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    3BT PNP Search Results

    3BT PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
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    3BT PNP Price and Stock

    Texas Instruments CP3BT26Y98NEP/NOPB

    RF Microcontrollers - MCU Reprogrammable Connectivity Processor with Bluetooth, USB, and CAN Interfaces 144-LQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CP3BT26Y98NEP/NOPB
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    • 100 $25.94
    • 1000 $24.87
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    3BT PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3bt

    Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
    Text: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface


    Original     		PDF BC856W BC857W OT-323 BC857W 200Hz BC856AW BC857AW BC856BW transistor 3bt marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor

    transistor 3bt

    Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
    Text: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,


    Original     		PDF BC856W BC857W OT-323 100MHz 200Hz BC856BW BC857BW BC856AW transistor 3bt marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor

    marking 3ft sot323

    Abstract: BC856BW BC846W BC847W BC848W BC856AW BC856W BC857AW BC857W BC858W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W; BC857W; BC858W PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 07 Philips Semiconductors Product specification


    Original     		PDF M3D187 BC856W; BC857W; BC858W OT323 BC846W, BC847W marking 3ft sot323 BC856BW BC846W BC848W BC856AW BC856W BC857AW BC857W BC858W

    BC857BW-3FT

    Abstract: BC856BW TRANSISTOR 3gt BC846W BC847W BC848W BC856AW BC856W BC857AW BC857W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W; BC857W; BC858W PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 07 Philips Semiconductors Product specification


    Original     		PDF M3D187 BC856W; BC857W; BC858W OT323 BC846W, BC847W BC857BW-3FT BC856BW TRANSISTOR 3gt BC846W BC848W BC856AW BC856W BC857AW BC857W

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers


    OCR Scan     		PDF DD315 BFQ54T BFQ34T. 0031ST4 BB339

    transistors BC 23

    Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
    Text: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495


    OCR Scan     		PDF r-31-0' BF494 BF494A BF494B BF495C BF495D transistors BC 23 transistors BC 557b BHARAT elek 547B 548B 549B BC547A

    BFQ34T

    Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
    Text: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in


    OCR Scan     		PDF BFQ54T BFQ34T. D31SCÃ BFQ54T MBB339 BFQ34T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation


    OCR Scan     		PDF 10kiJ, Q62702-C2495 OT-363

    727 Transistor power values

    Abstract: transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor BC856BW
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W; BC858W FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 80) 1 • S-mini package. 2 emitter 3 collector base APPLICATIONS • General purpose switching and amplification.


    OCR Scan     		PDF BC856W; BC857W; BC858W OT323 BC846W, BC847W BC848W. BC856W BC856AW BC856BW 727 Transistor power values transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor

    Untitled

    Abstract: No abstract text available
    Text: TIP41 ;A TIP41B;C PHILIPS INTERNATIONAL SbE D • 7110asb 00H3S1Ô ^3^ ■ PHIN T -3J- H SILICON EPITAXIAL B A SE PO W ER TR A N SIST O R S N PN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP 4 2 series.


    OCR Scan     		PDF TIP41 TIP41B 7110asb 00H3S1Ô TIP41 O-220. 7110fl2b DD43523 T-33-n

    BCW61RA

    Abstract: bcx71 bcx71rh BCX71C BCW60
    Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


    OCR Scan     		PDF BCW61, BCX71 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71R. BCW61RA bcx71rh BCX71C

    BC250A

    Abstract: No abstract text available
    Text: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura­


    OCR Scan     		PDF BC250A BC250B BC250C BC327 BC327-16 BC327-25 BC327-40 BC328 BC328-16 BC328-25 BC250A

    TIP41 amplifier

    Abstract: TIP41 of TIP41 TIP41B TIP42 TIP42 ST TIP42 philips T-33-H
    Text: TIP41 ;A TIP41 B;C PHILIPS INTERNATIONAL SbE ]> • 711Dä2b 0043510 W HPHXN~ T -J J -M SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP42 series.


