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    BTB08600

    Abstract: ES310
    Text: BTA08 TW/SW BTB08 TW/SW / T T SCS-THOMSON H D g ^ ( S [lL [l T ^ © R ! lD (g i LOGIC LEVEL TRIACS FEATURES • LOW Ig t = 5mA max ■ LOW Ih = 15mA max ■ HIGH EFFICIENCY SWITCHING ■ BTA Fam ily: INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)


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    BTA08 BTB08 E81734) BTA/BTB08 BTB08600 ES310 PDF

    p0201

    Abstract: p0201x scr Igt 1mA
    Text: r Z Z S G S -T H O M S O N ^ 7 # MOIM&lCTIfliiSBCi P0201xA P0202xA SENSITIVE GATE SCR FEATURES = 0.8A • VDrm = 500V to 800V ■ Low Ig t ^ 20 nA maxto < 200 ^A ■ I t RMS DESCRIPTION The P020xxA series of SCRs uses a high performance planar PNPN technology. These


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    P0201xA P0202xA P020xxA 7T2T237 0700bS p0201 p0201x scr Igt 1mA PDF

    10MSA

    Abstract: D-12VDC
    Text: X04xxxF SENSITIVE GATE SCR FEATURES • It rm s = 4A ■ V d rm = 400V to 800V ■ Low I g t < 200jiA DESCRIPTION The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended tor general purpose applications where low gate sensitivity is required,


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    X04xxxF 200jiA X04xxxF 10MSA D-12VDC PDF

    BFC10

    Abstract: No abstract text available
    Text: im W : mi SEME BFC10 LAB 4TH GENERATION MOSFET S O T-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS - _ 31 5 (1-240) H 31 7 (1.248) 7 8 (0 307) I ^62(0322^_ / Hex Nul M 4 (4 places) i


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    BFC10 OT-227 MIL-STD-750 0G01S22 BFC10 PDF

    TS120-600F

    Abstract: TS120 TS120-400F TS120-800F TS120F
    Text: ^ 7 SGS-THOMSON TS1 2 0 F SENSITIVE GATE SCR FEATURES • It RMS = 1 A ■ V drm = 400 V / 600 V / 800 V ■ Ig t < 2 0 0 H.A DESCRIPTION The TS120F high voltage series of Silicon Con­ trolled Rectifiers use a high performance planar diffused PNPN, glass passivated sensitive gate


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    TS120F TS120F TS120 TS120-600F TS120-400F TS120-800F PDF

    Untitled

    Abstract: No abstract text available
    Text: rrz SGS-THOMSON T0610XH T0612xH Ä 7# 0MflDIBI3®ilLiCTI3®Rlll Bl STANDARD TRIACS FEATURES • It(RMS = 6A > VDrm = 400V to 800V ■ High surge current capability DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These


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    T0610XH T0612xH T06xxxH T0220 7TST237 PDF

    p0201

    Abstract: P0201MN P0202MN P2M SCR P0202EN P0202NN 0019J P0201EN P0201SN P0202SN
    Text: G ì. SG S-TH O M SO N P0201XN P0202xN ¡u SENSITIVE GATE SCR FEATURES • It rm s = 0 .8 A ■ V drm = 500V to 800V ■ Low Ig t ^ 20 joA max to < 200 jiA DESCRIPTION The P0201xN series of S C R s uses a high performance planar PNPN technology. These parts are intended for general purpose high


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    P0201xN P0202xN P0201xN 1995SGS-THOMSON 7T2T237 p0201 P0201MN P0202MN P2M SCR P0202EN P0202NN 0019J P0201EN P0201SN P0202SN PDF

    hc 284

    Abstract: SM 71A diode BFC18 ls 3120
    Text: Illl Illl BFC18 SEME LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 11 6 (0 4 6 3 ) 12 2 ( 0 48 01 I 9 (0 3 5 0 } 9 6 (0 3 7 6 ! Hex N ut M 4 (4 placas) F- i i Y i i % o ^ 0 7 5 10.0305


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    BFC18 OT-227 380jiS MIL-STD-750 0001S3Ã hc 284 SM 71A diode ls 3120 PDF

    marking R1E

    Abstract: SCR PNPN T092
    Text: r = 7 SG S-TH O M SO N ^ 71 KtusMitLneinssoiffliiei P 0 1 x x x A /B SENSITIVE GATE SCR FEATURES = 0.8A = 100V to 400V • Low Ig t < 1^A max to < 200 1A ■ It r m s ) - V drM DESCRIPTION The P01xxxA/B series of SCRs uses a high performance planar PNPN technology. These


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    P01xxxA/B D070Q5S marking R1E SCR PNPN T092 PDF

    FIR31

    Abstract: D-12VDC
    Text: r Z 7 SGS-THOMSON ^7# MDSIH llLICTl©lü!DSi ZOlXXXA SENSITIVE GATE TRIACS FEATURES • It r m s = 0.8A ■ V Drm = 400V to 800V ■ I q t £ 3mA to £ 25mA DESCRIPTION The ZOIxxxA series of triacs uses a high performance TO P GLASS PNPN technology.


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    PDF

    western digital FD1791

    Abstract: IBM-3740 FD1791 FD1793 western digital FD1793 MB8866 MB8876 fd1791-02 ibm3740 MB88XX
    Text: F U J IT S U MICROELECTRONICS SS D E | 3 7 4 ci7 t,2 0005470 s X ^ T -5 2 -3 3 -1 1 F U J IT S U MB8866 MB8876 MB8877 M IC R O E L E C T R O N IC S FLOPPY DISK FORMATTER/CONTROLLER FDC SEPTEMBER 1981 DESCRIPTION The Fujitsu MB88XX family is a one-chip Floppy


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    MB88XX IBM3740 System-34 western digital FD1791 IBM-3740 FD1791 FD1793 western digital FD1793 MB8866 MB8876 fd1791-02 PDF

    TS120-600F

    Abstract: SCR PNPN TS120 TS120-400F TS120-800F TS120F marking 3bs
    Text: ^ 7 SGS-THOMSON TS1 2 0 F SENSITIVE GATE SCR FEATURES • It RMS = 1 A ■ V drm = 400 V / 600 V / 800 V ■ Ig t < 2 0 0 H.A DESCRIPTION The TS120F high voltage series of Silicon Con­ trolled Rectifiers use a high performance planar diffused PNPN, glass passivated sensitive gate


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    TS120 TS120F 00ST402 7T2R237 TS120-600F SCR PNPN TS120-400F TS120-800F marking 3bs PDF

    Untitled

    Abstract: No abstract text available
    Text: rrz ^7# SG S-THO M SO N S0402xH RfflDOœiHitSiriHiOiDOS SENSITIVE GATE SCR FEATURES • It rm s = 4A ■ V drm = 200V to 800V ■ Low Igt < 200 jiA DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended tor general purpose


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    S0402xH S0402xH T0220 1995SGS-THOMSON PDF

    T12xx

    Abstract: No abstract text available
    Text: r = 7 SG S-TH O M SO N *•7# KaoeisKiiLiefMDaoGi T12xxxH STANDARD TRIACS FEATURES ■ It rms = 12A ■ V drm = 400V to 800V ■ High surge current capability DESCRIPTION T0220 non-insulated (Plastic) The T12xxxH series of triacs uses a high performance MESA GLASS technology. These


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    T12xxxH T12xxxH T0220 T12xx PDF