35F0121 Search Results

35F0121

Abstract: 35F0121-1SR-10 STEWARD 35F0121
Contextual Info: 35F0121-1SR-10 Pb Ω Ω 120 UNCONTROLLED DOCUMENT Ω 100 0amp 80 1amp 2amp 60 3amp 4amp 40 5amp 20 1 10 100 1000 120 Ω 100 80 Z 60 R 40 XL 20 1 10 Z 100 R 1000 10000 XL Steward

35F0121-0SR-10

Abstract: packaging tape reel
Contextual Info: Laird Technologies Web site: www.LairdTech.com Item # 35F0121-0SR-10, Chip Beads - Power Filtering Chip Beads - Power Filtering Laird Technologies offers the highest current chip beads in the industry going up to 10 amps in a compact surface mount chip bead. These beads provide excellent

25F0121-0SR

Abstract: phillips PM2811 28F0121 28F0121-0SR 25F0121-1SR STEWARD 35F0121 TME 57
Contextual Info: EMI-Hi Current SMT Bead Table Single Line Surface Mount Chokes Mounting: SMT Ambient Temperature Range: -55 ° C to +125 ° C Mode: Differential Typical Impedance z ohms Part No. Package Size Mounting 25F0121-1SR 0121 SMT 28F0121-1SR 0121 SMT 35F0121-1SR

Contextual Info: PH YSIC AL DIMENSIONS: A 3.05 [.120] ± B ± 0.08 [.003] 2.54 [.100] 35F0121-1SR-10 0.08 [.003] Bi 3.05 [.120] E L E C T R IC A L C H A R A C T E R IST IC S: C 8.51 [.335] ± 0.23 [.009] Ci 9.53 [.375] + MAX WIRE DIMENSIONS: Ti 1.27 [.050] T2 1.52 [.060] REF.

35F0121

Contextual Info: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3 .0 5 [.1 2 0 ] ± 0 .0 8 [.0 0 3 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] ± C - 4 .0 6 Ci 5 . 0 8 [.1 6 0 ] E L E C T R IC A L C H A R A C T E R IS T IC S : z MAX 0 .1 0 [ . 0 0 4 ] N o m in a l

35F0121-0SR-10

Abstract: STEWARD 35F0121
Contextual Info: 35F0121-0SR-10 UNCONTROLLED DOCUMENT Pb Ω Ω 60 Ω 50 40 0amp 1amp 2amp 30 3amp 4amp 20 5amp 10 1 10 100 1000 60 Ω 50 40 30 Z 20 R XL 10 1 10 Z 100 R 1000 10000 X L Steward

35F0121-1SR-10

Contextual Info: PH YSIC AL DIMENSIONS: A 3.05 [.120] ± B ± 0.08 [.003] 2.54 [.100] 35F0121-1SR-10 0.08 [.003] Bi 3.05 [.120] E L E C T R IC A L C H A R A C T E R IST IC S: C 8.51 [.335] ± 0.23 [.009] Ci 9.53 [.375] + MAX WIRE DIMENSIONS: Ti 1.27 [.050] T2 1.52 [.060] REF.

35F0121-OSR-10

Abstract: 35F0121 CART121 35F0121-0SR-10 CART-1
Contextual Info: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3.05 [.1 2 0 ] ± 0.08 [.0 0 3 ] B 2.54 [.1 0 0 ] ± 0.08 [.0 0 3 ] Bi 3.05 [.1 2 0 ] ELECTRICAL CHARACTERISTICS: MAX z C 4.06 [.1 6 0 ] Î 0.10 [.0 0 4 ] Ci 5.08 [.2 0 0 ] + WIRE DIMENSIONS: Ti 1.27 [.0 5 0 ] T2 1.52 [.0 6 0 ]

CART121-03

Contextual Info: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3 .0 5 [.1 2 0 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] + MAX C + ELECTRICAL CHARACTERISTICS: z 4 .0 6 [.1 6 0 ] - 0 .1 0 [ . 0 0 4 ] Ci 5 . 0 8 [.2 0 0 ] - MAX N om inal M in im u m

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RF3928 RF3928 280W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RFHA1020 RFHA1020 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

rfha1020

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation