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    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX
    Text: iPEM 1.2 Gb SDRAM-DDR AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72PBG

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps M72-8/XT AS4DDR16M72-10/XT 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX E1-E16

    Untitled

    Abstract: No abstract text available
    Text: iPEM 1.2 Gb SDRAM-DDR AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps 219-PBGA AS4DDR16M72PBG

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX

    ddr2 ram

    Abstract: lpddr DDR1 FCRAM ddr1 ram 256Mb ddr1 ram data sheet DDR2 x32 ed 012GL 2008 ED 08
    Text: Competitive RAM vs. FCRAM Feature [ Feature Comparison between Competitive RAM and FCRAM ] Memory Type DDR2 DDR1 LPDDR 256Mbit FCRAM Bus I/O x16 x32 x32 x64 VDD/VDDQ 1.8V 2.5V 1.8V 1.8V Operating Frequency 400MHz (800Mbps) 200MHz (400Mbps) 166MHz (333Mbps)


    Original     		PDF 256Mbit 400MHz 800Mbps) 200MHz 400Mbps) 166MHz 333Mbps) 216MHz 432Mbps) 46GByte/s ddr2 ram lpddr DDR1 FCRAM ddr1 ram 256Mb ddr1 ram data sheet DDR2 x32 ed 012GL 2008 ED 08

    lpddr

    Abstract: FCRAM DDR2 x32 ddr1 ram 200806 256-MBIT
    Text: RAM’s Power Consumption Comparison #1 „ Power Consumption: FCRAM vs. Equivalent Memories example Conditions： 256M-bit, BL=8, R:W=1:1, 4-bank interleave, 2.6GByte/s Power Consumption (mW) z z z z DDR2: 2pcs, x16, 667Mbps, CL=12pF, ODT=50ohm DDR1: 2pcs, x32, 333Mbps, CL=12pF


    Original     		PDF 256M-bit, 667Mbps, 50ohm 333Mbps, 2008FUJITSU 800Mbps, lpddr FCRAM DDR2 x32 ddr1 ram 200806 256-MBIT

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72PBG

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA

    DM 321

    Abstract: DDR pinout AS4DDR32M72PBG
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72-75/XT AS4DDR32M72-8/XT AS4DDR32M72-10/XT 219-PBGA DM 321 DDR pinout AS4DDR32M72PBG

    AS4DDR32M72PBG

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible)


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72PBG

    AS4DDR32M72PBG

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 AS4DDR32M72PBG

    AS4DDR32M72PBG

    Abstract: Of83
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72PBG Of83

    H11M1

    Abstract: n1u3 SSTL25
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40 - 70% SPACE SAVINGS „ Reduced part count


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA H11M1 n1u3 SSTL25

    DDR266A

    Abstract: DDR333B EDD1232AABH-6B-E EDD1232AABH-7A-E
    Text: DATA SHEET 128M bits DDR SDRAM EDD1232AABH 4M words x 32 bits Features • Density: 128M bits • Organization  1M words × 32 bits × 4 banks • Package: 144-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Data rate: 333Mbps/266Mbps (max.)


    Original     		PDF EDD1232AABH 144-ball 333Mbps/266Mbps M01E0107 E0533E60 DDR266A DDR333B EDD1232AABH-6B-E EDD1232AABH-7A-E

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    TC58NVG2D4BFT00

    Abstract: TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D TC58DVG14B1FT00 SSTL18 th58nvg TMP86FS49UG
    Text: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2004年5月号 5 VOLUME 142 四日市工場で最先端の NAND型フラッシュメモリ製造棟の建設を開始 .4 今月の新製品情報 4ギガビットNAND型フラッシュメモリ .2


    Original     		PDF 03-3457-3405FAX. TC58NVG2D4BFT00/TH58NVG3D4BFT00 TC58DVG14B1FT00 TC58NVG2D4BFT00 TH58NVG3D4BFT00 600s/ TC58NVG2D4BFT00 TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D SSTL18 th58nvg TMP86FS49UG

    EBD52UD6ADSA-6B

    Abstract: DDR266A DDR266B DDR333B EBD52UD6ADSA EBD52UD6ADSA-7A EBD52UD6ADSA-7B EDD5116ADTA-6B
    Text: DATA SHEET 512MB DDR SDRAM SO-DIMM EBD52UD6ADSA 64M words x 64 bits, 2 Ranks Description Features The EBD52UD6ADSA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR SDRAM sealed in TSOP package. Read and


    Original     		PDF 512MB EBD52UD6ADSA EBD52UD6ADSA M01E0107 E0425E30 EBD52UD6ADSA-6B DDR266A DDR266B DDR333B EBD52UD6ADSA-7A EBD52UD6ADSA-7B EDD5116ADTA-6B

    DDR266A

    Abstract: DDR266B DDR333B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52UC8AKDA-7A EBD52UC8AKDA-7B
    Text: PRELIMINARY DATA SHEET 512MB DDR SDRAM SO DIMM EBD52UC8AKDA 64M words x 64 bits, 2 Ranks Description Features The EBD52UC8AKDA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 256M


    Original     		PDF 512MB EBD52UC8AKDA EBD52UC8AKDA M01E0107 E0367E20 DDR266A DDR266B DDR333B EBD52UC8AKDA-6B EBD52UC8AKDA-7A EBD52UC8AKDA-7B

    EDD2516AETA-5B-E

    Abstract: DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM EDD2516AETA 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II)  Lead-free (RoHS compliant) • Power supply:


    Original     		PDF EDD2516AETA 66-pin DDR400: DDR333, 400Mbps/333Mbps/266Mbps cycles/64ms M01E0107 E0859E20 EDD2516AETA-5B-E DDR333 DDR400 EDD2516AETA EDD2516AETA-5C-E EDD2516AETA-6B-E EDD2516AETA-7A-E

    DDR266A

    Abstract: DDR266B DDR333B EBD11UD8ADDA-6B EBD11UD8ADDA-7A EBD11UD8ADDA-7B E043-1
    Text: DATA SHEET 1GB DDR SDRAM SO-DIMM EBD11UD8ADDA 128M words x 64 bits, 2 Ranks Description Features The EBD11UD8ADDA is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR SDRAM sealed in TCP package. Read


    Original     		PDF EBD11UD8ADDA EBD11UD8ADDA M01E0107 E0431E20 DDR266A DDR266B DDR333B EBD11UD8ADDA-6B EBD11UD8ADDA-7A EBD11UD8ADDA-7B E043-1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM WTR Wide Temperature Range EDD2516AKTA-TI (16M words x 16 bits) EDD2516AKTA-LI (16M words × 16 bits) Description Pin Configurations The EDD2516AK is a 256M bits Double Data Rate (DDR) SDRAM organized as 4,194,304 words × 16 bits


    Original     		PDF EDD2516AKTA-TI EDD2516AKTA-LI EDD2516AK 66-pin M01E0107 E0435E20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104AB 128M words x 4 bits EDD5108AB (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR


    Original     		PDF EDD5104AB EDD5108AB EDD5104AB EDD5108AB M01E0107 E0237E10