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    3A200 Price and Stock

    Kyocera AVX Components 06033A200JAT2A

    CAP CER 20PF 25V C0G/NP0 0603
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    DigiKey 06033A200JAT2A Cut Tape 37,167 1
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    06033A200JAT2A Digi-Reel 37,167 1
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    06033A200JAT2A Reel 36,000 4,000
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    Avnet Americas 06033A200JAT2A Ammo Pack 13 Weeks, 3 Days 1
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    06033A200JAT2A Reel 12 Weeks 4,000
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    Mouser Electronics 06033A200JAT2A 28,971
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    Newark 06033A200JAT2A Cut Tape 6,615 1
    • 1 $0.022
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    Bristol Electronics 06033A200JAT2A 4,000
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    Avnet Asia 06033A200JAT2A 14 Weeks 4,000
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    Kyocera AVX Components 06033A200FAT2A

    CAP CER 20PF 25V NP0 0603
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    DigiKey 06033A200FAT2A Cut Tape 15,113 1
    • 1 $0.45
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    06033A200FAT2A Digi-Reel 15,113 1
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    06033A200FAT2A Reel 12,000 4,000
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    Mouser Electronics 06033A200FAT2A 9,423
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    GCT Semiconductor Inc FFC3A20-09-G

    CONN FFC FPC VERT 9POS 1MM SMD
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    DigiKey FFC3A20-09-G Digi-Reel 2,973 1
    • 1 $0.36
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    FFC3A20-09-G Cut Tape 2,973 1
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    • 10 $0.294
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    FFC3A20-09-G Reel 1,500 1,500
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    Newark FFC3A20-09-G Reel 1,500 1,500
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    FFC3A20-09-G Cut Tape 1,465 1
    • 1 $0.535
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    TME FFC3A20-09-G 1,390 1
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    NetSol Co Ltd S3A2004V0M-AI1AT

    MRAM MEMORY IC 2MBIT QSPI 3.3V 1
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    DigiKey S3A2004V0M-AI1AT Cut Tape 878 1
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    S3A2004V0M-AI1AT Digi-Reel 878 1
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    TE Connectivity 3504G3A200RFTDF

    RES 200 OHM 1% 6W 2512
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    DigiKey 3504G3A200RFTDF Cut Tape 427 1
    • 1 $5.71
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    3504G3A200RFTDF Digi-Reel 427 1
    • 1 $5.71
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    Mouser Electronics 3504G3A200RFTDF 409
    • 1 $5.71
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    Master Electronics 3504G3A200RFTDF
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    Find more 3A200 price and stock on Findchips.com

    3A200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3A200 RPM Micro 3.0A Iout, 200V Vrrm General Purpose Silicon Rectifier Scan PDF

    3A200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Galaxy Power GPS 4812

    Abstract: ks13385 CC109133113 gps 4812 GALAXY MILLENNIUM Lineage Power 150A Bullet Breaker Kit 2-Pole CC848805160 108971680 GALAXY MILLENNIUM Controller Product Manual Galaxy Power
    Text: PRODUCT OVERVIEW GPS 4812/24 Galaxy Power System -48V DC Medium Power Plant Benefits Reliability • Medium power applications requiring 1-phase or 3-phase 240 Vac input – Delivers decades of service • Streamlined system control and monitoring – NEBS level 3 certified


    Original     		877-LINEAGE Galaxy Power GPS 4812 ks13385 CC109133113 gps 4812 GALAXY MILLENNIUM Lineage Power 150A Bullet Breaker Kit 2-Pole CC848805160 108971680 GALAXY MILLENNIUM Controller Product Manual Galaxy Power PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, PDF

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G PDF

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


    Original     		S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300 PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


    Original     		S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N PDF

    MB96F34

    Abstract: ILM 3.01 mark sheet SK-16FX-100PMC MB96F346 MB96F348T 16-FX 0043C MB96F USB V1.1 Device MB96f35
    Text: Fujitsu Microelectronics Europe Application Note MCU-AN-300235-E-V26 F²MC-16FX FAMILY 16-BIT MICROCONTROLLER ALL SERIES SETUP AND DEBUGGING WITH EUROSCOPE APPLICATION NOTE 16FX- Setup and Debugging with EUROScope Revision History Revision History Date 2007-05-15


    Original     		MCU-AN-300235-E-V26 MC-16FX 16-BIT MB96350 MB96370 MB96380 MB96390 MB96F34 ILM 3.01 mark sheet SK-16FX-100PMC MB96F346 MB96F348T 16-FX 0043C MB96F USB V1.1 Device MB96f35 PDF

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


    Original     		S70GL01GN00 2B60000 S29GL512N gl512 2200-0002 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    S29GL512N datasheet

    Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL512P, S29GL256P, S29GL128P S29GL512N datasheet GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL256N S29GL512N PDF

    gl256N

    Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N gl256N S29GL512N datasheet S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N PDF

    2C200

    Abstract: S29GL S29GL128P S29GL512P S29GL128N S29GL256N S29GL256P S29GL512N S29GL-N S29GL-P
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, 2C200 S29GL S29GL128P S29GL128N S29GL256N S29GL256P S29GL512N S29GL-P PDF

    A 27631

    Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A1 27631A1 A 27631 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0 PDF

    S29GL512N datasheet

    Abstract: Spansion S29GL256N S29GL-N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL512N datasheet Spansion S29GL256N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_ PDF

    JS28F512M29EWL

    Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F512M29EWL JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW PDF

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 11-Apr-2011 PC28F00AM29EWHB JS28F512 JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29 PDF

    JS28F512M29

    Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
    Text: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings


    Original     		512Mb: M29AW 512Mb x8/x16, 100ns 110ns 512-word 128KB/64 09005aef8462ccad/ZIP 09005aef8462cca4 JS28F512M29 M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A PDF

    s29gl512

    Abstract: S29GL128N S29GL256N S29GL512N S29GL-N S29GL-P 0060000-007FFFF
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P 0060000-007FFFF PDF

    Cutler-Hammer

    Abstract: NH3 GL-GG TYCO 596A RECTIFIER LS CIRCUIT BREAKERS KS-20472 THHN 6 str green kic 125 hot air gun fan controller circuit G488 N 847568920
    Text: CB Architecture TS 208/240V TS 480V Battery Panels @ AC/Rect: 1 TABLE t SYSTEM ARCHITECTURE TABLE 3: AC INPUT AND RECTIFIER SHELF OPTIONS IN A 6 OR 7 FOOT HIGH CABINET OOOSE OM.Y 0 £ choose only one H569-434 AC INPUT AND RECTIFIER SHELF OPTIONS 7 IN A 7 FOOT HIGH CABINET


    OCR Scan     		208/240V h569-434 65kic) KS24I94 GPS4848/I00 Cutler-Hammer NH3 GL-GG TYCO 596A RECTIFIER LS CIRCUIT BREAKERS KS-20472 THHN 6 str green kic 125 hot air gun fan controller circuit G488 N 847568920 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    IN2071

    Abstract: 1N5171 1N2070 CER68 3c400 3001C 1N2069 1N4089 CER67 CER69
    Text: N IC R O S E H I CORP/ R p n 1 4 E D | t llt D M D GQDOOlfl T | o; Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 CER73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200


    OCR Scan     		tllb040 CER67 CER68 CER69 1N2069 CER70 1N2070 CER500 N2071 CER72 IN2071 1N5171 CER68 3c400 3001C 1N4089 CER67 PDF