3B5 TRANSISTOR Search Results

3B5 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

3B5 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IT136 Abstract: IT137 IT138 IT139 XIT137 XIT138 Text: IT136-IT139 CAL06IC CORP_ M8E D • W 3B5 000D3bS l « C 6 C calocft Monolithic Dual PNP General Purpose Amplifier CORPORATION V IT136-IT139 FEATURES • • • • • High Gain at Low Current Low Output Capacitance Tight Ib Match Tight V b e Tracking	OCR Scan	IT136-IT139 IT136, IT137 IT139 IT138 10jjA, 10jiA, IT136 IT137 IT138 IT139 XIT137 XIT138	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz	OCR Scan	l4475fl4 AT-60585	PDF
Untitled Abstract: No abstract text available Text: CL-GD6420 Preliminary Data Sheet FEATURES • Slngle-chlp VGA controller ■ Pin-compatible with the CL-GD6410 In 2-DRAM applications ■ Up to 1 Mbyte 2,4, or 8 256K x 4 ORAM Video Memory ■ Extended resolution up to 1024 x 768 with 256 colors on CRT ■ Simultaneous display on LCD panel and CRT	OCR Scan	CL-GD6420 CL-GD6410	PDF
toshiba laptop battery pack pinout Abstract: No abstract text available Text: CL-GD6410 'CIRRUS LOCK: Preliminary Data Sheet FEATURES • Slngle-chlp VGA controller ■ ■ ■ ■ 100% IBM -VGA-hardware-compatlble Simultaneous CRT and LCD SlmulSCAN operation Two 256K x 4 DRAM video memory for small form factor Integrates RAMDAC	OCR Scan	CL-GD6410 64-shade toshiba laptop battery pack pinout	PDF
laptop cq 42 MOTHERBOARD VOLTAGE diagram Abstract: IBM t 42 laptop ac adapter schematics diagram laptop motherboard chip level crb 8088 motherboard schematics IBM computer schematics 8088 D-6412 cl-gd64 isa bus interfacing with microprocessor 8088 IBM PC xt schematics Crystal aa class lord Text: CL-GD6412 'CIRRUS LOGIC Preliminary Data Sheet FEATURES LCD VGA Controller for Mixed Voltage Notebook Computers • Single-chip VGA Controller ■ Mixed voltage: 3.3 or 5.0 volts on any major Interface - Supports JEDEC Number 8 LVCMOS standard 3.3V +/- 0.3V	OCR Scan	CL-GD6412 CL-GD6412 CL-GD6412, laptop cq 42 MOTHERBOARD VOLTAGE diagram IBM t 42 laptop ac adapter schematics diagram laptop motherboard chip level crb 8088 motherboard schematics IBM computer schematics 8088 D-6412 cl-gd64 isa bus interfacing with microprocessor 8088 IBM PC xt schematics Crystal aa class lord	PDF
sot-23 Marking pcA Abstract: No abstract text available Text: SIEMENS NPN Silicon Darlington Transistors BCV 27 BCV47 • For general A F applications • High collector current • High current gain • Complementary types: B C V 26, B C V 46 PNP Type Marking Ordering Code (tape and reel) PinC :onfigur ation 2 1 3	OCR Scan	BCV47 Q62702-C1474 Q62702-C1501 OT-23 flS35fe BCV27 sot-23 Marking pcA	PDF
laptop motherboard chip level crb Abstract: CL-GD5320 LAPTOP Motherboard CHIP LEVEL book GD610 CL-GD610 gd5320 GD6340 gd510 CL-GD6410 cirrus logic gd610 Text: CL-GD6420 Data Book FEATURES • Single-chip VGA controller ■ Pin-compatible with the CL-GD6410 in 2-DRAM applications High-Resolution LCD VGA Controller for Notebook Computers ■ Up to 1 Mbyte 2, 4, or 8 256K x 4 DRAM Video Memory ■ Extended resolution up to 1024 x 768 with 256 colors on	Original	CL-GD6420 CL-GD6410 CL-GD6420 CL-GD6410, laptop motherboard chip level crb CL-GD5320 LAPTOP Motherboard CHIP LEVEL book GD610 CL-GD610 gd5320 GD6340 gd510 cirrus logic gd610	PDF
siemens BL 350 Abstract: marking W4s FET marking code 365 npn fet transistor marking code HF d5 transistor npn AFC marking Siemens transistors rf transistor 3b5 00jT Text: B CR 400 P relim in ary Data A c tiv e Bias C o n tro lle r C h a ra c te ris tic s • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A p p lic a tio n notes • Stabilizing bias current of NPN transistors and FET's from	OCR Scan	200mA 235b05 7TM72 siemens BL 350 marking W4s FET marking code 365 npn fet transistor marking code HF d5 transistor npn AFC marking Siemens transistors rf transistor 3b5 00jT	PDF
D72F5T1 Abstract: D72F5T2 D73F5T1 Text: HARRIS SEMICOND SECTOR F ile Num ber 2363 SbE D • 43G2271 0040flS4 42e} HIHAS D72F5T1, D72F5T2 7 = 3 5 - \3 5-Ampere Silicon N-P-N Power Transistors TER M IN AL DESIG N ATIO N Features: ■ Low Vcs sat m Fast switching speed ■ Complementary to D73F5T1,2	OCR Scan	43G2271 0040flS4 D72F5T1, D72F5T2 D73F5T1 D72F5T1 D72F5T2 O-251	PDF
f173 Abstract: No abstract text available Text: SG S-TH O M SO N S D 1 2 7 5 -0 1 m RF & MICROWAVE TRANSISTO RS VHF MOBILE APPLICATIONS 1 60 MHz 13.6 VOLTS COMMON EMITTER p OUT = 40 W MIN. WITH 9.0 dB GAIN PIN CONNECTION V \ DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF	OCR Scan	SD1275-01 f173	PDF
Untitled Abstract: No abstract text available Text: • bbS3T31 Q 0 2 S W T45 W A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SM D envelope SOT-223 . Designed prim arily fo r high-speed switching and driver applications.	OCR Scan	bbS3T31 PZT2907 PZT2907A OT-223)	PDF
smd transistor 2t1 Abstract: smd 3b5 PZT2907 transistor 3b5 smd PZT2907A t45 sot Text: • bbS3T31 GÜ25Iîcn T45 « A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SMD envelope SO T-223 . Designed prim arily fo r high-speed switching and driver applications.	OCR Scan	bbS3131 PZT2907 PZT2907A OT-223) OT-223 smd transistor 2t1 smd 3b5 PZT2907 transistor 3b5 smd PZT2907A t45 sot	PDF
Untitled Abstract: No abstract text available Text: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY	OCR Scan	SD1680 SD1680 1994SGS-THOMSON 0D70b77	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b	OCR Scan	O-220 C67078-S1321-A2 023SbD5 OOA4471	PDF

Untitled Abstract: No abstract text available Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.	OCR Scan	BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F,	PDF
Untitled Abstract: No abstract text available Text: 4302271 00S4453 42t • HAS RFK45N05 H a r r is RFK45N06 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 4 A E • 45 A , 5 0 V and 6 0 V • l'DS on = 0 .0 4 0 ÎÎ • S O A is P o w er-D issip atio n Lim ited	OCR Scan	00S4453 RFK45N05 RFK45N06 RFK45N05 RFK45N06 430EE71 05445b RFK45N05, 92CS-Ã	PDF
transistor A4t 85 Abstract: 3b5 transistor transistor A4t 45 transistor A4t Text: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLU30/12 OT-119) 711GfiEti transistor A4t 85 3b5 transistor transistor A4t 45 transistor A4t	PDF
t07 transistor Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile	OCR Scan	bbS3T31 BLU30/28 BLU30/28 OT119) t07 transistor	PDF
MCA45T Abstract: capacitor philips ll Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	711002b BLU30/28 BLU30/28 OT119) 711Dfl5b 0Db2735 MCA45T capacitor philips ll	PDF
capacitor 104 PF disc Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331 Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	BLU30/28 BLU30/28 OT119) capacitor 104 PF disc transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b 'Ì E D • ^53^31 OOE fiôEM T 3 0 I B L U 3 U /1 i> I APX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 4 7 0 M Hz communications band. Features:	OCR Scan	LU3U/12 OT-119) BLU30/12	PDF
mda324 Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327	PDF
Untitled Abstract: No abstract text available Text: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain	OCR Scan	2SD1270 2SB945 2sdi27o	PDF
BU508A Abstract: BU508D BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 transistor BU508D BU-508A Text: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in S O T 9 3 A envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The B U 508 D has an integrated efficiency diode.	OCR Scan	BU508A; BU508D OT93A BU508D BU508D) 711002b DD77473 BU508A BY223 philips bu508a bu50ba diode BY223 BU508D transistor transistor BU508D BU-508A	PDF

3B5 TRANSISTOR Search Results

3B5 TRANSISTOR Result Highlights (5)

3B5 TRANSISTOR Datasheets Context Search

IT136

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toshiba laptop battery pack pinout

laptop cq 42 MOTHERBOARD VOLTAGE diagram

sot-23 Marking pcA

laptop motherboard chip level crb

siemens BL 350

D72F5T1

f173

Untitled

smd transistor 2t1

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transistor A4t 85

t07 transistor

MCA45T

capacitor 104 PF disc

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mda324

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BU508A