IXGH32N50BU1
Abstract: IXGH32N50BU1S
Text: Preliminary Data Sheet IXGH32N50BU1 32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXGH32N50BU1
IXGH32N50BU1S
O-247
32N50BU1S)
IXGH32N50BU1
IXGH32N50BU1S
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet IXGH32N50BU1 32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM
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IXGH32N50BU1
IXGH32N50BU1S
O-247
32N50BU1S)
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MJI-25
Abstract: No abstract text available
Text: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2
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OCR Scan
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PDF
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IXGH32N50BU1
IXGH32N50BU1S
O-247
32N50BU1S)
MJI-25
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