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    35ME Search Results

    35ME Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R5F35ME3JFE Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), , / Visit Renesas Electronics Corporation
    R5F35MEEKFE Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), , / Visit Renesas Electronics Corporation
    R5F35MEEJFE Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), , / Visit Renesas Electronics Corporation
    R5F35ME6JFE Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), , / Visit Renesas Electronics Corporation
    R5F35ME6KFE Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), , / Visit Renesas Electronics Corporation
    R5F35ME3KFE Renesas Electronics Corporation 16-bit Microcomputers (Non Promotion), , / Visit Renesas Electronics Corporation
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    35ME Price and Stock

    Cornell Dubilier Electronics Inc 107SVH035MEL

    CAP ALUM 100UF 20% 35V SMD
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    DigiKey 107SVH035MEL Reel 18,000 1,000
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    107SVH035MEL Cut Tape 1,639 1
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    Murata Manufacturing Co Ltd LLL1U4R60G435ME22D

    CAP CER 4.3UF 4V X5R 0204
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    DigiKey LLL1U4R60G435ME22D Cut Tape 9,540 1
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    Mouser Electronics LLL1U4R60G435ME22D 23,221
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    Rochester Electronics LLC MAX5435MEZT-T

    32-TAP, NVM I2C, LINEAR, DIGIPOT
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    DigiKey MAX5435MEZT-T Bulk 1,318 231
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    Maxim Integrated Products MAX5435MEZT+T

    IC DGT POT 100KOHM 32TP TSOT23-6
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    Rochester Electronics LLC MAX5435MEZT

    32-TAP, NVM I2C, LINEAR, DIGIPOT
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    35ME Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    35ME100HWN Sanyo Semiconductor Capacitor: 100UF: 35: 20%: 10 x 12.5: RDL: 5: 200: 2000 Original PDF
    35ME10HWN Sanyo Semiconductor Capacitor: 10UF: 35: 20%: 5 x 11: RDL: 2: 45: 2000 Original PDF
    35ME220HWN Sanyo Semiconductor Capacitor: 220UF: 35: 20%: 10 x 20: RDL: 5: 350: 2000 Original PDF
    35ME22HWN Sanyo Semiconductor Capacitor: 22UF: 35: 20%: 6.3 x 11: RDL: 2.5: 75: 2000 Original PDF
    35ME330HWN Sanyo Semiconductor Capacitor: 330UF: 35: 20%: 12.5 x 20: RDL: 5: 440: 2000 Original PDF
    35ME33HWN Sanyo Semiconductor Capacitor: 33UF: 35: 20%: 6.3 x 11: RDL: 2.5: 90: 2000 Original PDF
    35ME470HWN Sanyo Semiconductor Capacitor: 470UF: 35: 20%: 12.5 x 25: RDL: 5: 585: 2000 Original PDF
    35ME47HWN Sanyo Semiconductor Capacitor: 47UF: 35: 20%: 8 x 11.5: RDL: 3.5: 125: 2000 Original PDF
    35ME4R7HWN Sanyo Semiconductor Capacitor: 4.7UF: 35: 20%: 5 x 11: RDL: 2: 30: 2000 Original PDF

    35ME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 2N7274D 2N7274H 2N7274R
    Text: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM230 2N7274D, 2N7274R 2N7274H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 2N7274D 2N7274H 2N7274R

    Mosfet RM3

    Abstract: rm3 transistor ISFET BAV99LT1G smd transistor 6m RK73H1JT1002F DIODE SMD C212 sanyo c35 smd transistor 6p r315 TRANSISTOR
    Text: Application Note 1544 ISL8200MEVAL2PHZ Evaluation Board User’s Guide VOUT = 1V LOAD UP TO 20A PGOOD VIN = UP TO 20V VOUT SENSING POINT MODULE GROUP 2 U301 IOUT STEP SENSING POINT TRANSIENT LOAD CIRCUIT MODULE GROUP 1 (U201) 12V SUPPLY FOR TRANSIENT LOAD


    Original     		PDF ISL8200MEVAL2PHZ ISL8200M 12VIN 20VIN AN1544 Mosfet RM3 rm3 transistor ISFET BAV99LT1G smd transistor 6m RK73H1JT1002F DIODE SMD C212 sanyo c35 smd transistor 6p r315 TRANSISTOR

    IS-1845ASRH

    Abstract: No abstract text available
    Text: Single Event Testing of the IS-1845ASRHPulse Width Modulator Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL , single-event transient (SET) and


    Original     		PDF IS-1845ASRHPulse -1845ASRH 5x10-6 35MeV/mg/cm2 IS-1845ASRH

    12-0-12 transformer used 24v dc supply

    Abstract: smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
    Text: Application Note 1491 ISL6721EVAL3Z: Resonant Reset Forward Converters for Low Power Applications Abstract Design Specifications Low cost, isolated power supplies with multiple outputs are common in many applications such as automotive, security monitoring, telecom, medical instruments, etc.


