32N50 Search Results

32N50 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F61632N50FPV		Renesas Electronics Corporation	Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion), LQFP, /

32N50 Price and Stock

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Vishay Siliconix IRFP32N50KPBF MOSFET N-CH 500V 32A TO247-3
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DigiKey	IRFP32N50KPBF	Tube	293		1	1 $9.93 10 $9.93 100 $9.93 1000 $9.93 10000 $9.93	Buy Now
RS	IRFP32N50KPBF	Bulk			500	1 - 10 - 100 - 1000 $9.32 10000 $7.92	Get Quote
Littelfuse Inc IXFB132N50P3 MOSFET N-CH 500V 132A PLUS264
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DigiKey	IXFB132N50P3	Tube	275		1	1 $24.56 10 $24.56 100 $16.9512 1000 $16.9512 10000 $16.9512	Buy Now
RS	IXFB132N50P3	Bulk		8 Weeks	25	1 - 10 - 100 $26.22 1000 $26.22 10000 $26.22	Get Quote
Littelfuse Inc IXFN132N50P3 MOSFET N-CH 500V 112A SOT227B
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DigiKey	IXFN132N50P3	Tube	232		1	1 $42.23 10 $31.611 100 $42.23 1000 $42.23 10000 $42.23	Buy Now
RS	IXFN132N50P3	Bulk		8 Weeks	10	1 - 10 $44.77 100 $44.77 1000 $44.77 10000 $44.77	Get Quote
Infineon Technologies AG SPW32N50C3FKSA1 MOSFET N-CH 560V 32A TO247-3
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DigiKey	SPW32N50C3FKSA1	Tube	228		1	1 $9.86 10 $9.86 100 $5.838 1000 $4.69812 10000 $4.69812	Buy Now
Avnet Americas	SPW32N50C3FKSA1	Bulk		19 Weeks, 1 Days	1	1 $10.76 10 $9.72 100 $8.05 1000 $8.05 10000 $8.05	Buy Now
Newark	SPW32N50C3FKSA1	Bulk	2		1	1 $1.34 10 $1.34 100 $1.34 1000 $1.34 10000 $1.34	Buy Now
EBV Elektronik	SPW32N50C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFL132N50P3 MOSFET N-CH 500V 63A ISOPLUS264
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DigiKey	IXFL132N50P3	Tube	25		300	1 - 10 - 100 - 1000 $20.18763 10000 $20.18763	Buy Now
Newark	IXFL132N50P3	Bulk			300	1 - 10 - 100 - 1000 $21.16 10000 $21.16	Buy Now
RS	IXFL132N50P3	Bulk		8 Weeks	25	1 - 10 - 100 $31.22 1000 $31.22 10000 $31.22	Get Quote

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32N50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
32_N-50-0-1/133_NE		HUBER+SUHNER	32_N-50-0-1/133_NE		Original	PDF
32N50Q		IXYS	HiPerFET Power MOSFETs ISOPLUS247		Original	PDF

32N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
125OC Abstract: 32N50Q Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	32N50Q 32N50Q 125OC 125OC	PDF
32N50Q Abstract: 125OC Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A	Original	32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 32N50Q 125OC	PDF
IXFR32N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50	PDF
IXFR32N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50	PDF
30N50 Abstract: IXFR32N50 Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 125OC	PDF
td 4950 Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFX 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on = 500 V = 32 A = 0.15 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	32N50 td 4950	PDF
fast IXFX Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q	PDF
30N50 Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50 Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50	PDF
32N50Q Abstract: 4925 B transistor 125OC 30n50 728B1 Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C	Original	32N50Q 125OC reserves10 728B1 123B1 728B1 065B1 32N50Q 4925 B transistor 125OC 30n50	PDF
32n50 Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50 Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 125OC 32n50 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 32N50Q VDSS ID25 = 500 V = 30 A = 0.16 Ω = 250 ns RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	ISOPLUS247TM 32N50Q 125OC 728B1 123B1 728B1 065B1	PDF
td 4950 Abstract: 32N50 fast IXFX Text: HiPerFETTM Power MOSFET IXFX 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on = 500 V = 32 A = 0.15 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	32N50 PLUS247TM td 4950 32N50 fast IXFX	PDF
32n50 Abstract: ixfh 26 n 49 30N50 Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C	Original	30N50 32N50 O-247 32N50 ixfh 26 n 49	PDF

Untitled Abstract: No abstract text available Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,	Original	30N50Q 32N50Q 32N50 125OC	PDF
32N50 Abstract: 30n50 Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C	OCR Scan	30N50 32N50 32N50 5A/25 6A/25	PDF
Untitled Abstract: No abstract text available Text: n ixY S HiPerFAST IGBT IXGH 32N50B CES lC25 v CE sat % fi Symbol Maximum Ratings Test Conditions T a = 2 5 °C to 1 5 0 °C 500 V T j = 25° C to 150° C; R, . = 1 MU 500 V ’ GES Continuous +20 V V Transient +30 V GEM_ _ ^C2S T c = 2 5 °C 60 A ^C90	OCR Scan	32N50B O-247 t-150 32N50B 32N50BU1	PDF
Untitled Abstract: No abstract text available Text: DIXYS IXFJ 32N50Q v¥ DSS 500 V A — CO to HiPerFET Power MOSFETs — ^D cont R Q-Class DS(on) N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family tr r 0.15 ß < 250 ns — Preliminary data sheet Maximum Ratings Symbol Test Conditions	OCR Scan	32N50Q Cto150 T0-220	PDF
Untitled Abstract: No abstract text available Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 32N50Q IXFT 32N50Q trr < 250 ns V DSS Tj =25°Cto150°C 500 V Vocn Tj = 25° C to 150° C; RGS= 1 M n 500 V v G5 Continuous ±20 V vGSM Transient ±30 V ^D25 Tc =25°C Kn m Test C onditions	OCR Scan	32N50Q 32N50Q Cto150 O-247 O-268	PDF
32N50 Abstract: No abstract text available Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C	OCR Scan	32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50	PDF
30N50 Abstract: No abstract text available Text: □ IXYS X H H ifl JL æ* HiPerFET Power MOSFETs i x f h / ix f t SONSO IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol V v DGR VGSM L = 25°C to 150°C 25°C to 150°C; RGS = 1 M£i = 25°C = 25°C pulse width limited	OCR Scan	32N50 30N50 30N50	PDF
Untitled Abstract: No abstract text available Text: □ IXYS P re lim in a ry D ata S heet 32N50B 32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES	OCR Scan	IXGH32N50B IXGH32N50BS O-247 32N50BS)	PDF
1XFH32N50 Abstract: 1XFH 30n5 Text: H VDSS HiPerFET Power MOSFETs 500 V 500 V IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D DS on 0.16 Q 0.15 Q ^D25 30 A 32 A t. < 250 ns Preliminary data Symbol Maxi mum Rati ngs Test Conditions V DSS T = 25°C to 150°C	OCR Scan	30N50 32N50 32N50 O-247 O-268 1XFH32N50 1XFH 30n5	PDF
32N50 Abstract: No abstract text available Text: n ix Y S IXGH 32N50B IXGH 32N50BS HiPerFAST IGBT v CES ^C25 ^ C E sa t tfi = = = = 500 V 60 A 2.0 V 80 ns 4C ¿) Ae Maximum Ratings Sym bol Test Conditions V CES Tj = 25°C to 150°C 500 V v CGR Tj = 25°C to 150°C; R OE = 1 M Q 500 V v GES v GEM Continuous	OCR Scan	32N50B 32N50BS O-247 32N50BS) B2-17 32N50	PDF

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32N50 Search Results

32N50 Result Highlights (1)

32N50 Price and Stock

Vishay Siliconix IRFP32N50KPBF

Littelfuse Inc IXFB132N50P3

Littelfuse Inc IXFN132N50P3

Infineon Technologies AG SPW32N50C3FKSA1

Littelfuse Inc IXFL132N50P3

32N50 Datasheets (2)

32N50 Datasheets Context Search

125OC

32N50Q

IXFR32N50

IXFR32N50

30N50

Untitled

td 4950

fast IXFX

30N50

32N50Q

32n50

Untitled

td 4950

32n50

Untitled

32N50

Untitled

Untitled

Untitled

32N50

30N50

Untitled

1XFH32N50

32N50