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    84-1LMI

    Abstract: P1005 XB1005 XP1005 XU1001
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1005 05-May-05 MIL-STD-883 84-1LMI P1005 XB1005 XP1005 XU1001

    Untitled

    Abstract: No abstract text available
    Text: XP1005-BD Power Amplifier 35.0-43.0 GHz Rev. V2 Features Chip Device Layout •     Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power


    Original     		PDF XP1005-BD Mil-Std-883

    XB1005-BD

    Abstract: DM6030HK P1005-BD TS3332LD XP1005 XP1005-BD XU1001-BD
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1005-BD 10-Aug-07 MIL-STD-883 XP1005-BD-000V XP1005-BD-EV1 XP1005 XB1005-BD DM6030HK P1005-BD TS3332LD XP1005-BD XU1001-BD

    38H4PBA0157

    Abstract: R143 335E-08
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-May-05 P1005 MIL-STD-883 38H4PBA0157 R143 335E-08

    P1005-BD

    Abstract: DM6030HK TS3332LD XB1005-BD XP1005 XP1005-BD XP1005-BD-000V XU1001-BD
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD October 2008 - Rev 05-Oct-08 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1005-BD 05-Oct-08 Mil-Std-883 XP1005-BD-000V XP1005-BD-EV1 XP1005 P1005-BD DM6030HK TS3332LD XB1005-BD XP1005-BD XP1005-BD-000V XU1001-BD

    38MPA0547

    Abstract: No abstract text available
    Text: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 04-Aug-05 38MPA0547 MIL-STD-883

    XP1005

    Abstract: XP1005-BD XP1005-BD-000V XP1005-BD-EV1
    Text: XP1005-BD Power Amplifier 35.0-43.0 GHz Rev. V2 Features Chip Device Layout •     Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power


    Original     		PDF XP1005-BD Mil-Std-883 XP1005 XP1005-BD XP1005-BD-000V XP1005-BD-EV1

    Untitled

    Abstract: No abstract text available
    Text: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 May 2005 - Rev 20-May-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 38MPA0547 20-May-05 MIL-STD-883