3DA752
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DA752 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1.2 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range
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O-251
3DA752
O-251
500mA
3DA752
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3DA752
Abstract: No abstract text available
Text: 3DA752 3DA752 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1.2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 2 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃
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3DA752
O-251
500mA
3DA752
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3DA752
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DA752 TO-251 TO-252-2L TRANSISTOR NPN FEATURES Power dissipation 123 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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O-251/TO-252-2L
3DA752
O-251
O-252-2L
500mA
3DA752
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Untitled
Abstract: No abstract text available
Text: 3DA752 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V
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O-251/TO-252-2L
3DA752
O-251
O-252-2L
500mA
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3DA752
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DA752 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1.2 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO:
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O-251
3DA752
O-251
500mA
3DA752
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