35N140A
Abstract: No abstract text available
Text: High Voltage, High speed IGBT IXSH 35N140A IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C VCGR T J = 25°C to 150°C; RGE = 1 MW VGES VGEM 35N140A 35N135A 35N140A 35N135A 1400 1350 1400 1350 V V
|
Original
|
PDF
|
35N140A
35N135A
35N135A
O-247
pack16
|
Untitled
Abstract: No abstract text available
Text: High Voltage, High speed IGBT IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1350 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1350 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90
|
Original
|
PDF
|
35N135A
O-247
|
35N140A
Abstract: VNA4 jm 60 ac
Text: High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N140A IXSH 35N135A Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C
|
Original
|
PDF
|
35N140A
35N135A
35N140A
VNA4
jm 60 ac
|
IXSH35N135A
Abstract: IXSH35N140A
Text: High Voltage, High speed IGBT IXSH 35N140A IXSH 35N135A Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; RGE = 1 MW 35N140A 35N135A 35N140A 35N135A 1400 1350 1400 1350 V V V V VGES Continuous
|
Original
|
PDF
|
35N140A
35N135A
O-247
IXSH35N135A
IXSH35N140A
|
35N140A
Abstract: No abstract text available
Text: High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N140A IXSH 35N135A Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90
|
Original
|
PDF
|
35N140A
35N135A
O-247
728B1
123B1
065B1
35N135A
|
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
|
Original
|
PDF
|
AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
|
40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
|
Original
|
PDF
|
O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
|
B1109
Abstract: b1105 B1115 80n60a 80N60B IXSN80N60A B1-76 15N120B B180
Text: SCSOA IGBT S-Series Contents IGBT High Speed Low VCE sat VCES max IC VCE(sat) max PLUS247 TO-204 (IXSX) (IXSM) TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page TC = 25 °C TC = 25 °C V A V 600 48 2.2 IXSH 24N60 1000 75 2.7 IXSH 45N100 1200
|
Original
|
PDF
|
PLUS247
O-204
O-247
O-264
O-268
80N60B
35N100A
15N120B
25N120A
B1109
b1105
B1115
80n60a
IXSN80N60A
B1-76
B180
|
126P1
Abstract: No abstract text available
Text: nixYS Advanced Data High Voltage, High speed IGBT VCES ^C25 VCE sat IXSH 35N140A IXSH 35N135A 1400 V 1350 V 70 A 70 A 4V 4V Maximum Ratings TO-247AD « Short Circuit S O A Capability Symbol Test Conditions vCES ^ =25°C to150°C vCGR ^ = 25° C to 150° C; RGE= 1 M il
|
OCR Scan
|
PDF
|
35N140A
35N135A
to150
O-247AD
126P1
|
B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
|
OCR Scan
|
PDF
|
O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
|
IXSH35N140A
Abstract: 53al bj 113
Text: □ IXYS : Advanced data v CES High Voltage, High speed IGBT IX S H 35N 140A 1400 V IX S H 35 N 1 3 5A 1350 V ^C25 VCE sat 70 A 70 A 4V 4V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions v* CHS Tj = 25°C to 150°C v* CGR ^ v GES Continuous
|
OCR Scan
|
PDF
|
IXSH35N140A
IXSH35N135A
35N140A
35N135A
O-247
0003TÃ
53al
bj 113
|
BTS 3900 a
Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device
|
OCR Scan
|
PDF
|
T-227B
BTS 3900 a
BTS 3900
12N60
BTS 3900 l
35N120U1
24n60
52N60A
IXSH 35N120AU1
35n120u
35N120AU1
|
b14 smd diode
Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60
|
OCR Scan
|
PDF
|
T0-220
O-263
O-247
O-247
T0-204
24N60
30N60
40N60
25N100
45N100
b14 smd diode
B1108
DIODE SMD b14
smd diode B1100
16N60
B1106
B1112
B1108 D
B1116
IXYS 30N60
|