36 MT 160 Search Results

Contextual Info: CY7C4021KV13/CY7C4041KV13 72-Mbit QDR -IV HP SRAM 72-Mbit QDR™-IV HP SRAM Features • Configurations 72-Mbit density 4 M x 18, 2 M × 36 [1] CY7C4021KV13 – 4 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

Contextual Info: CY7C4121KV13/CY7C4141KV13 144-Mbit QDR -IV HP SRAM 144-Mbit QDR™-IV HP SRAM Features • Configurations 144-Mbit density 8 M x 18, 4 M × 36 [1] CY7C4121KV13 – 8 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

Contextual Info: CY7C4021KV13/CY7C4041KV13 72-Mbit QDR -IV HP SRAM 72-Mbit QDR™-IV HP SRAM Features • Configurations 72-Mbit density 4 M x 18, 2 M × 36 [1] CY7C4021KV13 – 4 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

Contextual Info: CY7C4121KV13/CY7C4141KV13 144-Mbit QDR -IV HP SRAM 144-Mbit QDR™-IV HP SRAM Features • Configurations 144-Mbit density 8 M x 18, 4 M × 36 [1] CY7C4121KV13 – 8 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

Contextual Info: CY7C4121KV13/CY7C4141KV13 144-Mbit QDR -IV HP SRAM 144-Mbit QDR™-IV HP SRAM Features • Configurations 144-Mbit density 8 M x 18, 4 M × 36 [1] CY7C4121KV13 – 8 M × 18 ■ Total Random Transaction Rate of 1334 MT/s ■ Maximum operating frequency of 667 MHz

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

bussmann

Abstract: 630MMT FEE 160 350FM 65EET bussmann 350 fm Bussmann fuse BS 88 32 ET bussmann fe 80 10CT 12CT
Contextual Info: Bussmann British Style BS 88 6-700A 690V Type † Rated Current RMS-Amps Electrical Characteristics I2t A2S Clearing Clearing Pre-arc at 415V at 660V 6 10 CT 12 16 20 25 32 35 40 ET 45 56 63 80 35 40 45 50 FE 63 71 80 90 100 90 110 EET 140 160 100 120

028A5

Abstract: MSP90 2SC5220 2SC550 BLY95 MSP40 MHT4513 2SC5240 BLY80 STC7644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

350FM

Abstract: 75EET 50FE 65EET 80ET 120FEE 160EET 400FMM 550FMM 63FE
Contextual Info: Bussmann British Style BS 88 6-700A 690V Type Rated Current RMS-Amps CT ET FE EET FEE FM FMM MT† MMT† 6 10 12 16 20 25 32 35 40 45 56 63 80 35 40 45 50 63 71 80 90 100 90 110 140 160 100 120 140 160 180 200 180 200 225 250 280 315 350 400 450 500 550

MT46V16M8

Abstract: MT9VDDT1672AG-265 MT9VDDT3272AY
Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR : 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT9VDDT1672A – 128MB1 MT9VDDT3272A – 256MB MT9VDDT6472A – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Figure 1: Features • 184-pin, unbuffered dual in-line memory module

1083200000

Abstract: Nut M40
Contextual Info: Shield connection terminals 242 Shield connection terminals Control Control signal digital analog CNC – GND CNC – GND Position signal KLBÜ SW + SW AGND PSTOP X5 NSTOP DGND The clamping yokes of the KLBÜ series permit a reliable and easy connection of

40b marking

Abstract: udimm MT9VDDT3272A PC2100 PC2700 PC3200 MT9VDDT6472AG-265
Contextual Info: 256MB, 512MB x72, ECC, SR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT9VDDT3272A – 256MB MT9VDDT6472A – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module

MSCD36

Contextual Info: MSKD36-16 MSAD36-16 MSCD36-16 Glass Passivated Rectifier Diode Modules VRRM 1600V IFAV 36 Amp Applications y y y Circuit MSKD 1 Features 3 2 y MSAD MSCD y 1 2 3 1 2 3 Non-controllable rectifiers for AC/AC converters Line rectifiers for transistorized AC motor

udimm

Contextual Info: 256MB, 512MB x72, ECC, SR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT9VDDT3272A – 256MB MT9VDDT6472A – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module

MT9VDDT1672AG-265

Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT9VDDT1672A – 128MB1 MT9VDDT3272A – 256MB MT9VDDT6472A – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 1: • 184-pin, unbuffered dual in-line memory module

Siemens Ferrite B64290

Abstract: B64290-K38-X830 B64290-K618-X830 B64290K618X830 B64290K618X35 B64290-A38-X1 B64290-A40-X830 siemens b64290 siemens r10 core B64290-K45-X830
Contextual Info: Ring Cores General Information ● Our product line includes a wide range of ring cores with finely graded diameters ranging from 2,5 to 200 mm see overview of available types . Other core heights can be supplied on request. All cores are available in the usual materials.

Contextual Info: MSFC60 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 60Amp Applications „ „ „ „ Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features „ „ „ „ „ „ International standard package

mt 10p10

Abstract: A106 Micro Capacitor 031-9540-000 MT A 10P10 2DA31P 2DC79P 2DA31S 2DC79S 995-0001-338 Hysol EE4198
Contextual Info: Electronic Components Cannon Microminiature Connectors Customer Support Locations ASIA Tuopandun Industrial Area, Jinda Cheng, Xiner Village, Shajing Town, Baoan District, Shenzhen City, Guangdong, China 518125 Phone: 86 755 2726 7238 Fax: (86) 755 2726 7515

128MB PC2100 DDR

Abstract: micron SDRAM SPD table
Contextual Info: 128MB, 256MB, 512MB x72, ECC, SR 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT9VDDT1672H – 128MB1 MT9VDDT3272H – 256MB MT9VDDT6472H – 512MB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 200-pin, small-outline dual in-line memory module

Siemens Ferrite B64290

Abstract: siemens b64290 siemens ring core b64290 B64290 Siemens Ferrite n67 Ferrite Siemens r4 B64290 K37-X38 N492 k659 B64290P35X830
Contextual Info: Ring Cores B64290 Overview of available types Type R 2,5 R 3,0 R 3,9 R 3,9/2 R 4,0 R 5,8 R 5,8/3 R 6,3 R 9,5/2 R 9,5 R 10 R 12,5 R 13,3 R 14 R 15 Dimensions da1 mm 2,5 ± 0,12 3,05 ± 0,2 3,94 ±0,12 3,94 ±0,12 4,0 ± 0,12 4,5 max) 5,84 ±0,12 (6,36 max)

thyristor 1200V 200A

Abstract: 200A thyristor gate control circuit
Contextual Info: MSFC60 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 60Amp Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability

364ADB2

Abstract: Hall Effect Current Sensors 364ADB2 MLX90365 MLX90364 390110 PTC04 903-65 390110000001 MLX90364LVS-ADB-200-RE melexis 90365
Contextual Info: MLX90364 Triaxis Position Sensor Assembly Features and Benefits Absolute Rotary & Linear Position Sensor IC Robust Dual Mold Package DMP feat. 4 Decoupling Capacitors (ESD/EMC) Reliable NoPCB Module Integration Triaxis Hall Technology Simple Magnetic Design

Contextual Info: MLX90364 Triaxis Position Sensor Assembly Features and Benefits Absolute Rotary & Linear Position Sensor IC Robust Dual Mold Package DMP feat. 4 Decoupling Capacitors (ESD/EMC) Reliable NoPCB Module Integration Triaxis Hall Technology Simple Magnetic Design

Contextual Info: MSFC60 Thyristor/Diode Modules 800 to 1600V 60Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability