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    MG50J6ES1

    Abstract: 35fj FL300
    Text: MG50J6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Electrodes are Isolated from Case . 6 IGBTs are Built Into 1 Package. . Enhancement-Mode . Low Saturation Voltage : VCE sat =4.0V(Max.) . High Speed : tf=0. 35fJs(Max.)


    OCR Scan     		PDF MG50J6ES1 35fJs 25jUs MG50J6ES1 35fj FL300

    LTSG

    Abstract: gt15j101
    Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH GT15J101 POWER SWITCHING APPLICATIONS. U n it in nun MOTOR CONTROL A P PL IC AT IO NS. High In p u t Impedance High Speed Low S a t u r a t i o n V oltag e Enhancement-Mode 1 5 .9 MAX . 0 3 .2 ± 0 .2


    OCR Scan     		PDF GT15J101 35fjs LTSG gt15j101