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    TE Connectivity CLWG-360-NC4

    LINEAR POT 5K M12 4M
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    ABB Low Voltage Products and Systems EHDBCK360-NC

    Contact Kit |Abb EHDBCK360-NC
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    360NC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HFA140MD60D

    Abstract: IRFP250
    Text: PD-40010 01/99 HFA140MD60D HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Anode 1 AC Cathode 2 Isolated Base VR = 600V VF typ. ‚ = 1.2V IF(AV) = 140A Qrr(typ.) = 360nC


    Original     		PDF PD-40010 HFA140MD60D 360nC HFA140MD60D IRFP250

    52N50C3

    Abstract: s4615 SPW52N50C3
    Text: SPW52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52N50C3 s4615 SPW52N50C3

    Untitled

    Abstract: No abstract text available
    Text: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • Worldwide best RDS(on) in TO-247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 O-247 PG-TO247 52N50C3 009-134-A

    HFA140MD60D

    Abstract: IRFP250
    Text: PD - HFA140MD60D HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG Anode AC Cathode TERMINAL TERMINAL TERMINAL 1 1 CATHODE ANODE 2 2 ANODE BASE ISOLATED


    Original     		PDF HFA140MD60D 360nC HFA140MD60D IRFP250

    52n50c3

    Abstract: SPW52N50C3
    Text: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 O-247 PG-TO247 52N50C3 009-134-A 52n50c3 SPW52N50C3

    52N50C3

    Abstract: SPW52N50C3
    Text: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 PG-TO247 Q67040-S4615 52N50C3 52N50C3 SPW52N50C3

    52n50c3

    Abstract: SPW52N50
    Text: SPW52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52n50c3 SPW52N50

    s4615

    Abstract: 52N50C3 SPW52N50C3
    Text: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 PG-TO247 Q67040-S4615 52N50C3 009-134-A O-247 s4615 52N50C3 SPW52N50C3

    1100nC

    Abstract: HFA140MD60C IRFP250
    Text: PD - 40009 rev. A 01/99 HFA140MD60C HEXFRED TM Ultrafast, Soft Recovery Diode Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 Isolated Base


    Original     		PDF HFA140MD60C 360nC 1100nC HFA140MD60C IRFP250

    52n50c3

    Abstract: s4615 SPW52N50C3
    Text: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52n50c3 s4615 SPW52N50C3

    Untitled

    Abstract: No abstract text available
    Text: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 PG-TO247 SPW52N50C3 Q67040-S4615 52N50C3

    Untitled

    Abstract: No abstract text available
    Text: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPW52N50C3 PG-TO247 SPW52N50C3 Q67040-S4615 52N50C3

    HFA140MD60C

    Abstract: IRFP250
    Text: PD - 4.009 HFA140MD60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 BASE ISOLATED VR = 600V


    Original     		PDF HFA140MD60C 360nC HFA140MD60C IRFP250