KMM374S1623BT-GL
Abstract: KMM374S1623BT-G8 KMM374S1623BT-GH
Text: Preliminary PC100 SDRAM MODULE 374S1623BT KM M 374S1623BT SDRAM DIMM 16M x72 SDRAM DIMM w ith ECC based on 8M x8, 4Banks, 4K Refresh, 3.3V S ynchronous D R AM s with SPD FEATURE G ENERAL DESCRIPTION T h e S a m s u n g K M M 3 7 4 S 1 6 2 3 B T is a 16M bit x 7 2 S y n c h ro n o u s
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KMM374S1623BT
KMM374S1623BT
PC100
KMM374S1623BT-GL
KMM374S1623BT-G8
KMM374S1623BT-GH
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Untitled
Abstract: No abstract text available
Text: PC66 SDRAM MODULE 374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.
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KMM374S1623BTL
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE 374S1623BT 374S1623BT SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 374S 1623BT is a 16M bit x 72 Synchronous • Perform ance range
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PC100
KMM374S1623BT
KMM374S1623BT
16Mx72
1623BT
374S1623BT-G
125MHz
374S1623BT-GH
100MHz
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374S1623BTL
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL 374S1623BTL SDRAM DIMM
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KMM374S1623BTL_
KMM374S1623BTL
KMM374S1623BTL
16Mx72
374S1623BTL
1623BTL
400mil
168-pin
48S8030BT
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KMM374S1623BTL
Abstract: KMM374S1623BTL-G0
Text: 374S1623BTL PC66 SDRAM MODULE 374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung 374S1623BTL is a 16M bit x 72 Synchro nous Dynamic RAM high density memory module. The Samsung
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KMM374S1623BTL
KMM374S1623BTL
16Mx72
400mil
168-pin
KMM374S1B23BTL
KMM374S1623BTL-G0
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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Untitled
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL_ Revision History Revision ,l November 1997 This spec has changed in accordance with New Binning - ELECTRONICS 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE 374S1623BTL 374S1623BTL SDRAM DIMM
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KMM374S1623BTL_
KMM374S1623BTL
KMM374S1623BTL
16Mx72
374S1623BTL
1623BTL
374S1623BTL-G
125MHz
400mQM
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE 374S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : + 5 u A to ± 1 u A , - Cin to be measured at V dd I il (DQ) : + 5 u A to ± 1.5uA. = 3.3V, T a = 23°C , f = 1 MHz, V
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KMM374S1623BT
PC100
150Max
KM48S8030BT
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