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    35N10 Search Results

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    35N10 Price and Stock

    Infineon Technologies AG BSC035N10NS5ATMA1

    MOSFET N-CH 100V 100A TDSON
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    DigiKey BSC035N10NS5ATMA1 Reel 10,000 5,000
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    BSC035N10NS5ATMA1 Cut Tape 3,525 1
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    Avnet Americas BSC035N10NS5ATMA1 Reel 100,000 20 Weeks 5,000
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    Mouser Electronics BSC035N10NS5ATMA1 39,898
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    Bristol Electronics BSC035N10NS5ATMA1 13,906
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    TME BSC035N10NS5ATMA1 1
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    Chip1Stop BSC035N10NS5ATMA1 Cut Tape 23,392
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    New Advantage Corporation BSC035N10NS5ATMA1 10,000 1
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    Diotec Semiconductor AG DI035N10PT

    MOSFET POWERQFN 3X3 N 100V 35A 0
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    DigiKey DI035N10PT Reel 5,000 5,000
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    Mouser Electronics DI035N10PT
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    TME DI035N10PT 1
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    New Advantage Corporation DI035N10PT 2,605 1
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    Diotec Semiconductor AG DI035N10PT-AQ

    MOSFET POWERQFN 3X3 N 100V 35A 0
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    Mouser Electronics DI035N10PT-AQ 4,011
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    Infineon Technologies AG IPB35N10S3L26ATMA1

    MOSFET N-CH 100V 35A D2PAK
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    DigiKey IPB35N10S3L26ATMA1 Reel 4,000 1,000
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    IPB35N10S3L26ATMA1 Cut Tape 475 1
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    Mouser Electronics IPB35N10S3L26ATMA1 4,540
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    Rochester Electronics IPB35N10S3L26ATMA1 3,752 1
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    Chip1Stop IPB35N10S3L26ATMA1 Cut Tape 1,000
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    Vishay Siliconix SUD35N10-26P-GE3

    MOSFET N-CH 100V 35A TO252
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    DigiKey SUD35N10-26P-GE3 Cut Tape 1,990 1
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    Find more 35N10 price and stock on Findchips.com

    35N10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    35N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    35N100U1 IXYS IGBT With Diode High Short Circuit Soa Capability Original PDF

    35N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    35N100U1

    Abstract: irm 38 D-68623 ixsn35n100u1
    Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 Symbol Test Conditions V CES TJ = 25°C to 150°C 1 Maximum Ratings 1000 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM A Continuous ±20


    Original     		PDF 35N100U1 OT-227 50/orporation D-68623 35N100U1 irm 38 ixsn35n100u1

    Untitled

    Abstract: No abstract text available
    Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM


    Original     		PDF 35N100A O-247 O-204

    35n10

    Abstract: No abstract text available
    Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM


    Original     		PDF 35N100A O-204 O-247 35n10

    Untitled

    Abstract: No abstract text available
    Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM


    Original     		PDF 35N100A 35N100A O-247 O-204

    35N100A

    Abstract: 35N10
    Text: High speed IGBT IXSH/IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 35N100A O-247 O-204 O-204AE 35N100A 35N10

    35N100U1

    Abstract: IXSN35N100U1
    Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 A VGES Continuous ±20


    Original     		PDF 35N100U1 OT-227 35N100U1 IXSN35N100U1

    SPD35N10

    Abstract: 35n10 P-TO252 Q67042-S4125
    Text: 35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A  Avalanche rated P-TO252  dv/dt rated Type 35N10 Package P-TO252 Ordering Code


    Original     		PDF SPD35N10 P-TO252 Q67042-S4125 35N10 SPD35N10 35n10 P-TO252 Q67042-S4125

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    35n10

    Abstract: SMD marking code 35A
    Text: 35N10 35N10,35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated P-TO262-3-1 V R DS on 44 m ID 35 A P-TO263-3-2 P-TO220-3-1  dv/dt rated Type 35N10 Package


    Original     		PDF SPI35N10 SPP35N10 SPB35N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB35N10 SPI35N10 P-TO220-3-1 35n10 SMD marking code 35A

    35n10

    Abstract: SPB35N10 SPI35N10 SPP35N10 DSA00135269 Q67042-S4103
    Text: Preliminary data 35N10 35N10,35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated P-TO262-3-1 V R DS on 44 m ID 35 A P-TO263-3-2 P-TO220-3-1  dv/dt rated


    Original     		PDF SPI35N10 SPP35N10 SPB35N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP35N10 Q67042-S4123 35n10 SPB35N10 SPI35N10 DSA00135269 Q67042-S4103

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original     		PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    TC1724

    Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784
    Text: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions


    Original     		PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode IXSN 35N100U1 v C ES ^C 25 v C E sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability éAi 2 4 Sym bol T est C onditions VC ES ^ = 25°C to 150°C 1000 V vC G R ^ = 25°C to 150°C; RGE = 1 MQ 1000 A VG ES Continuous ±20 V v G EM


    OCR Scan     		PDF 35N100U1 000372G

    ixsn 35N120U1

    Abstract: 35N120U1 IXSN35N120U1 35n120u 40D50
    Text: nixYS IGBT with Diode IXSN 35N100U1 IXSN 35N120U1 1000/1200 V 38 A 3.5 V CES ^C25 v CE sat Short Circuit SOA Capability G é Maximum Ratings Symbol Test Conditions V CES Tj =25°C to150°C 1000/1200 V V COR Tj = 25° C to 150° C; RGE= 1 M i2 1000/1200 V


    OCR Scan     		PDF 35N100U1 35N120U1 to150 OT-227B, ixsn 35N120U1 35N120U1 IXSN35N120U1 35n120u 40D50

    35N120U1

    Abstract: No abstract text available
    Text: IGBT with Diode IXSN 35N100U1 IXSN 35N120U1 CES C25 VCE sat 1000/1200 V 38 A 3.5 V Short Circuit SOA Capability G é Symbol Test C onditions VCES T j = 25°C to 150°C 1000/1200 v CGR T j = 25°C to 150°C; RQE = 1 MQ 1000/1200 V v0ES Continuous ±20 V VGEM


    OCR Scan     		PDF 35N100U1 35N120U1 OT-227B, JXSN35N180U1 35M120U1 35N120U1

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM


    OCR Scan     		PDF 35N100A 4bfib22t. 4bflb22b 00D3712

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â