Untitled
Abstract: No abstract text available
Text: 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D REF. B A B C D E F G H J K Collector 2 E C G H F 3
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3DD13003B
400mA
500mA
100mA
100mA,
15-Jun-2011
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR NPN 1. EMITTER FEATURES 2. COLLECTOR • power switching applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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3DD13003B
100mA,
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3DD13003B
Abstract: 3DD13003 npn transistors 400V 1A To92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR NPN TO-92 FEATURES 1. EMITTER • power switching applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BASE Symbol Parameter
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3DD13003B
100mA,
3DD13003B
3DD13003
npn transistors 400V 1A To92
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR NPN TO-92 FEATURES • 1. EMITTER High total power disspation.(pc=0.75w) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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3DD13003B
1000mA
1000mA,
250mA
100mA
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Untitled
Abstract: No abstract text available
Text: WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • power switching applications TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage
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3DD13003B
100mA,
10-Nov-2010
270TYP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR NPN 1. EMITTER FEATURES 2. COLLECTOR • power switching applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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3DD13003B
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3DD13003B
Abstract: npn transistors 700V 1A 3DD13003 npn transistors 400V 1A To92
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn 3DD13003B TRANSISTOR NPN TO-92 FEATURES 1. EMITTER • power switching applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BASE
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3DD13003B
100mA,
3DD13003B
npn transistors 700V 1A
3DD13003
npn transistors 400V 1A To92
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npn transistors 400V 1A To92
Abstract: No abstract text available
Text: 3DD13003B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage
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3DD13003B
25MAX
100mA,
npn transistors 400V 1A To92
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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