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    35N60C Search Results

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    35N60C Price and Stock

    Littelfuse Inc IXKH35N60C5

    MOSFET N-CH 600V 35A TO247AD
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    DigiKey IXKH35N60C5 Tube 365 1
    • 1 $8.18
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    • 100 $6.72667
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    Newark IXKH35N60C5 Bulk 300
    • 1 -
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    • 1000 $7.05
    • 10000 $7.05
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    Infineon Technologies AG SPW35N60C3FKSA1

    MOSFET N-CH 650V 34.6A TO247-3
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    DigiKey SPW35N60C3FKSA1 Tube 145 1
    • 1 $9.04
    • 10 $9.04
    • 100 $5.675
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    Avnet Americas SPW35N60C3FKSA1 Tube 4 Weeks 62
    • 1 $6.72
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    • 100 $6.32
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    SPW35N60C3FKSA1 Tube 15 Weeks 240
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    • 1000 $5.5387
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    Mouser Electronics SPW35N60C3FKSA1 44
    • 1 $9.72
    • 10 $8.33
    • 100 $6.94
    • 1000 $6.13
    • 10000 $5.51
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    Newark SPW35N60C3FKSA1 Bulk 1
    • 1 $11.52
    • 10 $10.75
    • 100 $9.2
    • 1000 $8.23
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    Rochester Electronics SPW35N60C3FKSA1 80 1
    • 1 $5.9
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    • 100 $5.55
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    EBV Elektronik SPW35N60C3FKSA1 16 Weeks 240
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    Win Source Electronics SPW35N60C3FKSA1 5,060
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    • 100 $4.522
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    Infineon Technologies AG SPW35N60CFDFKSA1

    MOSFET N-CH 600V 34.1A TO247-3
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    DigiKey SPW35N60CFDFKSA1 Tube 131 1
    • 1 $9.64
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    • 100 $6.074
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    Avnet Americas SPW35N60CFDFKSA1 Tube 4 Weeks 57
    • 1 $6.74
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    • 100 $6.33
    • 1000 $6.07
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    SPW35N60CFDFKSA1 Tube 15 Weeks 30
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    • 1000 $5.5484
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    Newark SPW35N60CFDFKSA1 Bulk 304 1
    • 1 $11.54
    • 10 $9.9
    • 100 $8.61
    • 1000 $7.28
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    Rochester Electronics SPW35N60CFDFKSA1 189 1
    • 1 $6.39
    • 10 $6.39
    • 100 $6.01
    • 1000 $5.44
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    Chip1Stop SPW35N60CFDFKSA1 220
    • 1 $11.477
    • 10 $11.477
    • 100 $6.8905
    • 1000 $6.51
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    EBV Elektronik SPW35N60CFDFKSA1 1,440 16 Weeks 240
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    New Advantage Corporation SPW35N60CFDFKSA1 1,200 1
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    • 1000 $10.38
    • 10000 $9.61
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    Win Source Electronics SPW35N60CFDFKSA1 6,000
    • 1 -
    • 10 $11.305
    • 100 $7.537
    • 1000 $7.537
    • 10000 $7.537
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    Infineon Technologies AG SPW35N60C3

    MOSFETs N-Ch 650V 34.6A TO247-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPW35N60C3 182
    • 1 $9.72
    • 10 $8.33
    • 100 $6.94
    • 1000 $6.13
    • 10000 $5.51
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    Bristol Electronics SPW35N60C3 20
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    TME SPW35N60C3 26 1
    • 1 $10.53
    • 10 $8.75
    • 100 $8.25
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    Win Source Electronics SPW35N60C3 5,062
    • 1 -
    • 10 $6.783
    • 100 $4.522
    • 1000 $4.522
    • 10000 $4.522
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    Infineon Technologies AG SPW35N60CFD

    MOSFETs N-Ch 600V 34.1A TO247-3 CoolMOS CFD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPW35N60CFD 130
    • 1 $11.28
    • 10 $8.08
    • 100 $6.07
    • 1000 $5.77
    • 10000 $5.77
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    TME SPW35N60CFD 1
    • 1 $12.79
    • 10 $11.47
    • 100 $9.1
    • 1000 $9.1
    • 10000 $9.1
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    Chip1Stop SPW35N60CFD 92
    • 1 $12.1
    • 10 $9.2
    • 100 $6.64
    • 1000 $6.64
    • 10000 $6.64
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    Win Source Electronics SPW35N60CFD 6,059
    • 1 -
    • 10 $11.305
    • 100 $7.537
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    Find more 35N60C price and stock on Findchips.com

    35N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S  D(TAB) Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247 20070625a

    35n60c

    Abstract: ixkp35n60c5m
    Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 35N60C5M O-220 20080310a 35n60c ixkp35n60c5m

    IXKH35N60C5

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20090209c IXKH35N60C5

    DSA003710

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247 20070625a DSA003710

    35n60

    Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB
    Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 35N60C5 O-247 O-220 20080523a 35n60 IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information ID25 = 35 A = 600 V VDSS RDS on max = 0.1 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G


    Original     		PDF 35N60C5 35N60C5 O-247 O-220

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20090209c

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20080310b

    35n60c3

    Abstract: 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c
    Text: 35N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 P-TO247 Q67040-S4673 35N60C3 35n60c3 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c

    35N60CFD

    Abstract: SPW35N60CFD JESD22 Q67045A5053 D219
    Text: 35N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 009-134-A PG-TO247-3-21-41 35N60CFD SPW35N60CFD JESD22 Q67045A5053 D219

    35N60CFD

    Abstract: SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor
    Text: 35N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 35N60CFD SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor

    35n60c3

    Abstract: SPW35N60C3 D219 D219A Q67040-S4673 35N60
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3 SPW35N60C3 D219 D219A Q67040-S4673 35N60

    35n60c3

    Abstract: SPW35N60C3 35n60 Q67040-S4673 D 346 transistor D346 TRANSISTOR sd 346
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 35n60c3 SPW35N60C3 35n60 Q67040-S4673 D 346 transistor D346 TRANSISTOR sd 346

    35n60c3

    Abstract: 35n60c D219
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 35n60c3 35n60c D219

    35n60c3

    Abstract: 35N60C SPW35N60C3 D219A D346 35N60 Q67040-S4673
    Text: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 35n60c3 35N60C SPW35N60C3 D219A D346 35N60 Q67040-S4673

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    35N60CFD

    Abstract: No abstract text available
    Text: 35N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 35N60CFD

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    35n60c3

    Abstract: No abstract text available
    Text: 35N60C3 TM CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances


    Original     		PDF SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3