TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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Untitled
Abstract: No abstract text available
Text: CS223-4M CS223-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control
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CS223-4M
CS223-4N
OT-223
30-November
CS223-4N
610-CS223-4M
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APT54GA60B
Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT54GA60BD30
APT54GA60SD30
APT54GA60B
APT54GA60BD30
APT54GA60SD30
MIC4452
SD30
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APT36GA60B
Abstract: APT36GA60S MIC4452 c 1853
Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT36GA60B
APT36GA60S
APT36GA60B
APT36GA60S
MIC4452
c 1853
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S6065K
Abstract: JESD22-A101 JESD22-A102 TO-218x Sxx65J
Text: Teccor brand Thyristors 65 / 70 Amp Standard SCRs Sxx65x & Sxx70x Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential.
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Sxx65x
Sxx70x
E71639
O-218AC
O-218X
S6065K
S6065K
JESD22-A101
JESD22-A102
TO-218x
Sxx65J
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quadrac
Abstract: triac and diac TO-220L quadracs diac 400V 10A alternistor "application note" 400v 15A triac teccor triac application notes JESD22-A101 JESD22-A102
Text: Teccor brand Thyristors 4 / 6 / 8 / 10 / 15 Amp Quadracs QxxxxLTx Series The Quadrac is an internally triggered Triac designed for AC switching and phase control applications. It is a Triac and DIAC in a single package, which saves user expense by eliminating the need for separate Triac and DIAC
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E71639
Qxx15LTH
Qxx15LTHTP
O-220AB
Q6010LTH
O-220
quadrac
triac and diac
TO-220L
quadracs
diac 400V 10A
alternistor "application note"
400v 15A triac
teccor triac application notes
JESD22-A101
JESD22-A102
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APT28GA60BD15
Abstract: APT6017LLL MIC4452
Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60BD15
APT6017LLL
MIC4452
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APT28GA60K
Abstract: MIC4452
Text: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60K
O-220
shift26)
APT28GA60K
MIC4452
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teccor triac application notes
Abstract: alternistor triac 263 d alternistor "application note" TRIAC 226 b triac 101 amps 400v 15A triac triac 216 12 amp triac heat control TRIAC 226 a
Text: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series Description Standard type devices normally operate in Quadrants I & III triggered from AC line. Alternistor type devices only operate in quadrants I, II, & III
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Qxx15xx
Qxx16xHx
E71639
2500Vrms
O-220AB
O-263AA
Q6016LH4
O-220
O-263
teccor triac application notes
alternistor
triac 263 d
alternistor "application note"
TRIAC 226 b
triac 101 amps
400v 15A triac
triac 216
12 amp triac heat control
TRIAC 226 a
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SD15
Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT
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APT36GA60BD15
APT36GA60SD15
SD15
APT36GA60B
APT36GA60BD15
APT36GA60SD15
MIC4452
400v 20A ultra fast recovery diode
J750
1800g
TF328
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APT68GA60B
Abstract: APT68GA60S MIC4452
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT68GA60B
APT68GA60S
APT68GA60B
APT68GA60S
MIC4452
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APT10035LLL
Abstract: APT46GA90JD40 MIC4452 max4170
Text: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT46GA90JD40
E145592
APT10035LLL
APT46GA90JD40
MIC4452
max4170
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transistor 206
Abstract: 2sb857
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-A-K 2SB857L-x-T6C-A-K
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2SB857
2SB857L
2SB857-x-T6C-A-K
2SB857L-x-T6C-A-K
2SB857-x-TN3-F-R
2SB857L-x-TN3-F-R
2SB857-x-TN3-F-T
2SB857L-x-TN3-F-T
O-126C
O-252
transistor 206
2sb857
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Untitled
Abstract: No abstract text available
Text: 2SD882 PNP Type Elektronische Bauelemente Epitaxl Planar Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 D E Description A S1 The 2SD882 is suited for the output stage of 0.75W audio, voltage requlator, and relay driver.
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2SD882
2SD882
100MHz
01-Jun-2002
380us,
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FREDFET
Abstract: No abstract text available
Text: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT4F120S
195nS
FREDFET
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Untitled
Abstract: No abstract text available
Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 95V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Ultra Low VCE(SAT) 0.5V @ IC / IB = 3.5A / 40mA Excellent DC current gain characteristics
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TSD2098A
OT-89
TSD2098ACY
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Untitled
Abstract: No abstract text available
Text: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)
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WPM2015
OT-23
WPM2015
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APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
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GMBT1015
Abstract: BT101
Text: 1/2 GM BT1015 P NP E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Package Dimensions SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60
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BT1015
GMBT1015
OT-23
BT101
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GMPSA27
Abstract: No abstract text available
Text: CORPORATION G M P S A2 7 ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B NPN SILICO N DARLING TON TRANSISTO R Description The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA. Package Dimensions
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2004/11/29B
GMPSA27
500mA.
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G2N4401
Abstract: G2N4403
Text: CORPORATION G2N4401 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N4401 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4403 *High Power Dissipation: 625mW at 25
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G2N4401
2004/11/29B
G2N4401
G2N4403
625mW
150mA
G2N4403
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teccor triac application notes
Abstract: Q6016RH4 TRIAC 226 b triac 263 d triac 216 400v 16A triac alternistor "application note" JESD22-A101 triac symbol TO-220L
Text: Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor High Commutation Triacs Qxx15xx & Qxx16xHx Series ® Description 15 Amp and 16 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
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Qxx15xx
Qxx16xHx
O-220
O-263
Q6016RH4
Q6016LH4
teccor triac application notes
Q6016RH4
TRIAC 226 b
triac 263 d
triac 216
400v 16A triac
alternistor "application note"
JESD22-A101
triac symbol
TO-220L
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GL965
Abstract: GL96
Text: ISSUED DATE :2004/04/25 REVISED DATE :2004/12/08B GL965 NP N E PITAX I AL PLANAR T RANSI STOR Description The GL965 is designed for use as AF output amplifier and flash unit. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10
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2004/12/08B
GL965
GL965
OT-223
GL96
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GMA06
Abstract: No abstract text available
Text: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J
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GMA06
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