • *± i W ’+ S i : O u tlin e D r a w in g s FAST RECOVERY DIODE MODULE ■ 4# : Features Short Reverse Recovery Time • t&mimtfm.'M Variety of Connection Menu •mm Insulated Type I Applications • Arc-Welders • Kffl • Free-Wheeling Diode
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FI250B-060
50/60HZ
300C30C3
1FI250B-060
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UJ45
Abstract: ERC80M-004 T460 017t
Text: ERC80M -004 5 a y 3 7 h t - ^ i J T f 'i't - Y m ftW t > £ : O u tlin e D ra w in g s SCHOTTKY BARRIER DIODE : F e a tu re s In su la te d p a cka g e by fu lly m o ld in g . • fl&Vr L o w Vp m m m & M C onnection Diagram S u p e r h ig h speed s w itc h in g .
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500ns
EgTa5S35#
11S19^
I95t/R89)
UJ45
ERC80M-004
T460
017t
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2FI200A-060
Abstract: AC1500V inverter lg ig 10 mfk
Text: 2FI200A-060 2 x 200A w : ± ' <r7 — 3- — ) V )v : Outline Drawings FAST RECOVERY DIODE MODULE : Features • J f i l S h o r t + Reverse Recovery Time Large Current Capacitance • Variety of Conection Menu • Insulated Type *. Applications • V V V F -f >'< — 9
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2FI200A-060
00O000C3OOC3
AC1500V
inverter lg ig
10 mfk
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