    Original     		PDF ISL6721EVAL3Z: 8x12-STATIC-BAG AN1491 12-0-12 transformer used 24v dc supply smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a

    5962F0251101VXC

    Abstract: 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
    Text: IS-1825ASRH TM Data Sheet February 2002 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high


    Original     		PDF IS-1825ASRH FN9065 5962F0251101VXC 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC

    LTM4600

    Abstract: No abstract text available
    Text: DEMO MANUAL DC823B-A LTM4600: 20V, 10A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit DC823B-A features the LTM®4600EV, a 10A high efficiency, high density switch mode step-down power module. The input voltage is from 4.5V to 20V. The output voltage is programmable from


    Original     		PDF DC823B-A LTM4600: DC823B-A 4600EV, LTM4600 DC823B-A. dc823baf

    zener 6.3V

    Abstract: 8251F cap 150uf 35v 10uF 25V LTM4603HVEV JMK432BJ107MU-T 1083A 10uf 35v 2R5TPE330M9 JMK316BJ226ML-T501
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1083A-B 6A HIGH VOLTAGE HIGH DENSITY POWER MODULE LTM4603HVEV DESCRIPTION Demonstration circuit DC1083A-B features the LTM 4603EV, the high efficiency, high density switch mode step-down power module. The input voltage


    Original     		PDF 083A-B LTM4603HVEV DC1083A-B 4603EV, LTM4603 th07MU-T 0603YC104MAT2A LMK107BJ105KA MMBZ5231B zener 6.3V 8251F cap 150uf 35v 10uF 25V LTM4603HVEV JMK432BJ107MU-T 1083A 10uf 35v 2R5TPE330M9 JMK316BJ226ML-T501

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC823B-B LTM4600HV: 28V, 10A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit DC823B-B features the LTM®4600HVEV, a 10A high efficiency, high density switch mode step-down power module. The input voltage is from 4.5V to 28V. The output voltage is programmable from


    Original     		PDF DC823B-B LTM4600HV: DC823B-B 4600HVEV, LTM4600HV DC823B-B. dc823bbf

    2R5TPF470ML

    Abstract: DIODE SMD 44w 35ME330AX SANYO RoHS Simple test MOSFET Procedures smd transistor 44w infineon smd TDSON-08 35ME330AX 35me capacitor 470uf 35v
    Text: Using the ISL8105BEVAL1Z, ISL8105BEVAL2Z PWM Controller Evaluation Board Application Note Introduction The ISL8105B is a simple single-phase PWM controller for a synchronous buck converter that operates from +5V or +12V bias supply voltage. With integrated linear regulator, boot diode,


    Original     		PDF ISL8105BEVAL1Z, ISL8105BEVAL2Z ISL8105B ISL8105BEVAL2Z ISL8105BEVAL1Z 2R5TPF470ML DIODE SMD 44w 35ME330AX SANYO RoHS Simple test MOSFET Procedures smd transistor 44w infineon smd TDSON-08 35ME330AX 35me capacitor 470uf 35v

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOM MENDED FO R NEW DESIG R E C O MME N NS DED REPLA CEMENT PA ISL7884XAR R T H, ISL7884X AEH Single Event Radiation Hardened High Speed, Current Mode PWM IS-1845ASRH, IS-1845ASEH Features The IS-1845ASRH, IS-1845ASEH are designed to be used in switching


    Original     		PDF ISL7884XAR ISL7884X IS-1845ASRH, IS-1845ASEH IS-1845ASEH MIL-PRF-38535 FN9001

    IRLR2905 SMD

    Abstract: IRLR2905PBF 4x4 ecu 100ME100AX CR0805-8W-1000FT C0805X7R500103JNE CR0805-8W-1002FT C1206COG101 100ME100AX T MUR5120T3
    Text: Using the ISL6401 RSLIC PWM Controller Evaluation Board Application Note January 30, 2009 AN1082.2 Author: Manisha Pandya, Jason Houston Functional Description The ISL6401 pulse width modulating PWM current mode controller is designed for a wide range of DC/DC conversion


    Original     		PDF ISL6401 AN1082 ISL6401EVAL1Z IRLR2905 SMD IRLR2905PBF 4x4 ecu 100ME100AX CR0805-8W-1000FT C0805X7R500103JNE CR0805-8W-1002FT C1206COG101 100ME100AX T MUR5120T3

    IS-1845ASRH

    Abstract: CDIP2-T8
    Text: IS-1845ASRH TM Data Sheet November 2000 Single Event Radiation Hardened High Speed, Current Mode PWM File Number 9001 Features • Electrically Screened to DSCC SMD # 5962-01509 The IS-1845ASRH is designed to be used in switching power supplies operating in current-mode. The


