CMRT
Abstract: 2SJ179
Text: MOS M O S Field E ffe c t T ran sis to r 2SJ179 MOS F E T 2SJ179 ü , P f - -v * M O S F E T T", 5 V i t » . IC ^ - i i ! m m b f ë j f c W h & n i f f e & x j -y - f > r • r > <yf x T 'T o * > Î J ( ^ — 9 , S W O fJiT Ì- > Î Æ S ì l W < , 4
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2SJ179
Ta-25
CMRT
2SJ179
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6209A
Abstract: TC-6209A 2SA1611 04 NG 537
Text: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È
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2SA1611
02SC4177
iEI-620)
SC-70
6209A
TC-6209A
2SA1611
04 NG 537
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2SB821
Abstract: 2SB1276
Text: Z $ / T ransistors K "7 > V 2SB821 2SB 1276 2SB821 /2SB 1276 x t : $ * ÿ 7 J l ' 7 ° l s - i - B P N P ' j 3 > fit rbb' f é ^ f f ^ ' l i f f l / L o w rbb' Low Noise Am p. Epitaxial Planar PN P Silicon Transistors • # 1 f l f i S * T * * y S SI / Di men si o ns Unit : mm)
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2SB821
39V110A
03HH3J3H
3S10M
2SB1276
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jd 1801
Abstract: 3H103 Z68C d3s9
Text: 9NIMVHQ 00 I Jo I ; I I A3 a O N I M V U d 31V 3S 133HS o i ON £>N I wvdd y 1S3a 3CIOO 3 9 VO H S IN I 3 1H9I3M S319NV Did fr 03d S NO I I V O I I d dV 3Z I £ 1026 1-801 33dS N O I S d 3 A H S i l U d 3 Q V 3 H Q d V O aAdv !M 'd d IA IV !M 'd ÇIJJÔ
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133HS
S319NV
SS31NI1
0NVH31O1
SaNVld3H13N
H0S09N3901d3H-s.
QNV1d303N
S31NOdlD313
1S31d
19V1N09
jd 1801
3H103
Z68C
d3s9
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SU536
Abstract: NE536 NE536T SU536T n110k
Text: 536 F E T Input Operational Am plifier FEATURES DESCRIPTION • • • • • • • The 536 is a special purpose high performance opera tional amplifier utilizing a FET input stage for extremely high input impedance and low input current. The device features internal compensation, standard pin
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100pF_
SU536
NE536
NE536T
SU536T
n110k
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ECG709
Abstract: 1j45 "product detector" fm modulation and demodulation Transistors LV4 tkd12
Text: bbSBTHô G003S73 1 • _ ECG709 FM DETECTOR AND LIMITER PHILIPS DESCRIPTION The Type ECG 709 FM Defector and Lim iter is a lin ear monolithic integrated c irc u it designed for use with nominal 8 volt supplies in portable or vehicular operation. The device consists of a three-stage lim iter
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G003S73
ECG709
-T-77-0S-07
ECG709
70mVBUJ
G0Q327h
1j45
"product detector"
fm modulation and demodulation
Transistors LV4
tkd12
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Untitled
Abstract: No abstract text available
Text: BA1701 BA1701 VSC* ^ T A ^ P V S C * S y s te m t - y t l C P ro c e s s o r • BA1701 IC /Dimensions Unit : mm VSC*5fc(C i ¿ L T 1 S L f c i / U > -v ? ICT-To a-'1*71 1~2.5i§c7)f&HT\ £%§.•£■&&~£l,z ttfT'B i t « The BA1707 is a monolithic IC developed to control
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BA1701
BA1701
BA1707
39V110A
30N3M333y
39VnO
33N3H3J3U
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LM119
Abstract: No abstract text available
Text: SGS-THOMSON *7 M , H D ilLiOTMOlg® LM119 - LM219 LM319 HIGH SPEED DUAL COMPARATORS . . . . . TWO INDEPENDENT COMPARATORS OPERATES FROM A SINGLE+5V SUPPLY TYPICALLY80ns RESPONSE TIME AT ±15V MINIMUM FAN-OUT OF 2 EACH SIDE MAXIMUM INPUT CURRENT OF 1jjA OVER
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LM119
LM219
LM319
TYPICALLY80ns
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Untitled
Abstract: No abstract text available
Text: 000-00-I £ £ - I 0 - D M 2 W I S S - 0 8 M =d3QMDN 9NIMVaO 1HS A19W3SSV 31VW 11VI Dd A9010NHD31 03X IH 31VWViVa M3H D S O V r =31111 £u«i =v3av/s =HS1N1J 3AO0V 33S 3AO0V 33S :iVld31VN G31V1S SS31NI1 oST : S339NV muilO OT : XXX' X XX' X uiuiOl 'O T u iu u s e 'O T
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000-00-I
A19W3SSV
A9010NHD31
31VWViVa
iVld31VN
G31V1S
SS31NI1
S339NV
1N30IJN03
N03N3H
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A09C
Abstract: No abstract text available
Text: : V3MV/S a ooo-oo-ice-io-ewe^ciss-o8 h A1 9 H3 SSV 3 1 VW 1 1Vi Dd ÀDOIONHOBI 0 3 XIW 31 VWV1 VG MBHDSMDVr =31111 :9M ujujiooT XXX'X XXX XX X uiuio| OT «wiSZ'OT UIUJI=1= 3A09V 33S :iVld31VW S3DNVU 3101 0 ! SV NIMUVH 065* S*S* »PI l£26 £20 : XVJ I £¿6 £20 ; 1 31
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S319NV
A19W3SSV
3A09V
iVld31VW
H3H10
N0383H
39V110A
19V1N
A09C
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2SC2787
Abstract: T460-8525 TN 0776 nec 8525 LT1M
Text: ? — S 7 • S /— h S ilic o n T ra n s is to r 2SC2787 N PN X J r i s T J i ' M i ' ' -1 > b ^ F M / A M 7 ì> * # R F , M IX ., C O N V ., O S C ., IF / B ft # { 2 ; : rnm ) o F M / A M ÿ x ^ - iO R F , W 3 ^ # i i M * Ê * t « * 5 Ë t è ' 5 (T a =
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75327C
Abstract: SN7401 transistor bf 175 75S208 26S10M SN75129 SN75107 SN55109A
Text: m - The Line Driver and Line Receiver Data Book for Design Engineers 1977 T exas In s t r u m e n t s INCORPORATED LC C 4290 741 0 5 - 2 7 - E C P rin te d in U .S .A . IM PO R TA N T NOTICES Texas Instruments reserves the right to make changes at any time in
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CC-415.
S-104
75327C
SN7401
transistor bf 175
75S208
26S10M
SN75129
SN75107
SN55109A
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