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    ADLINK Technology Inc Xeon E3-1275 v6 3.8GHz LGA1151

    CPU - Central Processing Units CPU, Xeon E3-1275V6, 3.80GHz, 4-Core, 8MB SmartCache, Kaby Lake, CM8067702870931 SR32A, Step:B0, MM# 952791
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    Mouser Electronics Xeon E3-1275 v6 3.8GHz LGA1151
    • 1 $544.99
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    Abracon Corporation APKD1507G2-0100S

    Antennas GPS/GLONASS ACTIVE PATCH ANT SMD IPEX-1(F)
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    TTI APKD1507G2-0100S Tray 2,000 400
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    TE Connectivity 1052-1300-02

    RF Connectors / Coaxial Connectors 1052-1300-02
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    TTI 1052-1300-02 Each 48 1
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    Kyocera AVX Components BP0EA2423A700

    Signal Conditioning 2423 MHZ
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    TTI BP0EA2423A700 WAFL 24 24
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    TE Connectivity 1007-7985-00

    RF Connectors / Coaxial Connectors 1007 7985 00
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    TTI 1007-7985-00 Each 25 1
    • 1 $127.35
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    38GHZ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical


    Original     		PDF TGA1171-EPU 38GHz 36dBm 40GHz TGA1171 500mA, TGA1171-EPU 0007-inch

    TGA1073C

    Abstract: TGA1073C-SCC
    Text: Product Datasheet August 15, 2000 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm


    Original     		PDF TGA1073C-SCC 38GHz TGA1073C 0007-inch TGA1073C-SCC

    DH1502

    Abstract: No abstract text available
    Text: OCTOBER 1993 DH1502 DS3911-1.1 DH1502 26 to 38GHz DROP-IN BALANCED MIXER The DH1502 is a drop-in balanced mixer covering the 26 38GHz frequency band. Thin film quartz circuits are used to accomplish both high performance and to ensure suitability for the harsh military environments. The unit employs a novel


    Original     		PDF DH1502 DS3911-1 38GHz DH1502 44GHz. 44GHz) 18GHz

    filtronic Solid State

    Abstract: No abstract text available
    Text: 38GHz Medium Power Amplifier Filtronic LMA444 Solid State PRELIMINARY Data Sheet Typical Specifications • • • • • • • • +21dBm Output Power @ 1dB Gain Com pression 15dB Typical Gain 10dB Input/Output Return Loss +5Volts Dual Bias Supply DC Decoupled RF Input and Output


    Original     		PDF 38GHz LMA444 21dBm 95mmX2mm 100X100 LMA444 40GHz. 21dBm filtronic Solid State

    TGA4522

    Abstract: No abstract text available
    Text: TGA4522 33 – 47 GHz Wide Band Driver Amplifier Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz 15 dB Nominal Return Loss @ 38GHz


    Original     		PDF TGA4522 38GHz TGA4522

    TGA4522-EPU

    Abstract: No abstract text available
    Text: Advance Product Information October 5, 2004 33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 32 dBm OTOI @ 16dBm/Tone 14 dB Nominal Gain @ 38GHz


    Original     		PDF TGA4522-EPU 38GHz 16dBm/Tone TGA4522-EPU

    Untitled

    Abstract: No abstract text available
    Text: CHV2240 RoHS COMPLIANT Multifunction K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description +V The CHV2240 is a monolithic multifunction proposed for frequency generation at 38GHz. It integrates a K-band Voltage Controlled Oscillator, a Q-band frequency


    Original     		PDF CHV2240 CHV2240 38GHz. DSCHV22409336

    Untitled

    Abstract: No abstract text available
    Text: 38GHz Waveguide Diplexer K&L Microwave offers 38GHz waveguide diplex filters at commercial prices and the fastest delivery available. Innovative design and manufacturing techniques allow K&L to maintain the highest standards of quality and performance, while


    Original     		PDF 38GHz 37018-37658MHz 38278-38918MHz 34318-34958MHz 35668-36308MHz 35578-36218MHz 36928-37568MHz

    TGA4522

    Abstract: No abstract text available
    Text: Advance Product Information September 21, 2005 33 - 47 GHz Wide Band Driver Amplifier TGA4522 Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz


