Untitled
Abstract: No abstract text available
Text: 32P3H-F JEDEC Code – Weight g 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 Plastic 32pin 8✕20mm TSOP( ) HD e b2 D 1 32 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 16 c 17 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD
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32P3H-F
32-P-820-0
32pin
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tsop 17
Abstract: E1732
Text: E 17 32 D HD JEDEC Code – F Weight g 0.37 16 1 L L1 Detail F Lead Material Alloy 42 A EIAJ Package Code TSOP 32-P-820-0.50 A2 A1 e b y e b2 32P3H-F c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2
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32-P-820-0
32P3H-F
32pin
tsop 17
E1732
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32P3H- E
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-A Previous Code 32P3H-E MASS[Typ.] 0.4g HD 1 D *3 b p *2 32 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 17 S 16 F
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32-8x18
PTSA0032KA-A
32P3H-E
32P3H- E
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Untitled
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-B Previous Code 32P3H-F MASS[Typ.] 0.4g HD Index mark bp 32 D 1 *3 *2 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
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32-8x18
PTSA0032KA-B
32P3H-F
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Untitled
Abstract: No abstract text available
Text: E 16 1 EIAJ Package Code TSOP 32-P-820-0.50 D HD JEDEC Code – F Weight g 0.37 17 32 Lead Material Alloy 42 A 32P3H-E A2 A1 e Detail F b L L1 y e b2 c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2
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32-P-820-0
32P3H-E
32pin
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B17C
Abstract: 32P3H-E
Text: 32P3H-E Plastic 32pin 8✕20mm TSOP JEDEC Code – Weight(g) 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 HD e b2 D 32 1 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 17 c 16 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD
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32P3H-E
32pin
32-P-820-0
B17C
32P3H-E
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M5M51008BFP
Abstract: M5M51008BVP
Text: 1997-4/1 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Type name M5M51008BFP,VP,RV,KV,KR-70VL
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M5M51008BFP
-70VL
-10VL
-12VL
-15VL,
-70VLL
-10VLL
-12VLL
-15VLL-I
1048576-BIT
M5M51008BVP
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M5M5V108DFP
Abstract: M5M5V108DKV M5M5V108DVP
Text: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.
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M5M5V108DFP
-70HI
1048576-BIT
131072-WORD
M5M5V108DVP
32-pin
M5M5V108DKV
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A1245
Abstract: M5M51008BVP M5M51008BP
Text: 1997-3/25 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L
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M5M51008BP
-55LL
-70LL
-10LL
1048576-BIT
131072-WORD
KR-55L
KR-70L
A1245
M5M51008BVP
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SMD a16 Transistor
Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and
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M5M5V108CFP
-70HI,
-10HI,
-70XI,
-10XI
1048576-BIT
131072-WORD
M5M5V108CVP
SMD a16 Transistor
DQ7-21
MARK S2
smd transistor A8
M5M5V108CRV
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R1LP0108ESA-7SR
Abstract: No abstract text available
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0151EJ0100
072-word
32-pin
R1LP0108ESA-7SR
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Untitled
Abstract: No abstract text available
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0029EJ0300
072-word
32-pin
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432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P
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240K6X-A
240P6Y-A
240P6Z-A
255F7F
256F7B
256F7X-A/B
256P6J-E
256P6K-E
272F7X-A/B
281S8-C
432W6
48P4B
hssop
44P3W-R
28P0
5P5T
tsop 2-54
42P9R
70P3S-M
479F7G
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M5M51008CP
Abstract: M5M51008CRV M5M51008CVP
Text: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and
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M5M51008CP
1048576-BIT
131072-WORD
M5M51008CVP
32-pin
M5M51008CRV
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R1LP0108ESP
Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher
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R1LP0108E
R10DS0029EJ0200
072-word
32-pin
R1LP0108ESP
R1LP0108ESF
R1LP0108
R1LP0108ESP-7SI
R1LP0108ESF-7SR
R1LP0108ESP-7SR
R1LP0108es
r1lp0108esp-5si#s0
r1lp0108esp-7sr#b0
ttl 7202
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TI_BQ24721C_QFN_32P
Abstract: M5M51016 M5M51008BVP
Text: # Low power dissipation s ta tic RAMs Low voltage operation (Continued) Memory capacity Max. Memory Configuration Function mode time (nsS 120 Ice (Power down) = 10 p A (max) = 0.3 'utfine M5M51008BFP-12VLL 32P 2M -A M5M51008BVP-12VLL 32P3H-E M5M51008BR V -12VLL
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32P3H-E
32P3H
M5M51008BFP-12VLL
M5M51008BVP-12VLL
128Kx8
M5M51008BR
-12VLL
M5M51Q08BKP-
M5M51008BKH-12VLL
M5M510
TI_BQ24721C_QFN_32P
M5M51016
M5M51008BVP
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M5M51008AP
Abstract: RV-12L
Text: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD B Y 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 - bit which are
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M5M51008AP
RV-70L
-70LL
-85LL
-12LL
1048576-BIT(
131072-WQRD
M5M51008AP,
M5M51008AVP,
M5M51008AVP
RV-12L
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M5M5512FP-70LL
Abstract: SS12R 32P3H- E 1008BP-7QL
Text: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)
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M5MSS12P-45LL
M5M5512FP-45UL
5512VP-45LL
M5M5512RV-45LL
12KV-45LL
S512KR-45LL
M5M5512P-55U.
