CS 213 Polymer protection
Abstract: No abstract text available
Text: 19-3583; Rev 0; 2/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low
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MAX5060/MAX5061
MAX5060)
MAX5060/MAX5061
CS 213 Polymer protection
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TQFN28
Abstract: No abstract text available
Text: 19-3583; Rev 1; 6/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low
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MAX5060/MAX5061
MAX5060)
MAX5060/MAX5061
TQFN28
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FZ 75 capacitor 1500 6.3V
Abstract: FZ 87 1500 6.3V MAX5060ATI MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE
Text: 19-3583; Rev 2; 7/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low
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MAX5060/MAX5061
MAX5060)
MAX5060/MAX5061
FZ 75 capacitor 1500 6.3V
FZ 87 1500 6.3V
MAX5060ATI
MAX5060ETI
MAX5061
MAX5061AUE
MAX5061EUE
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TQFN28
Abstract: No abstract text available
Text: 19-3583; Rev 2; 7/05 KIT ATION EVALU E L B A IL AVA 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low
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MAX5060/MAX5061
MAX5060)
MAX5060/MAX5061
TQFN28
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PDF
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MAX5060ATI
Abstract: MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE
Text: 19-3583; Rev 2; 7/05 KIT ATION EVALU E L B A IL AVA 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low
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Original
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MAX5060/MAX5061
MAX5060)
MAX5060/MAX5061
MAX5060ATI
MAX5060ETI
MAX5061
MAX5061AUE
MAX5061EUE
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power supply in ic 7915 circuit diagram
Abstract: 0804HS OC205 pin configuration 7915 metal package 7915 7BAS
Text: BURR-BROtüN CÔRP HE D |l7 3 1 3 b S DD13ÔÔ1 1 3583 B U R R - B R O W N j 3 E 3 | El 3583 | E I FEA T U R ES APPLICATIO N S • HIGH OUTPUT SW INGS. Up to ;I 4 0 V • PROGRAMMABLE POWER S U P P LY OUTPUT AM PLIFIER • LARGE LOAD CURREN TS. -75m A • PROTECTED OUTPUT STAGE. Automatic Therm al Shutofl
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0804HS
0805HS
-150V)
power supply in ic 7915 circuit diagram
OC205
pin configuration 7915
metal package 7915
7BAS
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PDF
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Untitled
Abstract: No abstract text available
Text: WSÈ 3583 FEATURES APPLICATIONS • HIGH OUTPUT SWINGS. Up to -140V • PROGRAMMABLE POWER SUPPLY OUTPUT AMPLIFIER • LARGE LOAD CURRENTS. -75mA • PROTECTED OUTPUT STAGE. Automatic Thermal Shutoff OPERATIONAL AMPLIFIERS High Voltage - High Current O P E R A T IO N A L A M P LIF IE R
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-140V
-75mA
0804H
0805H
0803M
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2N3584
Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension
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CB-72
2N3584
2n4240
2n 6021
SCHEMA
2N3583
3584
TCA 321
2n3585
3583
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2n4240
Abstract: 2N3585 MOTOROLA
Text: M OTOROLA SC XSTRS/R F 15E D I GGäMMbS T | NPN 2N3583 thru 2N3585 2N4240 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6420 thru 2N6422 1.0 AND 2.0 AMPERE COMPLEMENTARY MEDIUM POWER HIGH VOLTAGE POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON 2 5 0 -5 0 0 V O L T S
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2N3583
2N3585
2N4240
2N6420
2N6422
2n4240
2N3585 MOTOROLA
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2N3534
Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN
Text: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)
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2N3583
2N3584
2N3585
2N3503
2N3585
2N3S84
2N358S
2N35S3
2N3534
2N3533
2N3563
N3584
2N3584 NPN
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LTLS
Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs
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2N5415
2N5416
CB-19
LTLS
2n2891
2N 3055
BDX 78
BDY71
2n3738
2n3055
2n3053
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TG 2309
Abstract: 2N4240 TRANSISTOR BDX 538 2N35842N35852N4240 2N3585 TEXAS 2N3583 bdx 32 1N914 2N3583 2N3584
Text: T Y P E S 2N3583. 2N 3 5 8 4. 2N3585. 2N4240 N -P -N S I L I C O N P O W E R T R A N S IS TO R S HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILITA R Y APPLICATIONS • Min V b R CEO of 300 V (2N3585, 2N4240) • Typ VcE(sat) of 0.25 V at Iß = 125 mA, lc = 1 A
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2N3583.
2N3584.
