33 DB AT 2 GHZ Search Results

33 DB AT 2 GHZ Result Highlights (5)

Part	Manufacturer	Description
DC753A	Analog Devices	LT5526EUF - 1MHz-2GHz Mixer
DC945A	Analog Devices	LT5572EUF - 2GHz I/Q Modulator
LTC5549IUDB#TRPBF	Analog Devices	2GHz to 14GHz Microwave Mixer
LTC5548IUDB#TRPBF	Analog Devices	2GHz to 14GHz Microwave Mixer
LTC5549IUDB#TRMPBF	Analog Devices	2GHz to 14GHz Microwave Mixer

33 DB AT 2 GHZ Price and Stock

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Fairview Microwave Inc SLNA-180-33-30-SMA 3 dB NF, 2 GHz to 18 GHz, Low Noise Broadband Amplifier with 15 dBm, 33 dB Gain and SMA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	SLNA-180-33-30-SMA					1 $2468.21 10 $2304.9 100 $2304.9 1000 $2304.9 10000 $2304.9	Buy Now
Fairview Microwave Inc SPA-265-33-01-K Medium Power GaAs Amplifier at 1 Watt P1dB Operating from 18 GHz to 26.5 GHz with 38 dBm IP3, 2.92mm Input, 2.92mm Output and 33 dB Gain
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	SPA-265-33-01-K					1 $4831.19 10 $4575.7 100 $4575.7 1000 $4575.7 10000 $4575.7	Buy Now

33 DB AT 2 GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FP750SOT343 Abstract: MIL-HDBK-263 Text: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS	Original	PDF	FP750SOT343 FP750SOT343 FP750 OT343 SC-70) surface-mou63. MIL-HDBK-263
SAV-541 Abstract: SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required	Original	PDF	45-6GHz ATF-54143 SAV-541+ MMM1362 2002/95/EC) SAV-541 SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A
TAV-541 Abstract: FG873 N4000A N8975A tav 541 Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required	Original	PDF	45-6GHz TAV-541+ FG873 2002/95/EC) TAV-541 FG873 N4000A N8975A tav 541
Untitled Abstract: No abstract text available Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required	Original	PDF	45-6GHz TAV-541+ FG873 2002/95/EC)
Untitled Abstract: No abstract text available Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required	Original	PDF	ATF-54143 45-6GHz SAV-541+ MMM1362 2002/95/EC)
gali-3 Abstract: Gali-6 GALI-52 marking code 4f amplifier DF782 Text: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali 1 21 2 33 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ.	Original	PDF
2SA1977 Abstract: NE68133 NE97733 S21E Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97733 NE68133 NE97733 2SA1977 2SA1977 NE68133 S21E
ic 741 free Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97733 NE68133 NE97733 2SA1977 NE97733-T1 24-Hour ic 741 free 2SA1977 NE68133 NE97733-T1 S21E iC 828 Transistor
2SA1978 Abstract: NE02133 NE97833 NE97833-T1B-A S21E Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 10 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97833 NE02133 NE97833 2SA1978 2SA1978 NE02133 NE97833-T1B-A S21E
221-166 Abstract: 2SA1978 NE02133 NE97833 NE97833-T1 S21E k 2445 transistor Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 10 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97833 NE02133 NE97833 2SA1978 NE97833-T1 24-Hour 221-166 2SA1978 NE02133 NE97833-T1 S21E k 2445 transistor
221-166 Abstract: 2SA1978 transistor marking T93 NE02133 NE97833 S21E ne02133 MARKING Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 10 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97833 NE02133 NE97833 2SA1978 24-Hour 221-166 2SA1978 transistor marking T93 NE02133 S21E ne02133 MARKING
Untitled Abstract: No abstract text available Text: ASL563 High Gain, Low Noise Amplifier Description Features  33 dB Gain at 900 MHz  1.0 dB NF at 900 MHz  Two-stage LNA  Two power supplies in Type 2 ASL563 is a two-stage LNA for GPS, GLONASS, Galileo, Compass, DMB, and satellite receiver low noise blocks. It has a low noise, high gain, and high	Original	PDF	ASL563 ASL563 OT363 OT363 100GHz 800GHz)
EMP-21 Abstract: EMP216 PAE1 Text: EMP216 6 - 18 GHz 2 Watt Power Amplifier MMIC FEATURES • • • 6 - 18 GHz Operating Frequency Range 33 dBm Output Power at 1dB Compression 20.0 dB Typical Small Signal Gain APPLICATIONS • • • Dimension: 5330um X 3080um Thickness: 85um ± 15um Point-to-point and point-to-multipoint radio	Original	PDF	EMP216 5330um 3080um 1250mA) EMP-21 EMP216 PAE1
ca 3118 Abstract: EMP216 Text: EMP216 6 - 18 GHz 2 Watt Power Amplifier MMIC FEATURES • • • 6 - 18 GHz Operating Frequency Range 33 dBm Output Power at 1dB Compression 20.0 dB Typical Small Signal Gain APPLICATIONS • • • Dimension: 5330um X 3080um Thickness: 85um ± 15um Point-to-point and point-to-multipoint radio	Original	PDF	EMP216 5330um 3080um 1250mA) ca 3118 EMP216

