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    Kyocera AVX Components CWR09FC335KMB

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    Vishay Intertechnologies CWR06MH335KMB

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    Teledyne e2v QP7C271-35KMB

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    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    0148-t

    Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
    Text: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)


    OCR Scan     		PDF 7C148) 25-ns 0GQb411 CY7C148 CY7C149 CY7C149-45KMB CY7C149â 45LMB 0148-t CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350

    K73 Package

    Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
    Text: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when


    OCR Scan     		PDF CY7C164A CY7C166A 384x4 CY7C166A 35DMB CY7C166Aâ 35KMB CY7C166A-35LMB K73 Package 3 phase inverter schematic diagram 7C166 CI64A CY7C164A-45DMB

    7C168A

    Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
    Text: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C169A) 7C168) 2001Velectrostatic CY7C168A CY7C169A CY7CI68Ahas CY7C169A-45FMB 7C168A 7C168 CY7C168A-25LMB

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


    OCR Scan     		PDF 300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q

    Untitled

    Abstract: No abstract text available
    Text: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR 1024x4 Static RAM Functional Description • Automatic power-down when d ese­ lected 7C148 TheC Y 7C 148 a n d CY 7C149 arehigh-perform ance C M O S static R A M s organized as 1024 by 4 bits. Easy m em ory expansion


    OCR Scan     		PDF CY7C148 CY7C149 1024x4 7C148) 7C149 7C148 25-ns tACSlI14'

    Untitled

    Abstract: No abstract text available
    Text: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM


    OCR Scan     		PDF CY7C191 CY7C192 7C191) 7C192

    33AO

    Abstract: No abstract text available
    Text: ss CY7C170A B>'ss c y p r e s s SEMICONDUCTOR — 4096 x 4 Static RAV RAM Features Functional Description • CMOS for optimum speed/power The CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is provided by an active LOW chip select


    OCR Scan     		PDF CY7C170A CY7C170A chi170A 20KMB CY7C170A-- CY7C170A-25VC 25DMB CY7C170A-25KMB 33AO

    7c169A

    Abstract: No abstract text available
    Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C169A) 7C168) 7C168 7c169A

    Untitled

    Abstract: No abstract text available
    Text: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7CI48 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 605 mW (military) Low standby power (7C148) — 82.5 mW (25-ns version)


    OCR Scan     		PDF CY7C148 CY7C149 7CI48) 25-ns 7C148)

    CY7C128A

    Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
    Text: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048


    OCR Scan     		PDF QQ0h332 CY7C128A CY7C128A consA-55DC CY7C128Aâ 55DMB 55LMB 7C128 CY7C128A-45DMB CY7C128A-55DMB

    46E SMD CODE

    Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
    Text: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C271 CY7C274 768-word T-46-13-29 46E SMD CODE 7C271 7C274 C2716 RAAW

    Untitled

    Abstract: No abstract text available
    Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C168) 7C168

    Untitled

    Abstract: No abstract text available
    Text: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­


    OCR Scan     		PDF CY7C164A CY7C166A CY7C164A CY7C166A 7C166A) CY7C164Aâ 35LMB CY7C166Aâ 20LMB

    245a

    Abstract: ZCC2 CY7C L 245A
    Text: CY7C245A CYPRESS SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns max set-up • 5V ±10% VCo commercial and military • T T L -com patible I/O • Direct replacement for bipolar PR O M s


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-m 24-pin 7C245A --35LM 35KMB --25LM 245a ZCC2 CY7C L 245A

    Untitled

    Abstract: No abstract text available
    Text: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A CY7C292Aâ 35DMB CY7C293Aâ

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
    Text: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin CY7C245A progra8735 CY7C245Aâ 25LMB CERAMIC LEADLESS CHIP CARRIER la crosse technology smd UJ 99 7C245A 0G152

    7c198

    Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
    Text: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac­


    OCR Scan     		PDF CY7C198 CY7C199 CY7C198 7c198 CY7C198-55DMB 19835 CY7C198-15DMB

    7C245A

    Abstract: CY7C245A 02KX CY7C245A-25QMB CY7C245A-45SC CY7C245AL-35WC 2K EPROM 7C245AL-25
    Text: CY7C245A 5ZSSBS' a CYPRESS .- .-. r £ S * ^ SEMICONDUCTOR Reprogrammable 2K x 8 Registered PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns max set-up • 5V ± 10% Vcc> commercial and


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin 35LMB CY7C245Aâ 35KMB 35DMB 7C245A CY7C245A 02KX CY7C245A-25QMB CY7C245A-45SC CY7C245AL-35WC 2K EPROM 7C245AL-25

    7C271

    Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
    Text: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C274 768-word 7C271/7C274 CY7C271 7C271 CY7C271-45WMB 333Q C271 7C274 CY7C274-55WC 57C27-1 7C271-55

    CY10E301

    Abstract: 7C245A CY7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board
    Text: CYPRESS SEMI CONDUCTOR bSE J> 2Sf i ^t . bS 0010171 7bE CY7C245A r^ Y p p irc c ; Reprogrammable 2K x 8 Registered PROM SEMICONDUCTOR • SV ±10% V cci commercial and military Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin 2048-OR T-90-20 CY10E301 7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board

    CY7CI99-55KMB

    Abstract: 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 CY7C198 CY7C199 cy7c199-25vc
    Text: CY7C198 CY7C199 CYPRESS -= s SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power ■ High speed — 25 ns • h ow active power The CY7C198 and CY7C199 are highperformance CMOS static RAM s orga­


    OCR Scan     		PDF CY7C198 CY7C199 300-mil-widD22 CY7C199â CY7CI99-55KMB 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 cy7c199-25vc

    CY7C291A

    Abstract: CY7C292A CY7C293A 57C29
    Text: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A 300-mil 7C291A, 7C293A) CY7C292A 57C29

    C1985

    Abstract: No abstract text available
    Text: CY7C198 CY7C199 CYPRESS W SEMICONDUCTOR F unctional D escription Automatic power-down when deselected CMOS for optimum speed/power High speed — 25 os Low active power — 880 mW Low standby power — 220 raW TTL-compatible inputs and outputs Capable o f w ithstanding greater than


    OCR Scan     		PDF CY7C198 CY7C199 C1985