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    MLL34

    Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
    Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max


    OCR Scan     		PDF BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking

    MMBTH24L

    Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking


    OCR Scan     		PDF b3b72SiJ OT-23 MMBT2369L BSV52L MMBT2222L MMBT2222AI. MMBT3904T MMBT3638 MBT3640L MBT4403L MMBTH24L MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA30N06E Fully Isolated TMOS E-FET™ High Energy Power MOSFET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.025 OHM MAX This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		PDF MTA30N06E 3b725M G1D301S

    2N3501

    Abstract: 2N3501 MOTOROLA 2N3500 MOTOROLA 2n3500
    Text: 2N3500 2N3501* M A XIM U M RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 150 Vdc Collector-Base Voltage v CBO 150 Vdc Emitter-Base Voltage vebo 6.0 Vdc Rating Collector C u rrent— Continuous :C 300 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C


    OCR Scan     		PDF 2N3500 2N3501* O-205AD) L3b72S4 2N3501 2N3501 MOTOROLA 2N3500 MOTOROLA

    MRF522

    Abstract: MRF524 MRF5211L MARKING H3B MRF521
    Text: I MOTOROLA SC X S T R S / R F 4bE D • b3b72SM QOIHTE? MOTOROLA fi ■ M O T b "P -3 1 - 0 SEMICONDUCTOR TECHNICAL DATA MRF521 IVIRFC 521 M RF522 M RF524 M RF5211L Th e RF Line PIMP S ilic o n H igh-Frequency T ra n sisto rs . . . desig ned p rim arily for use in the high-gam , low -noise sm all-sig n a l am p lifiers for


    OCR Scan     		PDF b3b72SM OT-143 MRF521 MRF522 MRF524 MRF520 MRF5211L MARKING H3B

    BF546

    Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
    Text: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)


    OCR Scan     		PDF BFJ309L BFJ310L BF5486L BF5457L BF5459L OT-23 OT-143 MLL-34 OT-223 SO-16 BF546 marking 6k sot-23 package F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot