Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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M390S3320DT1-C7A
Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range
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PC133
M390S3320DT1
M390S3320DT1
32Mx72
32Mx4,
M390S3320DT1-C7C
24-pin
133MHz
M390S3320DT1-C7A
M390S3320DT1-C7A
M390S3320DT1-C7C
PC133 registered reference design
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M374S3253ATS
Abstract: M374S3253CTU
Text: M374S3253CTU PC133/PC100 Low Profile Unbuffered DIMM M374S3253ATS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3253CTU is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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M374S3253CTU
PC133/PC100
M374S3253ATS
32Mx72
32Mx8,
M374S3253CTU
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M381L6423DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M381L6423DTL
184pin
512MB
64Mx72
32Mx72
32Mx8
72-bit
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Untitled
Abstract: No abstract text available
Text: M383L6423DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6423DTS 184pin Registered DDR SDRAM MODULE Revision History
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M383L6423DTS
184pin
512MB
64Mx72
32Mx72
32Mx8
72-bit
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M390S3253CTU
Abstract: M390S3253CTU-C1H M390S3253CTU-C1L M390S3253CTU-C7A M390S3253CTU-C7C PC133 registered reference design
Text: M390S3253CTU PC133/PC100 Low Profile Registered DIMM M390S3253CTU SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3253CTU is a 32M bit x 72 Synchronous
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M390S3253CTU
PC133/PC100
M390S3253CTU
32Mx72
32Mx8,
32Mx8
400mil
18-bits
M390S3253CTU-C1H
M390S3253CTU-C1L
M390S3253CTU-C7A
M390S3253CTU-C7C
PC133 registered reference design
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HYM71V32D755AT4
Abstract: HYM71V32D755AT4-8 HYM71V32D755AT4-P HYM71V32D755AT4-S
Text: 32Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32D755AT4 Series DESCRIPTION The Hynix HYM71V32D755AT4 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 200pin
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32Mx72
PC100
32Mx4
HYM71V32D755AT4
32Mx72bits
32Mx4bits
400mil
54pin
200pin
HYM71V32D755AT4-8
HYM71V32D755AT4-P
HYM71V32D755AT4-S
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M383L3223BT1
Abstract: PC200
Text: M383L3223BT1 184pin Registered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72 based on 32Mx8 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Registered DDR SDRAM MODULE M383L3223BT1 Revision History Revision 0 (Aug 1998)
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M383L3223BT1
184pin
256MB
32Mx72
32Mx8
72-bit
133Mhz)
M383L3223BT1
PC200
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DDR200
Abstract: DDR266B HYMD132G7258-H HYMD132G7258-L
Text: HYMD132G7258-H/L 32Mx72 Registered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD132G7258-H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD132G7258-H/L series consists of eighteen 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix
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HYMD132G7258-H/L
32Mx72
HYMD132G7258-H/L
184-pin
16Mx8
400mil
184pin
DDR200
DDR266B
HYMD132G7258-H
HYMD132G7258-L
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HYM71V32755ALT8M-8
Abstract: HYM71V32755ALT8M-P HYM71V32755ALT8M-S HYM71V32755AT8M HYM71V32755AT8M-8 HYM71V32755AT8M-P HYM71V32755AT8M-S
Text: 32Mx72 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32755AT8M Series DESCRIPTION The Hynix HYM71V32755AT8M Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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32Mx72
PC100
16Mx8
HYM71V32755AT8M
32Mx72bits
16Mx8bits
400mil
54pin
168pin
HYM71V32755ALT8M-8
HYM71V32755ALT8M-P
HYM71V32755ALT8M-S
HYM71V32755AT8M-8
HYM71V32755AT8M-P
HYM71V32755AT8M-S
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M381L3313CT1
Abstract: 2619 eeprom
Text: M381L3313CT1 184pin Unbuffered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72(16Mx72*2 bank based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.1 June. 2001 Rev. 0.1 June. 2001 M381L3313CT1 184pin Unbuffered DDR SDRAM MODULE Revision History
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M381L3313CT1
184pin
256MB
32Mx72
16Mx72
16Mx8
72-bit
M381L3313CT1
2619 eeprom
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M390S3320DT1
Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133
M390S3320DT1
M390S3320DT1
32Mx72
32Mx4,
32Mx4
400mil
18-bits
M390S3320DT1-C7A
M390S3320DT1-C7C
PC133 registered reference design
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M381L6423CTL cb0
Abstract: m 1305 M381L6423CTL DDR200 DDR266A DDR266B
Text: M381L6423CTL 184pin Unbuffered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.1 December. 2001 Rev. 0.1 Dec. 2001 M381L6423CTL 184pin Unbuffered DDR SDRAM MODULE
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M381L6423CTL
184pin
512MB
64Mx72
32Mx72
32Mx8
72-bit
M381L6423CTL cb0
m 1305
M381L6423CTL
DDR200
DDR266A
DDR266B
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Untitled
Abstract: No abstract text available
Text: 32M x 72 bits Low Profile Registered DDR SDRAM DIMM HYMD132G725A L 4M-K/H/L DESCRIPTION Hynix HYMD132G725A(L)4M-K/H/L series is low profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix
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HYMD132G725A
184-pin
32Mx72
32Mx4
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: M383L3310CT1 184pin Registered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72 based on 32Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.4 May. 2002 Rev. 0.4 May. 2002 M383L3310CT1 184pin Registered DDR SDRAM MODULE Revision History Revision 0.0 (Mar. 2001)
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M383L3310CT1
184pin
256MB
32Mx72
32Mx4
72-bit
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Untitled
Abstract: No abstract text available
Text: 32Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD232G726B L 8M-M/K/H/L Revision History Revision No. History Draft Date Remark 0.1 Defined Target Spec. Oct. 2002 Preliminary 0.2 Defined Cap. Value Dec. 2003 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
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32Mx72
HYMD232G726B
184-pin
32Mx72127
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Untitled
Abstract: No abstract text available
Text: 32Mx72 bits Registered DDR SDRAM DIMM HYMD132G725A L 8-K/H/L DESCRIPTION Hynix HYMD132G725A(L)8-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD132G725A(L)8-K/H/L
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32Mx72
HYMD132G725A
184-pin
16Mx8
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: M381L3223CT1 184pin Unbuffered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72 based on 32Mx8 DDR SDRAM Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.0 September. 2001 Rev. 0.0 Sep. 2001 M381L3223CT1 184pin Unbuffered DDR SDRAM MODULE Revision History
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M381L3223CT1
184pin
256MB
32Mx72
32Mx8
72-bit
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W3DG7232V-AD1
Abstract: No abstract text available
Text: White Electronic Designs W3DG7232V-AD1 PRELIMINARY* 256MB - 32Mx72 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 Compatible The W3DG7232V is a 32Mx72 synchronous DRAM module which consists of nine 32Mx8 SDRAM components in TSOP II package, and one 2K EEPROM in an 8 pin TSSOP
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W3DG7232V-AD1
256MB
32Mx72
PC100
PC133
W3DG7232V
32Mx8
W3DG7232V-AD1
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DDR200
Abstract: DDR266 W3EG7236S-D3
Text: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB – 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine
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W3EG7236S-D3
256MB
32Mx72
100MHz
W3EG7236S
256Mb
32Mx8
DDR200
DDR266
W3EG7236S-D3
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HSD32M72D18A
Abstract: No abstract text available
Text: HANBit HSD32M72D18A Synchronous DRAM Module 256Mbyte 32Mx72bit , DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD32M72D18A (Unbuffered) GENERAL DESCRIPTION The HSD32M72D18A is a 32M x 72 bit Synchronous Dynamic RAM high-density memory module. The module consists
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HSD32M72D18A
256Mbyte
32Mx72bit)
16Mx8,
HSD32M72D18A
400mil
168-pin
33uF-decoupling
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Untitled
Abstract: No abstract text available
Text: =• = IBM13M32734BCD Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: i -2 6 0 ,-3 6 0 | Reg. i Buff. ; Reg. ! Buff DIMM CAS Latency
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IBM13M32734BCD
168-Pin
32Mx72
66/100MHz
PC100
13M32734BCD
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM MODULE Features • 32Mx72 Dual Bank Fast Page Mode DIMM System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 Vss/Vcc Pir|s) -4 Byte Interleave enabled -Buffered PDs • Performance:
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IBM11M32730B
IBM11M32730C
32Mx72
110ns
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