Untitled Abstract: No abstract text available Text: Wcinschel Model 33 dc to 8.5 GHz MEDIUM POWER FIXED COAXIAL ATTENUATOR 25 WATTS Type N Connectors F X PRESS 8 0 0 -5 4 2 -4 4 5 7 POWER COEFFICIENT: <0.002 dB/dB/watt TEMPERATURE COEFFICIENT: <0.0004 dB/dB/°C TEMPERATURE RANGE: -55 °C to 125 °C. CALIBRATION: Insertion loss test data supplied at dc,	OCR Scan	PDF	MIL-STD-348 MIL-C-39012 MIL-A-3933.
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE	OCR Scan	PDF	TIM1213-2 I213-2
Untitled Abstract: No abstract text available Text: TOSHIBA • 0 0 2 1 4 0 7 b33 H ^ J j POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TMD0507-2 TECHNICAL DATA Features^ ■ BROAD BAND INTERNALLY MATCHED ■ HIGH POWER PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HERMETICALLY SEALED PACKAGE ■ HIGH GAIN GldB= 22 dB at 5. 1 to 7. 2 GHz	OCR Scan	PDF	TMD0507-2 TMD0507 2-11E1A)
Untitled Abstract: No abstract text available Text: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 • Features• ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C	OCR Scan	PDF	TMD0507-2
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs MMIC S9751 PRELIMINARY Features • High power - Po = 33 dBm at Pin = 2 dBm • Super low distortion - Padj = -65 dBc at Po = 32 dBm, 600 kHz offset • High gain - Gp = 31 dB at Pin = 2 dBm • Input/output port matched to 5 0 ii	OCR Scan	PDF	S9751 MW20050196
Untitled Abstract: No abstract text available Text: TOSHIBA 1 C10CI7247 0 0 2 1 4 0 ^ 40b • POWER GaAs MM 1C MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features* ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 7.1 to 8. 5 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8.5 GHz	OCR Scan	PDF	C10CI7247 TMD0708-2 TMD0708-2 2-11E1A) TDT7247
TMD0708-2 Abstract: No abstract text available Text: POWER GaAs MMIC TMD0708-2 Features : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 7. 1 to 8. 5 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8. 5 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C CHARACTERISTICS SYMBOL RATINGS	OCR Scan	PDF	TMD0708-2 2-11e1a)
TMD0305-2 Abstract: No abstract text available Text: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR I TECHNICAL DATA TMD0305-2 Features * • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB— 33 dBm at 3. 4 to 5. 1 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 3. 4 to 5. 1 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C	OCR Scan	PDF	TMD0305-2 TMD0305t2 TMD0305-2
hmf-24 Abstract: No abstract text available Text: HARRIS 33 H NW S E M I C O N D U C T O R a r r is 4bE D • M B O S S b 11! 0 0 0 0 2 3 3 4 ■ H M F-24030 00 Power Optimized GaAs FET 2-10 GHz PRODUCT DATA Features < +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz • Chip Devices are Selected from	OCR Scan	PDF	F-24030 HMF-24030-200 HMF24000-200. 430EEbT D00053S HMF-24030-200 hmf-24
PHA1516 Abstract: No abstract text available Text: W an A M P co m pa n y Wireless Power Module, 2W 1.5-1.6 GHz PHA1516-2 Features • D e sig n e d for C ellu lar B ase Station A pplications • In p u t a n d O u tp u t M atched to 5 0 0 • Class AB: -33 dB c T y p 3rd IMD at 2 W atts PEP • T h erm ally T rack in g Bias D io d e In c lu d e d	OCR Scan	PDF	PHA1516-2 1600MHz PHA1516

33 DB AT 2 GHZ Search Results

33 DB AT 2 GHZ Result Highlights (5)

33 DB AT 2 GHZ Price and Stock

Fairview Microwave Inc SLNA-180-33-30-SMA

Fairview Microwave Inc SPA-265-33-01-K

33 DB AT 2 GHZ Datasheets Context Search

FP750SOT343

SAV-541

TAV-541

Untitled

Untitled

gali-3

2SA1977

ic 741 free

2SA1978

221-166

221-166

Untitled

EMP-21

ca 3118

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

TMD0708-2

TMD0305-2

hmf-24

PHA1516