Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    35N140A Search Results

    SF Impression Pixel

    35N140A Price and Stock

    IXYS Corporation IXSH35N140A

    IGBT 1400V 70A 300W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH35N140A Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    35N140A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPS SIEMENS

    Abstract: 35n140a
    Text: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat 1400 V 70 A 4V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 35N140A 728B1 123B1 728B1 065B1 UPS SIEMENS 35n140a

    35N140A

    Abstract: No abstract text available
    Text: High Voltage, High speed IGBT IXSH 35N140A IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C VCGR T J = 25°C to 150°C; RGE = 1 MW VGES VGEM 35N140A 35N135A 35N140A 35N135A 1400 1350 1400 1350 V V


    Original     		PDF 35N140A 35N135A 35N135A O-247 pack16

    RG3250

    Abstract: 35N140A
    Text: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat 1400 V 70 A 4V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 35N140A 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 35N140A 1400 V VGES Continuous ±20


    Original     		PDF 35N140A O-247 728B1 123B1 065B1 35N140A RG3250

    35N140A

    Abstract: VNA4 jm 60 ac
    Text: High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N140A IXSH 35N135A Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C


    Original     		PDF 35N140A 35N135A 35N140A VNA4 jm 60 ac

    IXSH35N135A

    Abstract: IXSH35N140A
    Text: High Voltage, High speed IGBT IXSH 35N140A IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; RGE = 1 MW 35N140A 35N135A 35N140A 35N135A 1400 1350 1400 1350 V V V V VGES Continuous


    Original     		PDF 35N140A 35N135A O-247 IXSH35N135A IXSH35N140A

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat = 1400 V = 70 A = 4V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1400 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1400 V VGES Continuous


    Original     		PDF 35N140A

    35N140A

    Abstract: No abstract text available
    Text: High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N140A IXSH 35N135A Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90


    Original     		PDF 35N140A 35N135A O-247 728B1 123B1 065B1 35N135A

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    B1109

    Abstract: b1105 B1115 80n60a 80N60B IXSN80N60A B1-76 15N120B B180
    Text: SCSOA IGBT S-Series Contents IGBT High Speed Low VCE sat VCES max IC VCE(sat) max PLUS247 TO-204 (IXSX) (IXSM) TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page TC = 25 °C TC = 25 °C V A V 600 48 2.2 IXSH 24N60 1000 75 2.7 IXSH 45N100 1200


    Original     		PDF PLUS247 O-204 O-247 O-264 O-268 80N60B 35N100A 15N120B 25N120A B1109 b1105 B1115 80n60a IXSN80N60A B1-76 B180

    126P1

    Abstract: No abstract text available
    Text: nixYS Advanced Data High Voltage, High speed IGBT VCES ^C25 VCE sat IXSH 35N140A IXSH 35N135A 1400 V 1350 V 70 A 70 A 4V 4V Maximum Ratings TO-247AD « Short Circuit S O A Capability Symbol Test Conditions vCES ^ =25°C to150°C vCGR ^ = 25° C to 150° C; RGE= 1 M il


    OCR Scan     		PDF 35N140A 35N135A to150 O-247AD 126P1

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    IXSH35N140A

    Abstract: 53al bj 113
    Text: □ IXYS : Advanced data v CES High Voltage, High speed IGBT IX S H 35N 140A 1400 V IX S H 35 N 1 3 5A 1350 V ^C25 VCE sat 70 A 70 A 4V 4V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions v* CHS Tj = 25°C to 150°C v* CGR ^ v GES Continuous


    OCR Scan     		PDF IXSH35N140A IXSH35N135A 35N140A 35N135A O-247 0003TÃ 53al bj 113

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		PDF 2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan     		PDF T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60