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    HMD8M36M6

    Abstract: HMD8M36M6G
    Text: HANBit HMD8M36M6G 32Mbyte 8Mx36 72-pin SIMM FP with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6, HMD8M36M6G GENERAL DESCRIPTION The HMD8M36M6 is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a


    Original     		PDF HMD8M36M6G 32Mbyte 8Mx36) 72-pin HMD8M36M6, HMD8M36M6 36bit 50-pin 28pin HMD8M36M6G

    MB811

    Abstract: TPC 8608
    Text: November 1996 Revision 1.1 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642


    Original     		PDF FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, FSA4UN3644 FSA4UN3642 MB811 MB814100C- TPC 8608

    MB811

    Abstract: No abstract text available
    Text: July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B supports 2K refresh.


    Original     		PDF FSA4UN364 B-60J 16MByte 16-megabyte 36bits, 72-pin, FSA4UN3644B FSA4UN3642B MB811

    HMD8M36M18

    Abstract: HMD8M36M18G
    Text: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages


    Original     		PDF HMD8M36M18G 32Mbyte 8Mx36) 72-pin HMD8M36M18, HMD8M36M18G 36bit 24-pin 28pin HMD8M36M18

    simm EDO 72pin

    Abstract: HMD8M36M24EG edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17
    Text: HANBit HMD8M36M24EG 32Mbyte 8Mx36 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M24EG GENERAL DESCRIPTION The HMD8M36M24EG is a 8M x 36bit dynamic RAM high density memory module. The module consists of twenty four CMOS 4M x 4bit DRAM in 24-pin SOJ packages mounted on a 72 -pin, double-sided, FR-4-printed circuit board.


    Original     		PDF HMD8M36M24EG 32Mbyte 8Mx36) 72-pin HMD8M36M24EG 36bit 24-pin HMD8M36M24EG-5 simm EDO 72pin edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17

    MB811

    Abstract: No abstract text available
    Text: June1996 Revision 1.0 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360


    Original     		PDF June1996 FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB811

    Untitled

    Abstract: No abstract text available
    Text: TC55VDM536AFFN22/20/16/15 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 36M 3.3V Pipelined NtRAMTM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VDM536AFFN is a synchronous static random access memory SRAM organized as 1,048,576 words


    Original     		PDF TC55VDM536AFFN22/20/16/15 36Bit TC55VDM536AFFN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD44164182B-A μPD44164362B-A 18M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0014EJ0002 Rev.0.02 Aug 18, 2010 Description The μPD44164182B-A is a 1,048,576-word by 18-bit and the μPD44164362B-A is a 524,288-word by 36bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS


    Original     		PDF PD44164182B-A PD44164362B-A 18M-BIT R10DS0014EJ0002 PD44164182B-A 576-word 18-bit PD44164362B-A 288-word 36bit

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44164182B-A μPD44164362B-A 18M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0014EJ0100 Rev.1.00 Dec 13, 2010 Description The μPD44164182B-A is a 1,048,576-word by 18-bit and the μPD44164362B-A is a 524,288-word by 36bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS


    Original     		PDF PD44164182B-A PD44164362B-A 18M-BIT R10DS0014EJ0100 PD44164182B-A 576-word 18-bit PD44164362B-A 288-word 36bit

    marking WMM

    Abstract: RA52 1cas5 22r29
    Text: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory


    OCR Scan     		PDF 225mW 1024-cycle D01-4 T-46-23-17 MT4C4256DJ MT4C4259EJ marking WMM RA52 1cas5 22r29

    Untitled

    Abstract: No abstract text available
    Text: MT4C4004J 1 MEG X 4 DRAM M IC R O N DRAM 1 MEG x 4 DRAM FEATURES _ • Four independent CAS controls, allowing individual manipulation to each of the four data Input/Output ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words when using 1 Meg x 4 DRAMs for memory


    OCR Scan     		PDF MT4C4004J 36bit 225mW 024-cycle 4004JD

    dq35j

    Abstract: Nippon capacitors
    Text: MM2M0J32L / MM2M0J36L CMOS 2M x 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 64 Megabit Dynamic Random Access Memory Module organized as 2,097,152 x 32 x 36 bits in a 72 lead single inline module. The module contains sixteen 1M x 4bit Dynamic Random Access


    OCR Scan     		PDF MM2M0J32L MM2M0J36L 32bit 36bit MM1M0J32L/J36L MM2M0J32UMM2M0J36L x32biVx36blt dq35j Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: MM1M0J32L/MM1M0J36L CMOS 1Mx 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 32 Megabit Dynamic Random Access Memory Module organized as 1,048,576 x 32 x 36 bits in a 72 lead single inline module. The module contains eight 1M x 4bit Dynamic Random Access


    OCR Scan     		PDF MM1M0J32L/MM1M0J36L 32bit 36bit MM1M0J32L/J36L MM1M0J13- 57REF MM1M0J32UMM1M0J36L x32blt/x36bit CIQCI02D2 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B sup­


