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    3FT 05 TRANSISTOR Search Results

    3FT 05 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3FT 05 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


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    PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    pt100 interface to pic

    Abstract: pt100 amplifier schematic pt100 sensor interface with microcontroller pt100 pic pt100 adc microchip USB PIC18F2550 assembly .asm connection between Pt100 to opamp pt100 rtd spi PT100 RTD USB to SPI PIC18F2550 assembly .asm
    Text: PT100 RTD Evaluation Board User’s Guide 2007 Microchip Technology Inc. DS51607B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF PT100 DS51607B DS51607B-page pt100 interface to pic pt100 amplifier schematic pt100 sensor interface with microcontroller pt100 pic pt100 adc microchip USB PIC18F2550 assembly .asm connection between Pt100 to opamp pt100 rtd spi PT100 RTD USB to SPI PIC18F2550 assembly .asm

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


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    PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    2N3930

    Abstract: 2N4033
    Text: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300


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    PDF T0-18 2N3930 2N4033

    AN7260

    Abstract: RFH45N05 RFH45N06
    Text: Standard Power MOSFETs RFH45N05, RFH45N06 File N u m be r 1635 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 45 A, 50 V - 60 V rosioni = 0.040 Q Features: • • ■ m ■ • S O A is p o w e r - d is s ip a tio n lim ite d


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    PDF RFH45N05, RFH45N06 RFH45N05 RFH45N06" AN-7254 AN-7260. 92cs-57145 AN7260 RFH45N06

    6DI30B-050

    Abstract: IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149
    Text: 6DI3OB-O5CK30A — )v POWER TRANSISTOR MODULE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls • 1 7 3 > Air Conditioners


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    PDF E82988 I95t/R89) 6DI30B-050 IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149

    1MBH60D-090A

    Abstract: IGBT 900v 60a 1mbh60d090a 30S3 T151 T460 T930 MBH60D-090A
    Text: 1MBH60D-090A I 'i l G B T IG B T INSULATED GATE BIPOLAR TRANSISTOR : Features •i H i g • h Speed Switching Low Saturation Voltage • ¡ iïA^' Îr—hÎSÎÆ MOS>r— •/ j S m a l l High Impedance Gate Package : Applications • ll/iE & S IS ilti


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    PDF 1MBH60D-090A 50//s) I95t/R89) Shl50 1MBH60D-090A IGBT 900v 60a 1mbh60d090a 30S3 T151 T460 T930 MBH60D-090A

    Untitled

    Abstract: No abstract text available
    Text: WhatH EW LETT A "H MPACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 516 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 516 Series is a thin-film bipolar RF amplifier that uses


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    transistor B324

    Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
    Text: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools


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    PDF 1DI200ZN-120 E82988 l95t/R89 Shl50 transistor B324 B324 transistor b324 B-324 diode ZENER EJJ M115

    j1n transistor

    Abstract: BTP 30 diode B199 BTP DIODE TRANSISTOR 3FT 81
    Text: 1DI5OH-O55 50a /< 7 - / \ 7 — )\ s POWER TRANSISTOR MODULE ^Features • ¡SiiJŒ High Voltage • V ' s W f â —Kl*3/K • A S O A 'T k v ,' Including Free W heeling Diode Excellent Safe Operating Area Insulated Type l.fflJÊ - Applications Chopper Controls


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    PDF 1DI5OH-O55 0000C300000 j1n transistor BTP 30 diode B199 BTP DIODE TRANSISTOR 3FT 81

    d 5287 transistor

    Abstract: 2N6127 transistor c 5287 A12LC
    Text: TYPE 2N6127 P-N-P SILICON POWER TRANSISTOR H IG H -F R E Q U E N C Y , HIGH-PO W ER T R A N S IS T O R W ITH C O M P U T E R -D E S IG N E D IS O T H E R M A L G E O M E T R Y 3 05 H mc < < '" S ra £ « 40 mJ Reverse Energy Rating with lc = 20 A and 4 V Reverse Bias


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    PDF 2N6127 2N6128 d 5287 transistor transistor c 5287 A12LC

    Untitled

    Abstract: No abstract text available
    Text: 6DI3OB-O5CK30A — )v P O W E R T R A N S IS T O R M O D U LE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls


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    PDF 6DI3OB-O5CK30A) I95t/R89)

    Untitled

    Abstract: No abstract text available
    Text: D 1 I O 3 O Z - 1 2 O 3 a )V ^<7 — : Outline Drawings P O W ER TRA N SISTO R MODULE : Features • SBfiJGE High Voltage • 7 'J — 'J V • ASO Jb'"J2iL' -f Krt/BE Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lica tio n s


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    PDF l95t/R89

    RCA-CD4518

    Abstract: 3FT 87 and/icl+7060
    Text: CD451ÖB, CD4520B Types 4 SI 8 B CMOS Dual Up-Counters High-Voltage Types 20-Volt Rating Features: CD4518B Dual B CD Up-Counter CD4520B Dual Binary Up-Counter • Medium-spaed operation 6-MHz typical dock frequency at 10 V ■ Positive- or negative^dge triggering


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    PDF CD451 CD4520B 20-Volt CD4518B RCA-CD4518 CD4520 4S18BH 4520BH 3FT 87 and/icl+7060

    40w bass amplifier using a 12v dc supply

    Abstract: LA4630 12v 40W stereo amplifier LA4630N
    Text: Ordering number: E N 3 2 2 7 A M o n o lith ic L in e a rle LA4630N N p.3227A SANYO- 9V/12V 3-Dimension Power IC for _ Radio Cassette Recorders Features • Stereo section 9 V /3 0 3W X2, 1 2 V /3 fl 5W X2: noise filter capacitorless power » Super bus section 9 V /3 ft 6W, 12V/311 10W: output capacitor, B-S capacitorless power


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    PDF LA4630N V/12V 2V/311 40w bass amplifier using a 12v dc supply LA4630 12v 40W stereo amplifier LA4630N

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


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    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    SC1741

    Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
    Text: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2


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    PDF SIP10) 801BX100) Nd022-01 dd022-01 dd92l-01 SC1741 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL