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    IXGH32N50B

    Abstract: IXGH32N50BS
    Text: Preliminary Data Sheet IXGH32N50B VCES 32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V


    Original     		PDF IXGH32N50B IXGH32N50BS O-247 32N50BS) IXGH32N50B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS P re lim in a ry D ata S heet IXGH32N50B 32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES


    OCR Scan     		PDF IXGH32N50B IXGH32N50BS O-247 32N50BS)

    32N50

    Abstract: No abstract text available
    Text: n ix Y S IXGH 32N50B IXGH 32N50BS HiPerFAST IGBT v CES ^C25 ^ C E sa t tfi = = = = 500 V 60 A 2.0 V 80 ns 4C ¿) Ae Maximum Ratings Sym bol Test Conditions V CES Tj = 25°C to 150°C 500 V v CGR Tj = 25°C to 150°C; R OE = 1 M Q 500 V v GES v GEM Continuous


    OCR Scan     		PDF 32N50B 32N50BS O-247 32N50BS) B2-17 32N50