Untitled
Abstract: No abstract text available
Text: 550 mA HIGH VOLTAGE MICROWAVE OVEN RECTIFIERS Mechanical Dimelisions .285? 1 ,1.00 Mii^ - .866->| ^.050 _L t Features • HIGH OVERLOAD SURGE CAPABILITY ■ TYPICAL lB < IpA ■ COHTROLLED AVALANCHE CHARACTERISTICS ■ HIGH TEMPERATURE SOLDERING 250°C 10 Seconds
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21X21X5
48X22X36cm
21X9X8
51X25X30cm
47X22X27cm
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Untitled
Abstract: No abstract text available
Text: Data Sheet 2 .5 An*> FAST SW ITCHING MEGARECTIFIERS Semiconductor Mechanical Dimensions JE D E C D0-201 A D 1 r .1 9 0 1 .210 285 t . 3751 . 1.00 M in . r _L 1 t Features • HIGH TEMPERATURE METALLURGI C A L!^ BONDED CONSTRUCTION ■ 2JS AMP OPERATION T . = 55°C, WITH
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D0-201
RGP25A
RGP25A
RGP25B
RGP25D
RGP25J
RGP25K
RGP25M
1021X21X5
48X22X36cm
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Untitled
Abstract: No abstract text available
Text: HV03 Series Data Sheet 350 m A HIGH VOLTAGE MICROWAVE OVEN RECTIFIERS Mechanical Dimensions Description .1.00 Mlir .050 - . 866 - .2851 1 25 6,4 .172 DIA. Faston Terminal E— □ > 3 = ^ 3.51 Features • HIGH OVERLOAD SURGE CAPABILITY ■ TYPICAL l„ < 1fjA
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21X21X5
48X22X36cm
21X9X8
51X25X30cm
47X22X27cm
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor KBPC8 Series Preliminary Data Sheet 8.0 AMP Single Phase Silicon Bridge Mechanical Dimensions Description K B P C 8 Series Hole - 145D T .750 Min. .275 /- Features O O O O .020 Low Forward Voltage Drop 125 Amp Surge Overload Rating ^ UL Recognition Available
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Ferroxcube 1408P-L00-3C8
Abstract: TL494 ferroxcube 1408p
Text: TL494 Switchmode Pulse W idth Modulation Control Circuits Semiconductor T he T L 4 9 4 is a fix e d frequency, pulse w idth modulation control circuit designed prim arily fo r Sw itchm ode power supply control.This device features: • Com plete Pulse W id th M odulation Control Circuitry
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TL494
Ferroxcube 1408P-L00-3C8
ferroxcube 1408p
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor Preliminary Data Sheet TVS-1.5KE series Jan-94 Electrical Description Mechanical Dimensions MM 1.5KE Series □ • TVS ~~>J3evice (aL JEDEC DO-201 AD 1.00 Min. 4— .340 —>i-► T Load 1 1 I T-050 .200 Uni-Polar • TVS
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Jan-94
DO-201
T-050
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Untitled
Abstract: No abstract text available
Text: 3.0 Am p M EG ARECTIFIERS Data Sheet Features • HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION ■ 3.0 AMP OPERATION @ T = 55°C, WITH NO THERMAL RUNAWAY ■ SINTERED GLASS CAVITY-FREE JUNCTION ■ TYPICAL !„ < 0.1 pAmp Electrical Characteristics @ 2S*C.
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GP30A
GP30B
GP30D
GP30G
GP30J
GP30K
GP30M
21X21X5
48X22X36cm
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Untitled
Abstract: No abstract text available
Text: Data Sheet 20 Amp SCHOTTKY BARRIER RECTIFIERS 'emiconductor Mechanical Dimensions Description JEDEC T0-22QAB -fr— .too L- m . 1 4 0 v 4- ► .10 V =1 T~ + .39 .42 A-* .50 -»| m o + k- .225 K -*| Features • H IG H C U R R E N T C A P A B IL IT Y W IT H L O W V r
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T0-22QAB
FBR2030
FBR2045
51X25X30cm
21X21X5
47X22X27cm
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Untitled
Abstract: No abstract text available
Text: Data Sheet 25 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS Semiconductor Mechanical Dimensions Description SI m Features • LOW COST ■ LOW LEAKAGE CURRENT ■ HIGH TEMPERATURE CAPABILITY ■ MEETS UL SPECIFICATION 94V-0 ■ HIGH SURGE CAPABILITY ■ DIFFUSED JUNCTION
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FR2502
FR2S03
FR2504
PR25M
FR2510
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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IFR250
Abstract: FR2501 FR2503 FR2504 FR2510
Text: 25 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS Semiconductor Mechanical Dimensions Description O >• SI Features • LOW COST ■ LOW LEAKAGE CURRENT ■ HIGH SURGE CAPABILITY ■ HIGH TEMPERATURE CAPABILITY ■ DIFFUSED JUNCTION ■ MEETS UL SPECIFICATION 94V-0
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FR2500I
FR2500S
FR2501
FR2501
FR2503
FR2504
PR25M
FR2510
21X9X8
48X22X36cm
IFR250
FR2510
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor Preliminary Data Sheet FR601. 607 Series FAST RECOVERY 6.0 Amp PLASTIC RECTIFIERS_ _ Description Mechanical Dimensions FR601. 607 Series FR601. 607 Series R6 Case <— .350 —>4 ' t .275 I I » i T .050 Features O
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FR601.
