2SC4459
Abstract: No abstract text available
Text: Ordering number:EN3330 NPN Triple Diffused Planar Silicon Transistor 2SC4459 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.
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EN3330
2SC4459
00V/10A
2039D
2SC4459]
2SC4459
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2SC4459
Abstract: ITR07037 ITR07038 ITR07039 ITR07040
Text: Ordering number:ENN3330 NPN Triple Diffused Planar Silicon Transistor 2SC4459 500V/10A Switching Regulator Applications Package Dimensions unit:mm 2039D [2SC4459] 16.0 3.4 5.6 3.1 22.0 2.0 21.0 4.0 2.8 2.0 1.0 2.0 20.4 • High breakdown voltage, high reliability.
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ENN3330
2SC4459
00V/10A
2039D
2SC4459]
2SC4459
ITR07037
ITR07038
ITR07039
ITR07040
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PDF
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ZTX958
Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo
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ZTX958
-500mA,
-10mA,
-50mA
-100V
-100mA,
50MHz
ZTX958
TO-1 amps pnp transistor
transistor 3330
DSA003780
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line
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ZTX958
100ms
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PDF
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Compact FUSION Brochure
Abstract: No abstract text available
Text: Line B COMPACT FUSION SCR POWER CONTROLLERS 1 Compact FUSION Brochure Rev 3.50 www.ccipower.com 1-800-765-2799 Control Concepts Inc., 2013 FEATURES Auto-Ranging Input Voltage 24 - 600 VAC, 45 - 65 Hz AC Output 10 - 160 Amps Internal Class-T Fusing Blown Fuse Indicator
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RS-485)
SMAFUSION-RD25)
Compact FUSION Brochure
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PDF
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CD4511BE BCD to 7 SEGMENT DECODER
Abstract: code marking ti map CMOS BCD-to-7-Segment LED Latch Decoder Drivers cd4511b
Text: Data sheet acquired from Harris Semiconductor SCHS072B – Revised July 2003 Lamp Test LT , Blanking (BL), and Latch Enable or Strobe inputs are provided to test the display, shut off or intensity-modulate it, and store or strobe a BCD code, respectively.
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SCHS072B
CD4511B
16-lead
MC14511.
ADDENDscdd003a
scyd013
sdyu001x
CD4511BE BCD to 7 SEGMENT DECODER
code marking ti map
CMOS BCD-to-7-Segment LED Latch Decoder Drivers
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PDF
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Untitled
Abstract: No abstract text available
Text: CM450DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD S-Series Module 450 Amperes/1200 Volts A D L (4 PLACES) K K K V G C2E1 G2 E2 C1 E2 B E H N J E1 G1 M (3 PLACES) F G Q P P X Z F Y U Q V
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CM450DY-24S
Amperes/1200
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PDF
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Q81 tempco resistor
Abstract: dioda zener 24v On Chip Systems 3335 Pole/Q81 tempco resistor
Text: 25E D • ¿ 7* 1 04 5 7 QQ0 0 2 b 7 =1 ■ Dual Voltage Controlled Amplifier The CEM 3330 and CEM 3335 art dual, high performance, voltage controlled amplifiers intended for electronic musical instrument and professional audio application!. For thé 3330, each amplifier includes
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00002b7
Q81 tempco resistor
dioda zener 24v
On Chip Systems
3335
Pole/Q81 tempco resistor
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PDF
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ntc20
Abstract: 2SC4459
Text: O rdering n u m b e r:EN 3330 ._ 2SC4459 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F e a tu re s • High breakdown voltage, high reliability • F ast switching speed • Wide ASO • Adoption of MBIT process • Micaless package facilitating mounting
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2SC4459
ntc20
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PDF
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P1086
Abstract: No abstract text available
Text: 9-97 F 10 Small Outline Surface Mount Package Devices P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type VGS(OFF) I gss bvgss Max Min @IG (V) (mA) (nA) @Vgs (V) Min toss Conditions lim its Max Vos Id Min Max @VDS (nA) (mA) (mA) (V) (V) (V) (V)
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SMPJ177
Abstract: SMP3330 PJ99 P1086
Text: 8-94 F 10 Small Outline Surface Mount Package Devices P-C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) • g ss bvg ss Limits Min (V) m Max @Vgs Min (nA) (V) (V) @IG Id s s Conditions Max Vds b Min Max @VDS (V) (V) (nA)
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ztx958
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 IS S U E 3 - J U N E 94 FEATURES * * * * * - 0.5 A m p continuous current U p to 1.5 A m p s peak current Very low saturation voltage Excellent gain characteristics up to 1 A m p
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ZTX958
-500mA,
-10mA,
-100mA,
50MHz
-50mA
300iis.
ztx958
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PDF
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8D438
Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Text: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary
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b3b7E54
BD434,
BD436
BD438,
BD440
BD442
BD433/435/437/439/441.
