radome material abs
Abstract: 2400-2500MHz
Text: SPECIFICATION Part No. : Product Name Dimensions FG.PANEL.03 : : 2400-2500MHz Panel antenna 390*390mm REVISION STATUS Version Date Page Revision Description Prepared Approved 01 Jan 02nd 2006 All New Product TW Product Centre Ronan Quinlan All Rights Reserved
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2400-2500MHz
390mm
-15dB
2000g
120mph
radome material abs
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Untitled
Abstract: No abstract text available
Text: Type 15C, 10U - 19” Rackmount/Desktop, Vertical featureS: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 19” Rackmount fully compliant to IEEE 1101.10/.11 10U x 84HP x 390mm H x W x D 8, 16 or 20 slot PICMG: 2.0, 2.16, 2.17, EXP.0 backplanes (H.110 optional)
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390mm
48VDC)
110/220VAC
230VAC
48VDC
90-230VAC
28VDC
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Untitled
Abstract: No abstract text available
Text: 2.4G DIPOLE 9DBI ANTENNA FOR SMA MALE REVERSE POLARITY Part Number: LM254 Type: Frequency: Gain: Polarization: SWR: Impedance: Base Connector: Weight: Size: Dipole 2400~2500MHz 9Dbi Linear Vertical ≦1.5：1 50 Ω SMA Male Reverse Polarity 60g H 390mm x W 13.7mm × D 13.7mm
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LM254
2500MHz
390mm
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Untitled
Abstract: No abstract text available
Text: 2.4G DIPOLE 9DBI ANTENNA FOR SMA MALE REVERSE POLARITY Part Number: LM254 Type: Frequency: Gain: P SWR: Impedance: Base Connector: Weight: Size: Dipole 2400~2500MHz 9Dbi L V 1.5：1 SMA Male Reverse Polarity 60g H 390mm x W 13.7mm × D 13.7mm Contact LM Technologies Ltd
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LM254
2500MHz
390mm
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CBVK741B019
Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide
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FDS6814
CBVK741B019
F63TNR
F852
FDS6814
FDS9953A
L86Z
AA MARKING CODE SO8
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Untitled
Abstract: No abstract text available
Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.
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FDS3690
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Abstract: No abstract text available
Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4936DY
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Untitled
Abstract: No abstract text available
Text: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDS9435A
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Untitled
Abstract: No abstract text available
Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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Untitled
Abstract: No abstract text available
Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W
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FDC5612
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Untitled
Abstract: No abstract text available
Text: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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FDG6301N
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18L3
Abstract: JEDEC DO-214AC A140 F63TNR F924 FMKA140 T0012 SAFETY barrier 2896
Text: FMKA140 FMKA140 Features • Compact surface mount with J-bend leads SMA • 1.2 Watt Power Dissipation package • 1.0 Ampere, forward voltage less than 600 mV SMA (D0-214AC) Color Band Denotes Cathode Top Mark: A140 1.0 Schottky Power Rectifier Absolute Maximum Ratings*
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FMKA140
D0-214AC)
18L3
JEDEC DO-214AC
A140
F63TNR
F924
FMKA140
T0012
SAFETY barrier 2896
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5r6 inductor
Abstract: HWI453232 HWI453232-1R0 HWI453232-1R2 HWI453232-1R5 HWI453232-1R8 HWI453232-2R2 HWI453232-2R7 HWI453232-3R3 HWI453232-3R9
Text: MOLDED WIREWOUND CHIP INDUCTORS HWI453232 SERIES 1. PART NO. EXPRESSION : HW I 4 5 3 2 3 2 - 1 R 0 K F a (b) (c) (d)(e) (a) Series code (d) Tolerance code : K = ±10%, M = ±20% (b) Dimension code (e) F : Lead Free (c) Inductance code : 1R0 = 1.00uH 2. CONFIGURATION & DIMENSIONS :
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HWI453232
5r6 inductor
HWI453232-1R0
HWI453232-1R2
HWI453232-1R5
HWI453232-1R8
HWI453232-2R2
HWI453232-2R7
HWI453232-3R3
HWI453232-3R9
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7643G
Abstract: 384M 7643J
Text: Features • ■ ■ ■ ■ Applications 10 position selector switch Miniature industrial switch Vertical adjust Rugged surface mount design Break-before make timing Test equipment Instrumentation ■ Computer hardware ■ ■ 7643 SMD 7mm Square Sealed Selector Switch
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100mA
384MM.
