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    Microchip Technology Inc PIC32MX320F032H-40I/PT

    IC MCU 32BIT 32KB FLASH 64TQFP
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    Microchip Technology Inc PIC32MX320F064H-40I/MR

    IC MCU 32BIT 64KB FLASH 64VQFN
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    Microchip Technology Inc PIC32MX320F128L-80V/BG

    IC MCU 32BIT 128KB FLSH 121TFBGA
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    DigiKey PIC32MX320F128L-80V/BG Tray 184 1
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    Microchip Technology Inc PIC32MX320F128L-80I/BG

    IC MCU 32BIT 128KB FLSH 121TFBGA
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    Microchip Technology Inc PIC32MX320F128L-80I/PT

    IC MCU 32BIT 128KB FLASH 100TQFP
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    DigiKey PIC32MX320F128L-80I/PT Tray 119 1
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    32MX32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MS46H64M32L2SB-XX *PRELIMINARY 2Gb LPDDR 2 x 32Mx32 FEATURES  Package: GENERAL DESCRIPTION • 152 Plastic Ball Grid Array (PBGA), 14 x 14 mm Microsemi MS46H64M32L2SB package-on-package (PoP) MCP product combines two Mobile LPDRAM devices in a single MCP.


    Original     		PDF MS46H64M32L2SB-XX 32Mx32) MS46H64M32L2SB 268M-bit

    "32Mx32" DRAM 72-pin simm

    Abstract: HANBit 72-pin SIMM HMD32M32M16G 1760
    Text: HANBit HMD32M32M16G 128Mbyte 32Mx32 72-pin Fast Page Mode 4K Ref. SIMM Design 5V Part No. HMD32M32M16G GENERAL DESCRIPTION The HMD32M32M16G is a 32M x 32bit dynamic RAM high-density memory module. The module consists of sixteen CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A


    Original     		PDF HMD32M32M16G 128Mbyte 32Mx32) 72-pin HMD32M32M16G 32bit 32-pin 72-pin, "32Mx32" DRAM 72-pin simm HANBit 72-pin SIMM 1760

    H5MS1G22

    Abstract: h5ms1g H5MS1G22MFP H5MS1G32MFP hynix mcp
    Text: 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O Specification of 1Gb 32Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 32Mx32bit) 32bit) H5MS1G22MFP H5MS1G32MFP page23) 100mA 120mA 450uA 500uA H5MS1G22 h5ms1g hynix mcp

    Untitled

    Abstract: No abstract text available
    Text: FEDR26V01G54R-01-01 OKI Semiconductor MR26V01G54R 32M–Word x 32–Bit Page Mode Issue Date: Oct 30, 2007 P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit


    Original     		PDF FEDR26V01G54R-01-01 MR26V01G54R

    D3157

    Abstract: 2A243 D1267
    Text: FEDR26V01G54R-002-03 Issue Date: Oct. 01, 2008 MR26V01G54R 32M–Word  32–Bit or 64M–Word  16–Bit Page Mode P2ROM FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply


    Original     		PDF FEDR26V01G54R-002-03 MR26V01G54R 32Mx32 64Mx16-bit 32-Bit 16-word 16-Bit D3157 2A243 D1267

    1170D28

    Abstract: No abstract text available
    Text: FEDR26V01G54R-002-03 Issue Date: Oct. 01, 2008 MR26V01G54R 32M–Word x 32–Bit or 64M–Word × 16–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit


    Original     		PDF FEDR26V01G54R-002-03 MR26V01G54R 32Mx32 64Mx16-bit 32-Bit 16-word 16-Bit 1170D28

    KMM53232004CK

    Abstract: KMM53232004CKG
    Text: DRAM MODULE KMM53232004CK/CKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CK/CKG DRAM MODULE KMM53232004CK/CKG


    Original     		PDF KMM53232004CK/CKG 32Mx32 16Mx4 KMM53232004CK/CKG 16Mx4, KMM53232004C 32Mx32bits KMM53232004CK KMM53232004CKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53213200BE0/BJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.1 June 1998 DRAM MODULE M53213200BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53213200BE0/BJ0-C 32Mx32 16Mx4 M53213200BE0/BJ0-C 16Mx4, 32Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: SU5323285D8F6CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5323285D8F6CG 32Mx32 128MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5323285D8F6CG 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5323285D8F6CU SM5323285D8F6CG SB5323285D8F6CG 32Mx32 128MB) 100-pin 32Mx8 DDR266A,

    samsung CL21

    Abstract: K4X1G323PC K4X1G323PC-7 K4X1G323 CL21 CL31 DDR266 DDR333 row decoder
    Text: K4X1G323PC - L F E/G Mobile DDR SDRAM 32Mx32 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)


    Original     		PDF K4X1G323PC 32Mx32 samsung CL21 K4X1G323PC-7 K4X1G323 CL21 CL31 DDR266 DDR333 row decoder

    EMRS-2

    Abstract: K4J10324QD-HC12 k4j10324qd-hj1a K4J10324QD EMRS2 k4j10324
    Text: Application Application Note Note 32Mx32 GDDR3 1GHz Setting - How to set 1Ghz operation in EMRS2 mode - May, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application


    Original     		PDF 32Mx32 K4J10324QD-HJ1A 1000MHz K4J10324QD-HC12/14 800/700MHz EMRS-2 K4J10324QD-HC12 k4j10324qd-hj1a K4J10324QD EMRS2 k4j10324

    K4J10324QD-HC12

    Abstract: k4j10324qd-hj1a 32Mx32 K4J10324QDHC12 K4J10324QD gddr3 k4j10324qdhj1a k4j10324qd-hc
    Text: Application Application Note Note 32Mx32 GDDR3 900MHz - Compatibility of 900MHz & 1GHz - May, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