8D438
8D442
8D436
D442
SD436
TRANSISTOR BD 437
BD transistor
BD 35 transistor
BD434
BD436 MOTOROLA
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSU E 3 - J U N E 94_ — FEATURES * 0.5 Am p continuous current * Up to 1.5 A m ps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp
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ZTX958
0Q1Q354
001G35S
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PDF
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IC-3330
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1523 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION
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uPA1523
//uPA1523
/iuPA1523H
10-Pinthers.
IC-3330
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PDF
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RFH12N35
Abstract: RFH12N40 RFH12N
Text: Standard Power MOSFETs RFH12N35, RFH12N40 File N u m be r 1630 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 12 A, 3 5 0 V - 4 0 0 V fusioni = 0 .3 8 f i Features: • • ■ ■ • » SOA is power-dissipation lim ited
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RFH12N35,
RFH12N40
RFH12N35
RFH12N40*
92CS-3723A
AN-7254
AN-7260.
92CS-37236
RFH12N40
RFH12N
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PDF
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VDMOS DEVICE
Abstract: No abstract text available
Text: S G S -T H O M S O N itLKSTTMIiÎODÊS TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech nology represents the final evolution of the deve lopment of a process to obtain POWER MOS devices, started in SGS in 1977.
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S-8471
VDMOS DEVICE
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PDF
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Untitled
Abstract: No abstract text available
Text: Display Boards For Show & Tell Display boards make an excellent visual reference to show to your customers, suppliers and staff members. Everything you need is represented on 7"x8" display boards. Wall mount with velcro or use optional table top stands. Order individually or the complete Set of 4.
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CKR03
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PDF
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VDMOS
Abstract: VDMOS DEVICE
Text: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech nology represents the final evolution of the deve lopment of a process to obtain POWER MOS
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S-8471
VDMOS
VDMOS DEVICE
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PDF
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TRANSISTOR A30
Abstract: A30 TRANSISTOR Intel 8237A
Text: GFI2370A GFI2370A GFI2370A DMA CONTROLLER GENERAL DESCRIPTION : THE GFI2370A IS COMPATIBLE IN FUNCTIONALITY WITH THE INTEL 8237A 4-CHANNEL PROGRAMMABLE DMA CONTROLLER. THE PERFORMANCE IS MUCH IMPROVED OVER THE STANDARD PART. FOR A DETAILED FUNCTIONAL DESCRIPTION, SEE THE INTEL DATA BOOK.
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GFI2370A
GFI2370A
LL7000
LSA2000
TRANSISTOR A30
A30 TRANSISTOR
Intel 8237A
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PDF
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TRANSISTOR bd 147
Abstract: BDW41 w44b BDW39 BDW40 800V PNP BDW48 LSE 0405 BDW44 BDW45
Text: MOTOROLA SC X S T R S /R F 7 ^ 3 3 -o *f MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA D ARLINGTON COMPLEMENTARY SILICO N POWER TRANSISTORS High DC Current Gain — hpg » 2500 typ. @ lc “ 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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BDW39/BDW44
BDW40/BDW45
BDW41/BDW46
BDW42/BDW47
BDW43/BDW48
T0-220AB
BDW39,
BDW40,
BDW41,
BDW42,
TRANSISTOR bd 147
BDW41
w44b
BDW39
BDW40
800V PNP
BDW48
LSE 0405
BDW44
BDW45
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F 12E D | fe.3b?2S4 GOÖbSMl 1 | M A X IM U M RATINGS Symbol Value U nit Collector-Emitter .Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc ic 1.6 Ade Rating Collector Current — Continuous Total Device Dissipation
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MD3467
MQ3467
MQ3467
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PDF
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UPA831TF
Abstract: NE856
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q1:NF = 1.4 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:NF = 1.2 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA
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UPA834TF
NE681,
NE856)
UPA834TF
NE68130
NE85630
UPA834TF-T1
831TF
UPA831TF
NE856
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PDF
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HA5160-5
Abstract: 5162-5 HA5162-5 ha-5162
Text: 3 h a -5160, HA-5162 Wideband, JFET Input High Slew Rate, Uncompensated, Operational Amplifiers March1993 Features Description • Wide Gain Bandwidth Ay £ 1 0 .100MHz • High Slew Rate. 120V/|is
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h1993
HA-5162
100MHz
280ns
HA-5160
100pF)
500ns/Div.
HA5160-5
5162-5
HA5162-5
ha-5162
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PDF
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