3715 TRANSISTOR Search Results

3715 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

3715 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N3716 Abstract: 3715 transistor 2N3791 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 3715 2N 3716 Silicon NPN Pow er Transistors . . . designed for medium-speed switching and amplifier applications. These devices feature: ♦Motorola P rtfrre d D«vlc» Total Switching Time at 3 A typically 1.15 us	OCR Scan	2N3791 2N3715 2N3716 3715 transistor 2N3791 MOTOROLA	PDF
sd22 Abstract: 05Vmax Text: Ordering num ber: EN 3 7 1 5 2SB1509/2SD2282 No.3715 PNP/NPN Epitaxial Planar Silicon Transistors 50V/15A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage :VcE sat : —0.5Vmax.	OCR Scan	0V/15A 2SB1509 5111MH, 2SB1509/2SD2282 -200//S 100/is 0DW12 sd22 05Vmax	PDF
CB2203 Abstract: Leroy Somer MFA56 180v dc motor speed controller MFA80VL CB2103 MFA63S MFA71L MFA80L ac motor inductance Text: Issued March 1997 232-3715 Data Pack B Data Sheet dc industrial electrical motors and gearboxes A dc motor and motor/gearbox range of totally enclosed, 2 poles, permanent magnet type, designed for use with thyristor or transistor drive for variable speed application.	Original		PDF
2SB1509 Abstract: 2sd228 Text: Ordering number:EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1509/2SD2282] · Low collector-to-emitter saturation voltage :	Original	EN3715 2SB1509/2SD2282 2SB1509/2SD2282] 2SB1509 2SB1509 2sd228	PDF
3713 Abstract: No abstract text available Text: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po	OCR Scan	2N3713/14/15/16 2N3789/90/91/92 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 3713	PDF
Untitled Abstract: No abstract text available Text: Ordering number:ENN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1509/2SD2282] · Low collector-to-emitter saturation voltage :	Original	ENN3715 2SB1509/2SD2282 2039D 2SB1509/2SD2282] 2SB1509	PDF
2N3715 Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791 Text: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec	OCR Scan	2N3715 2N3716 2N3791/2N3792 2N3715AND2N3792 2N3791 2N3792 2n 3950 2N3792, 3715	PDF
bdw 51 52 Abstract: 5A pnp to 220 t 5877 BDW52C Text: POWER TRANSISTORS continued P O L A R IT Y (A )o a o A TYPE Epitaxial-base for linear and switching applications > an d < UJ o o c §> > < £ UJ u_ JZ > o in CNJ X 03 e II u ? □ > * Coming soon 30 PIMP NPN PNP NPN PIMP NPN PNP NPN PNP NPN PNP NPN NPN NPN	OCR Scan	BDW52C O-126 TQ-220 O-220 T0-220 bdw 51 52 5A pnp to 220 t 5877	PDF
RC-6123 Abstract: RC 6123 MELF 0207 str 6668 Micro MELF vishay melf 0204 melf RC3715 mini-melf beyschlag Text: V is hay Beyschlag w w w. v i s h a y. c o m S e l ector G uide thin film melf resistors resisti v e products V I S HAY I N T E R T E C HN O L O G Y , I N C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W	Original	VMN-SG2046-0607 RC-6123 RC 6123 MELF 0207 str 6668 Micro MELF vishay melf 0204 melf RC3715 mini-melf beyschlag	PDF
RC-6123 Abstract: vishay sr4 RC3715 Zener PH 200 0204 melf MELF 0207 diodes Text: V is hay Beysc hlag w w w. v i s h a y. c o m Selector Guide thin film melf resistors r e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W	Original	VMN-SG2046-0709 RC-6123 vishay sr4 RC3715 Zener PH 200 0204 melf MELF 0207 diodes	PDF
NPN transistor SST 117 Abstract: 2N3713 2N3714 J01B 2N3716 2N3715 L72B Text: T exas instr -c o p t o } Ta DE IflTblTEb 0D3bS71 □ \| ~ 62C 36 57 1 Ô 3 6 1 7 2 6 TEXAS INSTR COPTO 2N3713,2N3714,2N3715,2N3716 N-P-N SILICON POWER TRANSISTORS F E B R U A R Y 1 9 6 8 - R E V IS E D O C T O B E R 1 9 8 4 150 W at 25° C Case Temperature	OCR Scan	0D3bS71 2N3713 2N3714 2N3715 2N3716 2N3716 2N3714, NPN transistor SST 117 J01B L72B	PDF
bf679t Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages	OCR Scan	00G542E 569-GS bf679t transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor	PDF
Transistors bd 133 Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135 Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20	OCR Scan	TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135	PDF
BT 815 transistor Abstract: BT 816 transistor Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code	OCR Scan	0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor	PDF

transistor marking bh ra Abstract: 2SA1641 Text: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.	OCR Scan	2SA1641 31-IS I2326A 2SA1641-used transistor marking bh ra 2SA1641	PDF
bly89a Abstract: Transistor bly89a Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every	OCR Scan	Q01414fl BLY89A 7Z675I bly89a Transistor bly89a	PDF
POWER TRANSISTORS 10A 400v pnp Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352 Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE \|fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389	OCR Scan	T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352	PDF
2NXXXX Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE \|fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389	OCR Scan	88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package	PDF
312oc Abstract: mjf8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230 Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004 M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed	OCR Scan	MJE/MJF18004 O-220 AN1040. 312oc mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230	PDF
2N3713 Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1 Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz	OCR Scan	2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1	PDF
ic TT 2222 Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712 Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every	OCR Scan	BLY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712	PDF
EP33 Abstract: MC10EP33 MC10EP33D Text: MOTOROLA Order Number: MC10EP33/D Rev. 0.1, 05/1999 Semiconductor Components MC10EP33 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP33D SOIC Product Preview B4 Divider • • • • • • • • • • • • •	Original	MC10EP33/D MC10EP33 MC10EP33D 440ps EP33 MC10EP33 MC10EP33D	PDF
EP33 Abstract: MC10EP33 MC10EP33D Text: MOTOROLA Order Number: MC10EP33/D Rev. 0.2, 06/1999 Semiconductor Components MC10EP33 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP33D SOIC Product Preview B4 Divider PIN DESCRIPTION • • • • • • • • •	Original	MC10EP33/D MC10EP33 MC10EP33D 440ps EP33 MC10EP33 MC10EP33D	PDF
MC10EP32 Abstract: MC10EP32D Text: MOTOROLA Order Number: MC10EP32/D Rev. 0.1, 05/1999 Semiconductor Components MC10EP32 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP32D SOIC Product Preview B2 Divider • • • • • • • • • • • • •	Original	MC10EP32/D MC10EP32 MC10EP32D 355ps MC10EP32 MC10EP32D	PDF

3715 TRANSISTOR Search Results

3715 TRANSISTOR Result Highlights (5)

3715 TRANSISTOR Datasheets Context Search

2N3716

sd22

CB2203

2SB1509

3713

Untitled

2N3715

bdw 51 52

RC-6123

RC-6123

NPN transistor SST 117

bf679t

Transistors bd 133

BT 815 transistor

transistor marking bh ra

bly89a

POWER TRANSISTORS 10A 400v pnp

2NXXXX

312oc

2N3713

ic TT 2222

EP33

EP33

MC10EP32