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    3DD301B

    Abstract: tc2530
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD301B DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 50V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.


    Original     		PDF 3DD301B 3DD301B tc2530

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747