M5M5512VP-55LL
M5MS512RV-55UM5M55I2KV-55LL
12KR-5SLL
M5M5512FP-70LL
SS12R
32P3H- E
1008BP-7QL
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MSM5512
Abstract: MSM551 TI_BQ24721C_QFN_32P M5M5512 M5M5256DVP-8
Text: MEMORIES Low power dissipation static RAMs Low voltag e operation Memory capacity Memory Configuration Max. access Function mode Package Outline type No. time (n*) 70 Low voltage O peration (3.0 to 3.6V) Icc (Power down) = 10 ^ A (max) = 0 .0 5 // A (typ)
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M5M5256DFP-70VLL
M5M5256QVP-70VLL
M5M5256DRV-70VLL
M5M5256DFP-85VLL
M5M5256DVP-85VLL
M5M5256DRV-85VLL
M5M5256DFP-10VLL
M5M5256DVP-10VLL
M5M5Z560RV-10VLL
M5M5256DFP-12VLL
MSM5512
MSM551
TI_BQ24721C_QFN_32P
M5M5512
M5M5256DVP-8
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m5m51008afp
Abstract: m5m51008avp M5M51008AV
Text: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - b it which are fabricated using high-performance triple polysilicon CMOS
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M5M51008AFP
RV-85VL
-85VLL
1048576-BIT
131072-WORD
M5M51008AFP,
M5M51008AVP,
M5M51008AVP
M5M510oltage
m5m51008avp
M5M51008AV
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PP5V
Abstract: M5M28F101AFP 708-8034
Text: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M5M28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro
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1048576-BIT
131072-WQRD
M5M28F101A
1048576-bit
32pin
--A14
MD5-MEM-05-6/95-500
PP5V
M5M28F101AFP
708-8034
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Untitled
Abstract: No abstract text available
Text: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -tol-w, -85L-W, -10L-W, -12L-W, _ n.,nnrNn/araw -70LL-W, -85LL-W, -10LL-W, -12LL-W ip jB lU llö M /Ä W Y N o tic e T h is is n e t • Som e paramètre: limits are subject_ 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM
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M5M5V208FP
-85L-W,
-10L-W,
-12L-W,
-70LL-W
-85LL-W
-10LL-W
-12LL-W
2097152-BIT
262144-WORD
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m5m5v208
Abstract: AX8560 Kr85
Text: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -70L-W, -85L-W, - 10L-W, - 12 L-W, nnn,nAf5 W -70LL-W, -85LL-W, -10LL-W, -12LL-W Notice: This is not a final sP ^ ^ ° o c h ange. s o m e p a ra m e tric lim its are sud io c 2Q g71 g 2 B |J 2 g 2 1 44.WORD BY 8-BIT) CMOS STATIC RAM
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M5M5V208FP
-70L-W,
-85L-W,
10L-W,
-70LL-W,
-85LL-W,
-10LL-W,
-12LL-W
M5M5V208
152-bit
AX8560
Kr85
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131Q72-WORD BY8-BIT CM0S STATIC RAM DESCRIPTION The M5M51T08AP, FP, VP, RV are a 1048576- bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance quadruple-polysilicon
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M5M51T08AP
RV-55SL
1048576-BIT
131Q72-WORD
M5M51T08AP,
32-pin
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