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    LT-15V

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 HIGH P O W E R S W I T C H I N G A P P L I C A TIO NS. Unit M O T O R C O N TR OL A P P L I C ATI ONS . . High Input in m m 0 3 .2 ± O .2 15.9 MAX Impedance . High Speed : t f = 0 . 35lis Max.


    OCR Scan     		PDF GT25J101 35lis 5000i LT-15V

    Untitled

    Abstract: No abstract text available
    Text: ELPAQ EMS512K8E 20 - 35ns A division o f ELMO Semiconductor Corp. 4Mb CMOS STATIC SRAM FEATURES 32 Pin Configuration • High density SRAM module - Organized as 524,288 x 8 ■ Access time 20 - 35ns ■ Low power consumption A l* e 3 A12 e 4 c c c c c c [I


    OCR Scan     		PDF EMS512K8E 700mW 35liS