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Untitled
Abstract: No abstract text available
Text: Data Sheet 50 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS semiconductor M echanical Dimensions Features • LOW COST ■ H IG H SURGE CAPABILITY ■ DIFFUSED JU N C TIO N ■ LOW LEAKAGE C U R RENT ■ H IG H TEMPERATURE C A PA B ILITY ■ MEETS U L SPECIFICATIO N 9 4V -0
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FR5001
FR50D2
PR5003
FR5004
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor Preliminary Data Sheet KBPC10.35XX Series 10 to 35 AMP Single Phase Silicon Bridges_ »» Description FC I Semiconductor •I 350 T o w n s Country Village. 3?n4fl2 00 00 2 7 6 SanJose, CA 95128 TEL 408 985 4571 4T3 ■
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KBPC10.
KBPC10
KBPC15
KBPC25
KBPC35
37n4AS
00002A1
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Untitled
Abstract: No abstract text available
Text: 2J0Amp SCHOTTKY D a ta Sheet BARRIER RECTIFIERS Semiconductor Mechanical Dimensions 1^ 4 .06/4 .60^ s 4E Cathode _ Package “SMB I3.30/3.90 h-s.io/5/58^ .11/.30 1 .65/2 .191- •! 1 .91/2.4 .01/. 20 1 .90/ 2.15 Featwes • EXTREMELY LOW V F ■ M AJORITY CARRIER CONDUCTION
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io/5/58^
SMB220
SMB230
SMB240
SMB250
SMB260
SMB2100
51X25X30cm
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Untitled
Abstract: No abstract text available
Text: TL431 Programmable Precision References Semiconductor p r o g r a m m a b l e p r e c i s i o n r e f e r e n c e s excellent replacements The TL431 integrated circuits are three-terminal for zener diodes in many programmable shunt regulator diodes. These monolithic
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TL431
28-LINER
29-SIMPLE
371T4A2
00D1327
30-HIGH
50mVp-p
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Untitled
Abstract: No abstract text available
Text: 5.0V to 170V GPP TRANSIENT VOLTAGE SUPPRESSORS Data Sheet TVS-SA5.0.170 Semiconductor Features • 5 0 0 W ATT P E A K PO W ER P R O T EC T IO N ■ T Y P IC A L I , < Ip A A B O V E 10V ■ E X C E L L E N T C LA M P IN G C A P A B IL IT Y ■ GLASS M SSIVATED CM P CONSTRUCTION
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51X25X30cm
21X21X5
47X22X27cm
KBPC10
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Untitled
Abstract: No abstract text available
Text: D ata Sheet 3.0 Am p MINIATURE PLASTIC SILICON RECTIFIERS miconductor Mechanical Dimensions Description m Features • LOW COST ■ DIFFUSED JUNCTION ■ LOW LEAKAGE ■ M EETS UL SPECIFICATION 94V-0 E lectrical C haracteristics @ 25*C. 1 N 5 4 0 0 . .5 4 0 8 S e rie s
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51X25X30cm
21X21X5
47X22X27cm
KBPC10
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Untitled
Abstract: No abstract text available
Text: 2SD882/2SD882S NPN Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • TO-126 Complement to 2SB772 ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 -c \ C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage
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2SD882/2SD882S
O-126
2SB772
171T4A2
14flS
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746 KBU
Abstract: No abstract text available
Text: pci 3 0 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions « - .900 -►] T0-3P 4r ^200 f .050 Typ Features • HIGH CURREHT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS
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FBR3030.
FBR3030
FBR3035
FBR3040
FBR3045
FBR3050
FBR3060
21X21X5
48X22X36cm
746 KBU
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ir 2s28
Abstract: FR2528
Text: FastOrb - 25 & 35 Amp D ata Sheet i Avalanche AUTOMOTIVE RECTIFIERS emiconductor Mechanical Dimensions Description Note: Ring Markings on Cathode FR2528 Options - Add Suffix to Part #: FR2528L = 2 Leads; FR3528L = 2 Leads J25_ For 1 Lead Small Pkg: FR2528SC = Lead On Cathode
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FR2528
FR2528L
FR3528L
FR2528SC
FR2528SA
MR2535
MR3525
51X25X30cm
ir 2s28
FR2528
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Untitled
Abstract: No abstract text available
Text: PCI LM386 Low Voltage Audio Power Amplifier Semiconductor T he inputs are ground referenced while th e output is he L M 386 is a pow er am plifier designed for use in T autom atically biased internally set to 2 0 to keep external p a rt count low, but voltage.The quiescent pow er drain is only 24 m illiw atts
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LM386
00012bb
00012b?
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Untitled
Abstract: No abstract text available
Text: 500 mW EPITAXIAL PLAN AR DIODES D ata Sh eet miconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 IN4448 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M axim u m R a tin g s
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DO-35
IN4448
51X25X30cm
21X21X5
47X22X27cm
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