    Original     		PDF IS-1845ASRH IS-1845ASRH MIL-PRF-38535 300krad CDIP2-T8

    k20a

    Abstract: IS1825ASRH IS9-1825BSEH-Q ISL71823ASRHVX
    Text: Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, ISL71823BSRH The single event and total dose hardened pulse width Features modulators are designed to be used in high frequency, switching power supplies in either voltage or current-mode


    Original     		PDF IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, ISL71823BSRH IS-1825BSRH IS-1825BSEH ISL71823ASRH k20a IS1825ASRH IS9-1825BSEH-Q ISL71823ASRHVX

    low range photo transistor

    Abstract: frl9130 2E12 2N7308D 2N7308H 2N7308R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 5A, -100V, RDS(on) = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRL9130 2N7308D, 2N7308R 2N7308H -100V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD low range photo transistor 2E12 2N7308D 2N7308H 2N7308R

    FRL230* harris

    Abstract: 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 5A, 200V, RDS(on) = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRL230 2N7275D, 2N7275R 2N7275H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD FRL230* harris 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275

    2N7313

    Abstract: Rad Hard in MOSFET power p channel mosfet rad hard
    Text: HARRIS SEI UCOND SECTOR m H A R R IS U U H arris rc a • oi • D • OBJECTIVE S E M I C O N D U C T O R • 40E 0Q33Û3M T MHAS 2N7313R, 2N7313H n r-.n I .n REG ISTRATIO N PENDING Available As FRM 9430R, FRM9430H in te r s il ' M3G2271 _ i I 11 1 .5 A .-5 0 0 V


    OCR Scan     		PDF M3G2271 2N7313R, 2N7313H 9430R, FRM9430H 2N7313 Rad Hard in MOSFET power p channel mosfet rad hard

    2N7326

    Abstract: No abstract text available
    Text: i HARRIS U a J HARRIS S E M I C O N D U C T O R RCA GE M305S71 0033647 8 « H A S 4QE J> HARRIS SEPIICONI SECTOR OBJECTIVE 2N7326R, 2N7326H REGISTRATION PENDING Available As FRM9450R, FRM9450H INTERSIL _ 6A, -5 0 0 V RDS on =1.80n This Objective Data Sheet Represents the Proposed Device Performance.


    OCR Scan     		PDF M305S71 2N7326R, 2N7326H FRM9450R, FRM9450H 2N7326

    2N7332

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR ffj HARRIS 1 if n - r HARRIS SEMICONDUCTOR RCA GE MOE D OBJECTIVE 4302271 ÜD33ÖS1 T BiHAS 2N7332R, 2N7332H REGISTRATION PENDING Available As FRK9460R, FRK9460H IN T E R S IL -T 1Q A,-500V RDS on =1.20n This Objective Data Sheet Represents the Proposed Device Performance.


    OCR Scan     		PDF 2N7332R, 2N7332H FRK9460R, FRK9460H -500V 2N7332

    6283K

    Abstract: LB1291
    Text: Ordering number: EN 1044C M onolithic Digital 1C LB1291 8-Channel Driver Array The LB1291 has been designed for interfacing between low level digital devices and fluorescent display tubes. Its 8 -channel independent Darlington output stage is used for digit or segment drivers. Also, with pull-down equivalent


    OCR Scan     		PDF 1044C LB1291 LB1291 5V/30mA 6283K

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q


    OCR Scan     		PDF FRM450 M3GES71 D04S741 2N7297D, 2N7297R 2N7297H 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS æ S E M IC O N D SECTO R bSE D • lHARRlS S E M I C O N D U C T O R 4305571 G D M ^O M l 7 3 e! « H A S 2N7277D, 2N7277R 2N7277H REGISTRATION PENDING Currently Available as FRM234 D, R, H . . Radiation Hardened N-Channel Power MOSFETs ju n « 1993


    OCR Scan     		PDF 2N7277D, 2N7277R 2N7277H FRM234 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AA

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICON] SECTOR SfiE D • M3QEE71 DDMS772 GIT B H A S 2N7305D, 2N7305H 2N7305H HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK460 D, R, H) Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Features • 17A, 500V, RDS{on) x 0.400»


    OCR Scan     		PDF M3QEE71 DDMS772 2N7305D, 2N7305H FRK460 100KRAD 1000KRAD to3000KRAD Typica-8831,

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR 30 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK260 D, R, H • 4 3 0 2 27 1 0 0 4 5 7 b 2 17G H H A S 2N7301D, 2N73U1H 2N7301H Radiation Hardened N-Channel Power MOSFETs December 1992 T & f- iS


    OCR Scan     		PDF FRK260 2N7301D, 2N73U1H 2N7301H 100KRAD 300KRAD l000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF 2N7323D, 2N7323R 2N7323H FRF9150 -100V, O-254AA 1000K 3000K 1-800-4-HARRIS