DELL inspiron power supply diagram
Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
Text: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for
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4MByte/96MByte/128MByte/160MByte/224MByte
W7B6016M1XG-S128
W7B6016M1XG-S7
W7B6032M1XG-S128
W7B6032M1XG-S7
W7B6048M1XG-S128
W7B6048M1XG-S7
W7B6064M1XG-S128
W7B6064M1XG-S7
W7B6032M1XG-S256
DELL inspiron power supply diagram
Thinkpad 535X
philips pcd500
dell inspiron
ARMADA 300 ECC
COMPAQ
Toshiba Satelite C
APPLE dock
prius
cf 44 pin to ide 1.8
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TRUEFFS
Abstract: toshiba toggle mode nand toshiba bios Diskonchip 1000H 800H
Text: ADVANCE INFORMATION Am71LVM032 32 MB Disk-on-Chip Single Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk – full hard disk drive emulation — 32MByte 256Mbit capacity — Single die chip, based on 0.16 µm NAND flash
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Am71LVM032
32MByte
256Mbit)
48-pin
8-bit/16-bit
TRUEFFS
toshiba toggle mode nand
toshiba bios
Diskonchip
1000H
800H
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diskonchip
Abstract: MD3831-D16-V3Q18 diskonchip g4 MD3831-D16-V3Q18-X AP-DOC-057 smartphone MOTHERBOARD CIRCUIT diagram AD10 PR31700 password lock protection using mobile phone f Diskonchip Millennium Plus
Text: Data Sheet Mobile DiskOnChip Plus 16/32MByte 1.8V I/O Flash Disk, Protection and Security-Enabling Features Highlights Mobile DiskOnChip Plus 16/32MByte 128/256Mbit is one of the industry’s most efficient storage solutions, with the fastest write rates, the
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16/32MByte
128/256Mbit)
95-SR-000-10-8L
diskonchip
MD3831-D16-V3Q18
diskonchip g4
MD3831-D16-V3Q18-X
AP-DOC-057
smartphone MOTHERBOARD CIRCUIT diagram
AD10
PR31700
password lock protection using mobile phone f
Diskonchip Millennium Plus
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HMD8M36M6
Abstract: HMD8M36M6G
Text: HANBit HMD8M36M6G 32Mbyte 8Mx36 72-pin SIMM FP with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6, HMD8M36M6G GENERAL DESCRIPTION The HMD8M36M6 is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a
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HMD8M36M6G
32Mbyte
8Mx36)
72-pin
HMD8M36M6,
HMD8M36M6
36bit
50-pin
28pin
HMD8M36M6G
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Untitled
Abstract: No abstract text available
Text: SMART SM5664002EC/4EC Modular Technologies March 25, 1997 32MByte 4M x 66 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, ECC Features • • • • • • • • • • Configuration : ECC Access Time : 50/60/70ns Operation Mode : FPM Operating Voltage :
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SM5664002EC/4EC
32MByte
168-pin
50/60/70ns
300mil
AMP-390052-1
4Mx33
A10/A11
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Untitled
Abstract: No abstract text available
Text: SMART SM536084002P3UU Modular Technologies December 13, 1996 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM
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SM536084002P3UU
32MByte
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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Untitled
Abstract: No abstract text available
Text: SMART SM5400880F4EUUU SM5400880E4EUUU Modular Technologies Preliminary 32MByte 8M x 40 DRAM Module - 8Mx8 based 72-pin SIMM, ECC with Level Translators Features Part Numbers • • • • • • • • • • • SM5400880F4EUUU SM5400880E4EUUU Standard
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SM5400880F4EUUU
SM5400880E4EUUU
32MByte
72-pin
50/60/70/ns
400mil
AMP-7-382486-2
AMP-822019-4
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TAA 293
Abstract: No abstract text available
Text: SMART SM5360830U4Q6UU Modular Technologies July 14, 1997 32MByte 8M x 36 DRAM Module - 4Mx16 based 72-pin SIMM with Level Translators Features Part Numbers • • • • • • • • • • SM5360830F4Q6UU SM5360830E4Q6UU Configuration : Parity
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SM5360830U4Q6UU
32MByte
4Mx16
72-pin
SM5360830F4Q6UU
SM5360830E4Q6UU
50/60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
TAA 293
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Untitled
Abstract: No abstract text available
Text: SMART SM5360840UUEUUU Modular Technologies November 11, 1996 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM53608400UEUUU SM53608401UEUUU SM53608408UEUUU SM53608409UEUUU Standard
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SM5360840UUEUUU
32MByte
72-pin
60/70/80ns
300mil
SM53608400UEUUU
SM53608401UEUUU
SM53608408UEUUU
SM53608409UEUUU
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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HMNP16MM
Abstract: HMNP32MM HMNP32MM-55 HMNP32MM-70 REQ64 K6T4016C3
Text: HANBit HMNP32MM Non-Volatile SRAM MODULE 32Mbyte 8M x 32Bit , PCI interface, (SMM) 5V Part No. HMNP32MM GENERAL DESCRIPTION The HMNP32MM Nonvolatile SRAM is a 33,554,432-byte static RAM organized as 16,777,216 words by 16 bits. The HMNP32MM has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of
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HMNP32MM
32Mbyte
32Bit)
HMNP32MM
432-byte
HMNP16MM
HMNP32MM-55
HMNP32MM-70
REQ64
K6T4016C3
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HMD8M32M4
Abstract: HMD8M32M4G R1571