390MM.
7643G
384M
7643J
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7w66
Abstract: Si4435DY D665
Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4435DY
7w66
D665
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M68HC705KICS
Abstract: 68HC705P3 68hc705j2 lifeboat 68HC05e6 68HC705j2 programming BERG CONNECTOR HC05 HC08 M68HC705E6PGMR* dip 28
Text: SG173/D REV. 10 Modular Development Tools QUARTER 4,1996 MMEVS ENHANCES MOTOROLA MODULAR TOOL OFFERINGS! Motorola now offers two fully modular development system choices: the new Motorola Modular Evaluation System MMEVS and our popular, high-performance Motorola Modular Development System (MMDS). You can now build
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SG173/D
M68MMPFB0508
M68MMDS05)
HC05/08
M68HC705KICS
68HC705P3
68hc705j2
lifeboat
68HC05e6
68HC705j2 programming
BERG CONNECTOR
HC05
HC08
M68HC705E6PGMR* dip 28
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d7566
Abstract: No abstract text available
Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
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FDS6675
OT-23
d7566
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Single P-Channel, Logic Level, PowerTrench MOSFET
Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.
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FDR8308P
Single P-Channel, Logic Level, PowerTrench MOSFET
P-Channel Logic Level PowerTrenchTM MOSFET
F63TNR
F852
FDR8308P
SOIC-16
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ON B34
Abstract: b34 diode FAIRCHILD MBRS340 diode b34 diode schottky B34 b34. device data on semiconductor DO-214AB SS32-S310 MBRS340 diode 019 b34
Text: SS32-S310 SS32 - S310 Features • Metal to silicon rectifiers, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. • High surge current capability. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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SS32-S310
SMC/DO-214AB
ON B34
b34 diode
FAIRCHILD MBRS340
diode b34
diode schottky B34
b34. device data on semiconductor
DO-214AB
SS32-S310
MBRS340
diode 019 b34
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ILSB-0603
Abstract: No abstract text available
Text: ILSB-0603 Vishay Dale Monolithic Chip Inductors FEATURES • High reliability. • Surface mountable. • Magnetically self shielded. • Nickel barrier plating virtually eliminates silver migration. MECHANICAL SPECIFICATIONS ENVIRONMENTAL SPECIFICATIONS Solderability: 90% coverage after 5 second dip in 235°C
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ILSB-0603
hour039
160mm
390mm
28-Aug-02
ILSB-0603
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fdn359an
Abstract: SOIC-16 SSOT-23 SSOT-3 SuperSOTTM -3
Text: April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain
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FDN359AN
OT-23
OT-23
fdn359an
SOIC-16
SSOT-23
SSOT-3
SuperSOTTM -3
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CBVK741B019
Abstract: F63TNR FDC6323L FDC633N SOIC-16 FDC633 20K-OHM
Text: March 1999 FDC6323L Integrated Load Switch General Description Features VDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8V VDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V. These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS
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FDC6323L
OT-23
CBVK741B019
F63TNR
FDC6323L
FDC633N
SOIC-16
FDC633
20K-OHM
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V52100
Abstract: No abstract text available
Text: Agilent HDSM-425G 0.4 " Dual Digit Green Surface Mount Seven Segment Display Data Sheet Description This surface-mountable seven segment display is designed with a multiplexable circuit meant for assembly using conductive epoxy curing. The lightweight, low
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HDSM-425G
5988-8682EN
V52100
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