    OCR Scan     		PDF FSA4UN364 B-60J 16MByte 16-megabyte 36bits, 72-pin, FSA4UN3644B FSA4UN3642B

    T4C400

    Abstract: mt4c4004jdj
    Text: M T4C4004J 1 MEG X 4 DRAM l^ldRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES _ • Four independent C A S controls, allo w ing in d ivid u al m anipulation to each of the four data In p u t/O u tp ut ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words w hen using 1 M eg x 4 D R A M s for m emory


    OCR Scan     		PDF T4C4004J 36bit 225mW 024-cycle MT4C4001JDJ MT4C4004JDJ MT4C4004J MT4C40040 T4C400 mt4c4004jdj

    pj 996

    Abstract: Fujitsu IR c code
    Text: <p Jun e l 996 Revision 1.0 HATA fíH F F T - FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360


    OCR Scan     		PDF FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB814100C- pj 996 Fujitsu IR c code

    application tca 780

    Abstract: MH1M36EJ7
    Text: MITSUBISHI LSIs M H 1 M 3 6 E J - 6 , - 7 , - 8 , - 1 37748736-BIT 1048576-WORD BY36-BIT DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs in TSOP and eight industry standard 1M x 4 dynamic RAMs


    OCR Scan     		PDF 37748736-BIT 1048576-WORD BY36-BIT MH1M36EJ 1048576word 36bit MH1M36EJ- application tca 780 MH1M36EJ7

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSC2320A-XXYS9 262, 144 BY 36BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2320A-XXYS9 is a fully decoded, 262,144 words X 36 bit CMOS dynamic random access memory composed of eight 1 Mb DRAMs in SOJ MSM514256AJS and four 256 Kb drams in


    OCR Scan     		PDF MSC2320A-XXYS9 36BIT MSC2320A-XXYS9 MSM514256AJS) MSM51256JS) MSM511000AJS;

    Untitled

    Abstract: No abstract text available
    Text: blE D • bEM^f i SS 0DE047Û ‘l ô T ■ MITI MITSUBISHILSIs MH1M36EJ-6,-7,-8,-10 MITSUBISHI M E M O R Y / A S I C 37748736- BIT(1048576- WORD BY 36- BlT)DYNAMIC RAM DESCRIPTION The MH1M36EJ is 1048576word x 36bit dynamic RAM. This consists of four industry standard 1M x 1 dynamic RAMs


    OCR Scan     		PDF 0DE047Ã MH1M36EJ-6 MH1M36EJ 1048576word 36bit MH1M36EJ- b24Tfl25 37748736-BIT 1048576-WORD

    Untitled

    Abstract: No abstract text available
    Text: blE D • b 5 MSfl2 5 0 0 2 DSG1 OTE ■ M I T I MITSUBISHILSIs MH2M36EJ - 6, - 7, - 8, - 1 0 MITSUBISHI NEMORY/ASIC 75497472-BIT(2097152-WORD B Y 3 6 - BIT)DYNAMIC RAM DESCRIPTION The MH2M36EJ is 2097152 word x 36bit dynamic RAM. This consists of eight industry standard 1M x 1 dynamic


    OCR Scan     		PDF MH2M36EJ 75497472-BIT 2097152-WORD 36bit b24T5ES E4T62S

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M H 2 M 3 6 E J - 6 , - 7 , - 8 , - 1 75497472- BU 2097152- WORD BY36-B!T DYNAMIC RAM DESCRIPTION The MH2M 36EJ is 2 0 9 7 1 5 2 word x 36bit dynamic RAM. This consists of eight industry standard 1M x 1 PIN CONFIGURATIONfTOP VIEW ) dynamic


    OCR Scan     		PDF BY36-B 36bit MH2M36EJ- MH2M36EJ 36-BIT 75497472-BIT 2097152-WORD

    T4C4004JDJ

    Abstract: marking W7F
    Text: MT4C4004J 1 MEG X 4 DRAM I^ IIC R O N DRAM 1 MEG x 4 DRAM FEATURES _ PIN ASSIGNMENT Top View • Four independent CAS controls, allowing individual manipulation to each of the four data inpu t/output ports (DQ1 through DQ4). • Offers a single chip solution to byte level parity for 36bit words when using 1 M eg x 4 DRAMs for memory


    OCR Scan     		PDF MT4C4004J 36bit 275mW 024-cycle 24-Pin MT4C4001JDJ MT4C4004JDJ T4C4004JDJ marking W7F

    54e4

    Abstract: No abstract text available
    Text: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random


    OCR Scan     		PDF MSC2320A-XXYS9 36BIT 320A-XXY 51256JS SC2320A-XXYS9 m////77///////////////f f7711 b754S40 54e4

    TAA 840

    Abstract: MSM51256
    Text: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random


    OCR Scan     		PDF B4240 MSC2320A-XXYS9 36BIT MSM514256AJS) MSM51256JS) MSM511000AJS; msc2320A-xxys9 t-46-23-17 TAA 840 MSM51256