Text: HANBit HMD8M32M4G 32Mbyte 8Mx32 72-pin SIMM, FP Mode, 4K Ref. 5V Part No. HMD8M32M4, HMD8M32M4G GENERAL DESCRIPTION The HMD8M32M4 is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF
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HMD8M32M4G
32Mbyte
8Mx32)
72-pin
HMD8M32M4,
HMD8M32M4
32bit
50-pin
72-pin,
HMD8M32M4G
R1571
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Untitled
Abstract: No abstract text available
Text: January 1999 Revision 1.0 data sheet POB4UV6414C- 75/102 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The POB4UV6414C-(75/102)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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POB4UV6414C-
32MByte
PC/100
32-megabyte
144-pin,
MB81F641642D-
4Mx16
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TSOP 54 PIN
Abstract: No abstract text available
Text: September 1998 Revision 1.0 data sheet PDC4UV6414C- 102/103 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6414C-(102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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PDC4UV6414C-
32MByte
PC/100
32-megabyte
168-pin,
MB81F641642C-
4Mx16
TSOP 54 PIN
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC4U V6442- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6442-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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V6442-
32MByte
SDC4UV6442-
32-megabtye
168-pin,
B81117422A-
168-pin
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Untitled
Abstract: No abstract text available
Text: FUJITSU November 1996 Revision 1.0 DATA S H E E T - EDC4B V7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module 3.3 V (ECC), Buffered - General Description The EDC4BV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga
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V7282-
32MByte
EDC4BV7282-
32-megabyte
168-pins,
MB81V17805A-
74ABT16244
168-pin
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Untitled
Abstract: No abstract text available
Text: VZÄ WHITE /MICROELECTRONICS WPN644106GM0VG 32MBYTE 4Mx64 Synchronous DRAM (3.3V Supply) SO-DIMM MODULE A D V A N C ED * GENERAL DESCRIPTION FEATURES • M a x im u m fre q u e n c y = 1 0 0 M H z (tcc=1 0ns) T h e W h ite M ic ro e le c tro n ic s W P N 6 44 1 0 B G 1 -1OVG is a 4 M x 64
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WPN644106GM0VG
32MBYTE
4Mx64)
54-pin
400-m
144-pin
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Untitled
Abstract: No abstract text available
Text: cP IITSU June 1997 Revision 1.1 data sheet SDC4 U V7282C- 67/84/100/125 T-S 32MByte (4M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC4UV7282C-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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V7282C-
32MByte
SDC4UV7282C-
32-megabtye
168-pin,
B81117822A-
32MByt:
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC4U V6442- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6442-(67/84/100/125)T-S is a high performance, 32 rriegabtyo synchronous, dynamic RAM module organized as
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V6442-
32MByte
SDC4UV6442-
168-pin,
1117422A
32MByte
125MHz)
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Untitled
Abstract: No abstract text available
Text: cP IITSU January 1999 Revision 1.0 data sheet PDC4UV6414 D/E -(75/102)T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6414(D/E)-(75/102)T-S are high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M
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PDC4UV6414
32MByte
PC/100
32-megabyte
168-pin,
MB81F641642
4Mx16
32MByte
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Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4B V724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC), Buffered General Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
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32MByte
EDC4BV724
32-megabyte
168-pins,
MB81V1
74ABT16244
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Untitled
Abstract: No abstract text available
Text: <p June 1996 Revision 1.0 HATA fíH F F T - FSA8UN3642- 60/70 J(G/S)-S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642-(60/70)J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.
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FSA8UN3642-
32MByte
32-megabyte
72-pin,
B8117400A-
MB814100C-
60ation:
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Untitled
Abstract: No abstract text available
Text: cP IITSU November 1997 Revision 1.0 data sheet PDC4UV6484- 102/103/10 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6484-(102/103/10)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M
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PDC4UV6484-
32MByte
PC/100
32-megabyte
168-pin,
F16822B-
32MByte
72-pin
144-pin
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Untitled
Abstract: No abstract text available
Text: cP IITSU December 1997 Revision 2.0 data sheet SOB4UL6414- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SOB4UL6414-(67/84/100/125)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as
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SOB4UL6414-
32MByte
32-megabyte
144-pin,
B811641642A-
4Mx16
67Mhz
84Mhz
100Mhz
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