    OCR Scan     		PDF TIP41 TIP41 7110fl2b TIP42 O-220. 7Z82918 711065b TIP41 amplifier of TIP41 TIP41B TIP42 ST TIP42 philips T-33-H

    BCX71RG

    Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
    Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


    OCR Scan     		PDF BCW61, BCX71 D002L00 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71RG BCW61RA BCW61RD transistor marking bh ra BCW61A BCW61B

    Untitled

    Abstract: No abstract text available
    Text: SILICON M ONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8066AS TENTATIVE DATA DUAL LOWSIDE DRIVER Th e TA 8 0 6 6 A S is a 0.3A lo w side driver co n ta in in g tw o circuits in o n e package. T h e in p u t level is T T L com p atib le so th a t th e o u tp u t can


    OCR Scan     		PDF TA8066AS R0T7247 2003T T0T7547 JCH721 002DD41

    Untitled

    Abstract: No abstract text available
    Text: DABIC-1% 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS The A 6809- and A 6810- devices combine 10-bit CMOS sWft registers, accompanying data latches and control circuitry w tih jH ro la r sourcing outputs and pnp active pull downs. Designed p r im lm p » drive vacuum-fluorescent displays, the 60 V and -40 i^ f c p b ^ r a t i n g s


    OCR Scan     		PDF 10-BIT A6810 A6809xb$ 6739b

    triac BT 139

    Abstract: BT 139 Triac BTA06 BTB06 T0220AB
    Text: SGS-THOMSON BTA06 T/D/S/A BTB06 T/D/S/A SENSITIVE GATE TRIACS FEATURES • VERY LOW Igt = 10mA max ■ LOW Ih = 15mA max ■ BTA Fam ily: INSULATING VOLTAGE = 2500V r MS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per­


    OCR Scan     		PDF BTA06 BTB06 E81734) BTA/BTB06 T0220AB T0220AB triac BT 139 BT 139 Triac

    BTB06-600

    Abstract: BTB60
    Text: BTA06 T/D/S/A BTB06 T/D/S/A SGS-mOMSON M M iü lg ïM K SENSITIVE GATE TRIACS FEATURES • VERY LOW Iqt = 10mA max ■ LOW Ih = 15mA max ■ BTA Family: INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per­


    OCR Scan     		PDF BTA06 BTB06 E81734) BTA/BTB06 00771bb T0220AB DD771b7 BTB06-600 BTB60

    9931 morocco

    Abstract: L6504 si24
    Text: Æ T S C S 'T H O M S O N EiilOg^OllLKgTr^QHgi L6504 SOLENOID CONTROLLER PRELIM IN ARY DATA . SWITCH MODE CURRENT REGULATION •TTL COMPATIBLE LOGIC INPUTS . DRIVES ONE OR TWO EXTERNAL POWER TRANSISTORS ■VERY PRECISE ON-CHIP REFERENCE . ANALOG CURRENT CONTROL INPUT


    OCR Scan     		PDF L6504 L6504 9931 morocco si24

    Untitled

    Abstract: No abstract text available
    Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.


    OCR Scan     		PDF BFR93A BFT93.

    TRANSISTOR SMD MARKING CODE XI

    Abstract: No abstract text available
    Text: • 0235bOS OD^bbOl 422 SIEMENS 5-V L ow -D rop Fixed V oltage R egulator T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection


    OCR Scan     		PDF 0235bOS Q67000-A9190 Q67006-A9173 Q67006-A9288 P-DSO-14-4 -20-G Q67006-A9192 235bOS TRANSISTOR SMD MARKING CODE XI

    BPNPA16P

    Abstract: No abstract text available
    Text: Data Sheet November 1997 microelectronics group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,


    OCR Scan     		PDF 26LS31 TT350 BPNPA16P

    diac SBS 14

    Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
    Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation


    OCR Scan     		PDF

    2N329A

    Abstract: 2N328A JAN MIL-S-18500 2N328A 2N329A JAN ic tba 507 a
    Text: MIL-S- 19500/ 110C li m i irr? SUPERSEDING MIL-6- 19500/ HOB 8 November 1965 MUJTARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N328A AND 2N329A Thla specification Is mandatary for uac by all Departmenta and Agende» of the Department of Deiena«.


    OCR Scan     		PDF MIL-6-19500/HOC MXL-6-19500/110B 2N328A 2N329A 2N328A) 2N329A) 2N329A 2N328A JAN MIL-S-18500 2N329A JAN ic tba 507 a