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    330039 Price and Stock

    JRH Electronics 71-433003-98T

    RECEPT CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 71-433003-98T 27 1
    • 1 $626.6
    • 10 $487.218
    • 100 $164.8364
    • 1000 $164.8364
    • 10000 $164.8364
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    JRH Electronics 71-433003-98E

    RECEPT CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 71-433003-98E 27 1
    • 1 $688.36
    • 10 $535.436
    • 100 $174.8546
    • 1000 $174.8546
    • 10000 $174.8546
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    JRH Electronics 71-433003-98R

    RECEPT CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 71-433003-98R 27 1
    • 1 $688.36
    • 10 $535.436
    • 100 $180.2
    • 1000 $180.2
    • 10000 $180.2
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    Amphenol SV Microwave 7033-0039

    CBL ASSY 1.85MM PLUG TO PLUG 24"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 7033-0039 Bag 24 1
    • 1 $344.3
    • 10 $319.05
    • 100 $307.57367
    • 1000 $307.57367
    • 10000 $307.57367
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    Newark 7033-0039 Bulk 10
    • 1 $454.53
    • 10 $454.53
    • 100 $365.89
    • 1000 $365.89
    • 10000 $365.89
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    Interstate Connecting Components 7033-0039
    • 1 -
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    Richardson RFPD 7033-0039 10
    • 1 -
    • 10 $297.19
    • 100 $239.23
    • 1000 $239.23
    • 10000 $239.23
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    Microchip Technology Inc MA330039

    DSPIC33CH128MP508 PLUG-IN MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MA330039 Bulk 4 1
    • 1 $39.98
    • 10 $39.98
    • 100 $39.98
    • 1000 $39.98
    • 10000 $39.98
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    Avnet Americas MA330039 Box 4
    • 1 $39.2
    • 10 $39.2
    • 100 $39.2
    • 1000 $39.2
    • 10000 $39.2
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    Mouser Electronics MA330039
    • 1 $39.2
    • 10 $39.2
    • 100 $39.2
    • 1000 $39.2
    • 10000 $39.2
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    Newark MA330039 Bulk 1
    • 1 $40.77
    • 10 $40.77
    • 100 $40.77
    • 1000 $40.77
    • 10000 $40.77
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    Microchip Technology Inc MA330039 39
    • 1 $39.2
    • 10 $39.2
    • 100 $39.2
    • 1000 $39.2
    • 10000 $39.2
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    TME MA330039 2 1
    • 1 $44.86
    • 10 $44.86
    • 100 $44.86
    • 1000 $44.86
    • 10000 $44.86
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    NAC MA330039 7
    • 1 $47.6
    • 10 $47.6
    • 100 $43.84
    • 1000 $40.63
    • 10000 $40.63
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    Richardson RFPD MA330039 4
    • 1 -
    • 10 $46.93
    • 100 $42.72
    • 1000 $42.72
    • 10000 $42.72
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    Avnet Silica MA330039 28 Weeks 1
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    Master Electronics MA330039
    • 1 $43.84
    • 10 $43.84
    • 100 $43.84
    • 1000 $43.84
    • 10000 $43.84
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    Find more 330039 price and stock on Findchips.com

    330039 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    Untitled

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Untitled

    Abstract: No abstract text available
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    0.1 uf Ceramic disc Capacitors 104

    Abstract: cd z5v cap .01 uf disc capacitor capacitor n75 K 3568 15000180 .22 uf disc capacitor capacitor 101 Y5F 104 Ceramic Disc Capacitors 224 Ceramic Disc Capacitors
    Text: PART NUMBERING SYSTEM CD - 1KO / 103 Z 0Z5V 1 E TR COMPUTER CODE TR = Tape/Reel TA = Tape/Ammo – = Bulk CERAMIC DISC MAX DIAMETER only if required RATED VOLTAGE NOMINAL CAPACITANCE STANDARD TOLERANCES V First two digits are F = ±1% OPERATING RANGE -012


    Original     		PDF 000pf N1500 500ppm) 0.1 uf Ceramic disc Capacitors 104 cd z5v cap .01 uf disc capacitor capacitor n75 K 3568 15000180 .22 uf disc capacitor capacitor 101 Y5F 104 Ceramic Disc Capacitors 224 Ceramic Disc Capacitors

