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    35N60C3 Search Results

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    35N60C3 Price and Stock

    Infineon Technologies AG SPW35N60C3FKSA1

    MOSFET N-CH 650V 34.6A TO247-3
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    DigiKey SPW35N60C3FKSA1 Tube 131 1
    • 1 $10.43
    • 10 $10.43
    • 100 $6.20667
    • 1000 $5.05875
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    Avnet Americas SPW35N60C3FKSA1 Tube 15 Weeks 240
    • 1 -
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    • 1000 $4.8985
    • 10000 $4.77466
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    Mouser Electronics SPW35N60C3FKSA1 42
    • 1 $10.29
    • 10 $10.27
    • 100 $5.29
    • 1000 $5.05
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    Newark SPW35N60C3FKSA1 Bulk 1
    • 1 $9.76
    • 10 $9.54
    • 100 $5.5
    • 1000 $5.25
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    Rochester Electronics SPW35N60C3FKSA1 94 1
    • 1 $5.34
    • 10 $5.34
    • 100 $5.02
    • 1000 $4.54
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    EBV Elektronik SPW35N60C3FKSA1 16 Weeks 240
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    Win Source Electronics SPW35N60C3FKSA1 5,060
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    • 10 $5.392
    • 100 $4.175
    • 1000 $4.175
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    Infineon Technologies AG SPW35N60C3

    MOSFETs N-Ch 650V 34.6A TO247-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPW35N60C3 131
    • 1 $9.72
    • 10 $8.33
    • 100 $7.26
    • 1000 $6.13
    • 10000 $5.51
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    Bristol Electronics SPW35N60C3 20
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    TME SPW35N60C3 12 1
    • 1 $9.92
    • 10 $8.25
    • 100 $7.77
    • 1000 $7.77
    • 10000 $7.77
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    Win Source Electronics SPW35N60C3 5,062
    • 1 -
    • 10 $5.392
    • 100 $4.174
    • 1000 $4.174
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    35N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    35n60c3

    Abstract: 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c
    Text: 35N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		SPW35N60C3 P-TO247 Q67040-S4673 35N60C3 35n60c3 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c PDF

    35n60c3

    Abstract: SPW35N60C3 D219 D219A Q67040-S4673 35N60
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3 SPW35N60C3 D219 D219A Q67040-S4673 35N60 PDF

    35n60c3

    Abstract: SPW35N60C3 35n60 Q67040-S4673 D 346 transistor D346 TRANSISTOR sd 346
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 35n60c3 SPW35N60C3 35n60 Q67040-S4673 D 346 transistor D346 TRANSISTOR sd 346 PDF

    35n60c3

    Abstract: 35n60c D219
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 35n60c3 35n60c D219 PDF

    35n60c3

    Abstract: 35N60C SPW35N60C3 D219A D346 35N60 Q67040-S4673
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 35n60c3 35N60C SPW35N60C3 D219A D346 35N60 Q67040-S4673 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    35n60c3

    Abstract: No abstract text available
    Text: 35N60C3 TM CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3 PDF