2N3585,
2N4240
2N4240)
2N3583
2N3584
TG 2309
TRANSISTOR BDX 538
2N35842N35852N4240
2N3585
TEXAS 2N3583
bdx 32
1N914
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BDX 241
Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide
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T0-220AB
O-220AB
5-40V
BD710
CB-19
BDX 241
BD 35 transistor
3055 transistor
TRANSISTOR BDX
transistor 3055
transistor BUx 49
transistor BD 140
TRANSISTOR BDX 14
transistor 2N 3055
transistor bd 905
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2N3439 COMPLEMENTARY
Abstract: 2N3440 COMPLEMENTARY 40346 D44VH D45VH D45VH1 D45VH10 D45VH4 D45VH7 D45VM1
Text: THOnSON/ DISTRIBUTOR SÛE D m TD5t,ñ73 □0DS75B ^53 • TCSK Bipolar Power Transistors High-Speed Switching Continued •>FE T y p e No. v C E O (s u s > V C E X (SUS) V V D 45V H F A M IL Y ( p - n - p ) D45VH1 D45VH4 D45VH7 D45VH10 -3 0 -4 5 -6 0 -8 0
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D45VH
D44VH
D45VH1
D45VH4
O-220AB
D45VH7
D45VH10
D45VM
D45VM1
D45VM4
2N3439 COMPLEMENTARY
2N3440 COMPLEMENTARY
40346
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J585
Abstract: BUX38 transistor ESM 30 BU104 BU 103 A eb117 transistor BU 109 BUX20 bux65 ESM18
Text: TO 66 CB 72 TO 3 (CB19) C B 183 T O 220 (CB 117) Power transistors N PN « Triple diffused » Fast switching Transistors de puissance N PN « Tripie diffusés » Commutation rapide T ype Case Boîtier Ptot (W) #VC EX VcEO (V) *C (A) h21 E / 'C min max (A)
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TPu76
J585
BUX38
transistor ESM 30
BU104
BU 103 A
eb117
transistor BU 109
BUX20
bux65
ESM18
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PDF
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BDX32
Abstract: bdx 540 2N3440 BUY71 2N 3585 TRANSISTOR BDX 538 crt 1700
Text: BDX32 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T . S C A N N IN G ► V C E X fating 1700 V • Current Rating — 4 Amps Continuous — 5 Amps Peak » Fast Switching — t f at 3.5 Amps 0.7 Microsecond Typical mechanical specification
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BDX32
BDX32
bdx 540
2N3440
BUY71
2N 3585
TRANSISTOR BDX 538
crt 1700
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TRANSISTOR BDX 538
Abstract: BDX31 BUY71 BDX 538 2N3440 transistor tip 31 tip 40 power transistor BDX32 bdx 32 TIP 50 transistor
Text: BDX31 NPN SILICON POWER TRANSISTOR • Designed for High Voltage C .R .T. Scanning • • V c e x Rating 2 2 0 0 V Current Rating — 4 Amps Continuous — 5 Amps Peak • Fast Switching — tf at 3.5 Amps 0.7 Microsecond Typical absolute maximum ratings a t 25 °C ambient temperature
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BDX31
TRANSISTOR BDX 538
BDX31
BUY71
BDX 538
2N3440
transistor tip 31
tip 40 power transistor
BDX32
bdx 32
TIP 50 transistor
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tt 2194
Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs
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2N5415
2N5416
tt 2194
LTLS
2n3054
2N2243
aa2n
BUX54
2N2192
2N2195
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PDF
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2N3583
Abstract: 2N4240 2N36 2N35
Text: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits
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2N3583
2N3584*
2N3585*
2N4240
100-percent
2N3583,
2N4240
2N36
2N35
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PDF
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Motorola transistors MJE3055
Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •
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MJE2955
MJE3055
1Ol50Â
MJD6036
MJD3039
Motorola transistors MJE3055
Motorola transistors MJE2955
IC TC 3588
MJE2955 power amplifier circuit
mje3055
transistor MJE3055
1N5825
MJD2955
30 amp npn transistor
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PDF
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FX1115
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.
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BLX68
OT-48/3.
7Z61766
7Z61769
bb53131
FX1115
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PDF
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TLP534
Abstract: TIP540 TIP531 TIP534 BDX32 BUY71 tip 1050 tip632 2N3440 TIP532
Text: TYPES TIP531 THRU TIP534 N-P-N SILICON POWER TRANSISTORS FOR POWER AMPLIFIER AND HtGH-SPEED-SWITCHING APPLICATIONS • 300 V and 400 V Min V BR CEO • 15-A Rated Continuous Collector Current 150 Watts at 100°C Case Temperature Min fT of 50 MHz at 10 V, 1 A
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TIP531
TIP534
TIP531,
TIP532
TIPS33,
TIP534
TLP534
TIP540
BDX32
BUY71
tip 1050
tip632
2N3440
TIP532
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PDF
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rca 2N4240
Abstract: 2n3565 equivalent transistor 2N3585 2N3565 2N4240 2N3583 equivalent RCA-2N3583 2N3584 2n3584 GE 2N3583-2N3585
Text: DI D E | 3 û ? 5 Qfll 0 0 1 7 1 5 A b 3875081 G E SOLID STATE H ig h -V o ltag e r o w e r transistore 01E 17158 _ D 2N3583-2N3585, 2N4240 T- 3 ? - K. File Number 138 High-Voltage Silicon N-P-N Transistors For H igh-Speed Switching and Linear-Am plifier Applications
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01715A
2N3583-2N3585,
2N4240
RCA-2N3583Â
2N3584Â
2N3585Â
2N4240Â
92CS-IÂ
75ffl
2N3583
rca 2N4240
2n3565 equivalent transistor
2N3585
2N3565
2N4240
2N3583 equivalent
RCA-2N3583
2N3584
2n3584 GE
2N3583-2N3585
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PDF
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BLX68
Abstract: FX1115 TRANSISTOR D 1785 philips choke ferrite Transistor d12 t transistor rf vhf L7550
Text: N AMER P H I L I P S / D I S C R E T E 86D _0 b ^ 01778 d • ^53131 001401b ~ r ^ y ^ r ô JL BLX68 U.H.F./V.H.F. POWER TRANSISTOR a suppISy voItage of* 1*3 8 ^ ^ ° la$S B ^ ° operated mobile' industrial and military transmitters with It has a capstan envelope with a moulded cap. All leads are Isolated from the stud.
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001401b
BLX68
BLX68
FX1115
TRANSISTOR D 1785
philips choke ferrite
Transistor d12 t
transistor rf vhf
L7550
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