    Original     		PDF 32Mx32 900MHz 900MHz/1GHz K4J10324QD-HJ1A K4J10324QD-HC12/14 800/700MHz 900MHz K4J10324QD-HC12 k4j10324qd-hj1a K4J10324QDHC12 K4J10324QD gddr3 k4j10324qdhj1a k4j10324qd-hc

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53233200CE0/CJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53233200CE0/CJ0-C DRAM MODULE M53233200CE0/CJ0-C


    Original     		PDF M53233200CE0/CJ0-C 32Mx32 16Mx4 M53233200CE0/CJ0-C 16Mx4, 32Mx32bits

    MT46H32M32LFCM-6

    Abstract: MICRON Cross Reference AS4MDDR32M32PBG-6/ET AS4MDDR32M32PBG-6
    Text: 1Gb MOBILE DDR SRAM AS4MDDR32M32PBG Micross Components Data Sheet Addendum 32Mx32 mobile DDR SDRAM Micross Device part# AS4MDDR32M32PBG-6/ET Base OEM part# MT46H32M32LFCM-6 L IT:A OEM vendor: Micron About this Addendum: Micross Components sources the plastic encapsulated part from the


    Original     		PDF AS4MDDR32M32PBG 32Mx32 AS4MDDR32M32PBG-6/ET MT46H32M32LFCM-6 -46oC 105oC -40oC 105oC MICRON Cross Reference AS4MDDR32M32PBG-6/ET AS4MDDR32M32PBG-6

    Untitled

    Abstract: No abstract text available
    Text: SM532323578F63R April 30, 2002 Orderable Part Numbers Part Numbers SM532323578F63R Description 32Mx32 128MB , SDRAM 100-pin DIMM, Unbuffered 16Mx16 Based, PC133, CL3, 25.40mm Revision History • April 30, 2002 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM532323578F63R SM532323578F63R 32Mx32 128MB) 100-pin 16Mx16 PC133, 128MByte 32Mx32)

    DDR333B

    Abstract: No abstract text available
    Text: SU5323285D8F6CL January 17, 2005 Ordering Information Part Numbers Description Module Speed SM5323285D8F6CL 32Mx32 128MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR333B, 30.48mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5323285D8F6CL 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5323285D8F6CL SM5323285D8F6CL SB5323285D8F6CL 32Mx32 128MB) 100-pin 32Mx8 DDR333B, DDR333B

    RA-Z

    Abstract: No abstract text available
    Text: SM532328574F03R May 1, 2002 Orderable Part Numbers Part Numbers SM532328574F03R Description 32Mx32 128MB , SDRAM 100-pin DIMM, Unbuffered 16Mx8 Based, PC133, CL3, 29.72mm Revision History • May 1, 2002 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM532328574F03R SM532328574F03R 32Mx32 128MB) 100-pin 16Mx8 PC133, 128MByte 32Mx32) RA-Z

    32Mx32

    Abstract: DIMM 100-pin 3232ZASQM4G09T 100-pin SDRAM
    Text: 32M x 32 Bit 100 PIN SDRAM DIMM 100 PIN SYNCHRONOUS DRAM DIMM 3232ZASQM4G09T 100 Pin 32Mx32 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment Pin# Pin# 1 Vss 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60


    Original     		PDF 3232ZASQM4G09T 32Mx32 256x8 DS623-11 DIMM 100-pin 100-pin SDRAM

    "24 pin" DRAM

    Abstract: No abstract text available
    Text: DRAM MODULE KM M53232000B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232000B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF M53232000B 32Mx32 16Mx4 KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits 16Mx4bits "24 pin" DRAM

    SD1G32VS2490

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRam 32Mx32-SOP Synchronous Dynamic Ram MODULE 3D SD1G32VS2490 1Gbit SDRam organized as 32Mx32, based on 32Mx16 Pin Assignment Top View SOP 70 - (Pitch : 0.635 mm) Features - Stack of two 512Mbit SDRam. - Organized as 32Mx32-bit. - Single +3.3V power supply.


    OCR Scan     		PDF 32Mx32-SOP SD1G32VS2490 32Mx32, 32Mx16 512Mbit 32Mx32-bit. FP-0490-R SD1G32VS2490

    32Mx32

    Abstract: 3DFP
    Text: MEMORY MODULE SDRam 64Mx32-SOP a HE ICO company Synchronous Dynamic Ram MODULE 3D SD2G32VS4484 2Gbit SDRam organized as 64Mx32, based on 32Mx16 Pin Assignment Top View SOP 70 - (Pitch : 0.635 mm) Features - Stack of four 512Mbit SDRam. - Organized as 32Mx32-bit.


    OCR Scan     		PDF 64Mx32-SOP SD2G32VS4484 64Mx32, 32Mx16 512Mbit 32Mx32-bit. 3DFP-0484-REV 32Mx32 3DFP

    CACP

    Abstract: No abstract text available
    Text: DRAM MODULE KM M53232004B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232004B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS cacp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF M53232004B 32Mx32 16Mx4 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits CACP

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232004AK/AKG KMM53232004AK/AKG EDO Mode 32M X 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53232004A is a 32Mx32bits RAM high density KM M 53232004A memory consists of module. sixteen Dynamic The Samsung


    OCR Scan     		PDF KMM53232004AK/AKG 16Mx4, 3232004A 32Mx32bits 16Mx4bits KMM53232004AK/AKG M53232004AK cycles/64ms M53232004AKG

    64mb 72-pin simm

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232004BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53232004BK/BKG 32Mx32 16Mx4 KMM53232004BK/BKG 16Mx4, 16Mx4bits KMM53232004BK cycles/64ms 64mb 72-pin simm