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Disc Capacitors Part Number System CD12E103M50 -10TRIK 1 2 3 4 5 6 7 8 1. CD= Ceramic Disc 2. Diameter in millimeters 3. Temperature Coefficient Letter EIA Code Temperature Coefficient A NPO/COH 0 ± 60 ppm/°C SL SL +350/-1000 ppm/°C B Y5P ±10%


    Original     		PDF CD12E103M50 -10TRIK 470pFLead

    Tantalum

    Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 Tantalum CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060-TB s-parameter

    A 12-15 GHz High Gain Amplifier

    Abstract: HEADER RT
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT

    CGH35060

    Abstract: CGH35060F
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 10failure CGH35060

    syntron rectifier

    Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
    Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Molex.com RegisterLogin INDUSTRIESCONTACT USNEWS & EVENTSABOUT USINVESTORSCAREERS SEARCH Enter Part No. or Keyword Go


    Original     		PDF 33003901C12O

    744786022

    Abstract: 748323024 748421245 748422245 748420245 WE 748422245 748351124 74478 7483 speedy TRANSFORMER
    Text: WE Produktkatalog WE Group Page 1 of 2 EMC & Inductive Solutions EMC Ferrites Inductors RF Inductors LTCC Components Design Kits for RF Components To Product Overview Transformer Electromechanical Components RF Components Circuit Protection EMI Material and D-SUB Filters


    Original     		PDF

    10UF

    Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015S

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015S

    transistor 8772

    Abstract: Transistor C 4927 8772 transistor CGH35030F
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor

    transistor E 13007

    Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251
    Text: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 msl 9351 s-parameters cree marking information 00457 43251

    102 capacitor

    Abstract: CERAMIC DISK CAPACITOR ny2 capacitor t x5u capacitor 10kv 2200 CERAMIC DISK CAPACITOR marking z5p x1y1 RS-198-C X1000 CK8Y5P102KX1Y1
    Text: HIGH VOLTAGE CERAMIC DISK CAPACITORS - CK2 AND NY2 SERIES Introduction These ceramic capacitors use high dielectric constant K>1000 ferroelectric materials based on barium titanate. Key features of this capacitor class include its non-linear temperature


    Original     		PDF 3300Y5U 102 capacitor CERAMIC DISK CAPACITOR ny2 capacitor t x5u capacitor 10kv 2200 CERAMIC DISK CAPACITOR marking z5p x1y1 RS-198-C X1000 CK8Y5P102KX1Y1

    Untitled

    Abstract: No abstract text available
    Text: WiMAX Antenna W ire l ess S o l utions Innovative Technology for a Connected World World-Leading Solutions A Brief Introduction to WiMAX Laird Technologies’ world class engineering teams utilize proprietary, stateof-the-art design tools to create antenna products that maximize total system


    Original     		PDF J23014V00-120N J51016V00-90N JBXRK-01-TM5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506

    500WVDC

    Abstract: No abstract text available
    Text: HI-K. TYPE HIGH DIELECTRIC CONSTANT CLASS 2 100WVDC & UNDER pf DIAMETER TEMPERATURE CHARACTERISTIC Dø ± 1m/m Y5F Y5P Z5U Z5V 4 100-470 200-1000 1000-2700 1000-5000 5 500-680 1200-1500 3000-3900 5600-8200 6 820-1000 1800-2200 4000-5600 10000 8 1200-2700


    Original     		PDF 100WVDC 500WVDC 500WVDC

    Untitled

    Abstract: No abstract text available
    Text: C eram ic D isc C ap acito rs C lass II H igh D ielectric C onstant S p ecificatio n s Features • Operating temperature range: -25°C +85°C • Rated working voltage: 50VDC, 500VDC. • Capacitance: Within the tolerance at 1 KHz, 1 to 3V rms, 25°C. • Test voltage: 2.5 times the rated voltage


    OCR Scan     		PDF 50VDC, 500VDC. 000MQ 200MQpF, D51b0t 00014T1