    Original     		PDF TGA4522 38GHz TGA4522

    Untitled

    Abstract: No abstract text available
    Text: Product Datasheet January 16,2001 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm


    Original     		PDF TGA1073C-SCC 38GHz TGA1073C-SCC TGA1073C 0007-inch

    CHV2240

    Abstract: dielectric resonator design dielectric resonator oscillator lerc
    Text: CHV2240 RoHS COMPLIANT Multifunction K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description +V The CHV2240 is a monolithic multifunction proposed for frequency generation at 38GHz. It integrates a K-band Voltage Controlled Oscillator, a Q-band frequency


    Original     		PDF CHV2240 CHV2240 38GHz. DSCHV22409336 dielectric resonator design dielectric resonator oscillator lerc

    TGA1073C

    Abstract: TGA1073C-EPU BV36
    Text: Advance Product Information 36 to 41 GHz Power Amplifier TGA1073C-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 36-41 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm


    Original     		PDF TGA1073C-EPU 38GHz TGA1073C 0007-inch TGA1073C-EPU BV36

    transistor 2xw

    Abstract: 38GHz T485B S11 INFINEON power transistor gaas
    Text: T485B_MPA_2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P-1dB > 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm


    Original     		PDF 38GHz QS9000 ISO9001 transistor 2xw T485B S11 INFINEON power transistor gaas

    2863

    Abstract: TGA1171 TGA1171-EPU
    Text: Advance Product Information June 14, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical


    Original     		PDF TGA1171-EPU 38GHz 36dBm 40GHz TGA1171-EPU TGA1171 0007-inch 2863

    Untitled

    Abstract: No abstract text available
    Text: TGA4522 33 – 47 GHz Wide Band Driver Amplifier Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz 15 dB Nominal Return Loss @ 38GHz


    Original     		PDF TGA4522 38GHz TGA4522

    Wireless Integrated Circuits

    Abstract: CHV2243 PH25 United Monolithic Semiconductors
    Text: PRESS RELEASE New Products Announcement Date : 04/05/2001 Author : Marketing group United Monolithic Semiconductors releases a new integrated 38GHz Voltage Controlled Oscillator To Business editors/High tech Writers th ORSAY , May 04 , 2001 Team Focus : Standard Products


    Original     		PDF 38GHz CHV2243 D-89081 Wireless Integrated Circuits PH25 United Monolithic Semiconductors

    TGA4036

    Abstract: No abstract text available
    Text: Advance Product Information December 9, 2004 19 - 38GHz Medium Power Amplifier TGA4036 Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA 210mA @ P1dB 0.25 um 3MI pHEMT Technology


    Original     		PDF 38GHz TGA4036 210mA TGA4036

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS OCTOBER 1993 DH1502 DS3911-1.1 DH1502 26 to 38GHz DROP-IN BALANCED MIXER The DH1502 is a drop-in balanced mixer covering the 26 38GHz frequency band. Thin film quartz circuits are used to


    Original     		PDF DH1502 DS3911-1 38GHz DH1502 44GHz. 18GHz

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information January 17, 2005 33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 35 dBm OTOI @ Pin = 18 dBm/Tone 14 dB Nominal Gain @ 38GHz


    Original     		PDF TGA4522-EPU 38GHz TGA4522-EPU

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF 28dBm JS9P05-AS 38GHz

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •H IG H POWER P1dB= 26. OdBm ■C H IP FORM IH IG H GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point


    OCR Scan     		PDF 38GHz JS9P04-AS

    bonder

    Abstract: JS9P05-AS
    Text: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm @ f = 38GHz ■C H IP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS C H A R A C TE R IS TIC S SYMBOL Output Power at 1dB


    OCR Scan     		PDF JS9P05-AS 28dBm 38GHz 38GHz bonder JS9P05-AS

    Untitled

    Abstract: No abstract text available
    Text: T485BMPA2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P.1dB> 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm


    OCR Scan     		PDF T485BMPA2 38GHz

    JS9P05-AS

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •HIG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF JS9P05-AS 28dBm 38GHz JS9P05-AS