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    32KX9 Search Results

    32KX9 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    71589SA25Y Renesas Electronics Corporation 32KX9 BURST MODE Visit Renesas Electronics Corporation
    71589SA25Y8 Renesas Electronics Corporation 32KX9 BURST MODE Visit Renesas Electronics Corporation
    CY7C4271-10AXI Rochester Electronics LLC CY7C4271 - FIFO, 32KX9, 8ns, Synchronous, CMOS Visit Rochester Electronics LLC Buy

    32KX9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB
    Text: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		PDF CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pwhere CY7C4261 CY7C4271 CY7C4271-15LMB

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB
    Text: fax id: 5412 CY7C4261 CY7C4271 Back 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		PDF CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4261 CY7C4271 CY7C4271-15LMB

    CY7C4261V

    Abstract: CY7C4271V CY7C42X1V
    Text: fax id: 5421 CY7C4261V CY7C4271V PRELIMINARY 16K/32Kx9 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO


    Original     		PDF CY7C4261V CY7C4271V 16K/32Kx9 CY7C4261V) CY7C4271V) 67-MHz CY7C4261V/71V CY7C42X1V CY7C4261V CY7C4271V

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB 42616
    Text: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		PDF CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-ponductor CY7C4261 CY7C4271 CY7C4271-15LMB 42616

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB IDT72201 n25l
    Text: fax id: 5412 - CY7C4261 V CYPRESS CY7C4= 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		PDF CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin CY7C4261 CY7C4271 CY7C4271-15LMB IDT72201 n25l

    Untitled

    Abstract: No abstract text available
    Text: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords


    OCR Scan     		PDF CY7C460 CY7C462 CY7C464 32Kx9FIFO CY7C460, CY7C462,

    H.294

    Abstract: aa2c
    Text: INTEGRATED DEVICE 14E D • 4055771 G0Q3472 7 HIGH-SPEED STATIC RAM ORGANIZED AS 32Kx9 ADVANCE INFORMATION IDT 71509 -rwé -73- IH FEATURES: DESCRIPTIO N: • 32K x 9 Parity checking Static RAM The IDT71509 is a 294,912-bit high-speed static RAM organized


    OCR Scan     		PDF G0Q3472 32Kx9 IDT71509 912-bit 450mW H.294 aa2c

    ken2

    Abstract: No abstract text available
    Text: fax id: 5421 •■■■■■■'■jH/m'r. a S S K , : CY7C4261V CY7C4271V 'S^i,„*$ & :*■ _ . " T jjjl? 16K/32Kx9 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems


    OCR Scan     		PDF CY7C4261V CY7C4271V 16K/32Kx9 CY7C4261V) CY7C4271V) 67-MHz ken2

    a32 smd

    Abstract: No abstract text available
    Text: fax id: 5412 '•'■'■'■'■'■'■‘JJSt>iW.-. a S S K , : CY7C4261 CY7C4271 'S^ì,„*$ & :*■ _ jg ? . "T 16K/32Kx9 Deep Sync FIFOs Features Functional Description High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261)


    OCR Scan     		PDF CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz a32 smd

    32Kx9SRAM

    Abstract: bit-slice
    Text: QS83290 High Speed CMOS 32Kx9 SRAM with Common I/O Q QS83290 ADVAN CE INFORMATION FE A TU R E S /B E N E FIT S • • • • 15/20/25/30ns Commercial 20/25/30ns Military TTL compatible I/O Available in 32-pin 300/600-mil DIP, SOJ Equal access and cycle times


    OCR Scan     		PDF QS83290 32Kx9 QS83290 15/20/25/30ns 20/25/30ns 32-pin 300/600-mil MIL-STD-883 32Kx9SRAM bit-slice

    transistor military

    Abstract: n1520
    Text: Q S83290 High Speed CMOS 32Kx9 SRAM with Common I/O Q oseaaso advance in fo r m a tio n FEATURES/BENEFITS • • • • 15/20/25/30ns Commercial 20/25/30ns Military TTL compatible I/O Available in 32-pin 300/600-mil DIP, SOJ • • • • Equal access and cycle times


    OCR Scan     		PDF S83290 32Kx9 15/20/25/30ns 20/25/30ns 32-pin 300/600-mil MIL-STD-883 QS83290 transistor military n1520

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5421 CYPRESS PRELIMINARY CY7C4261V CY7C4271V 16K/32Kx9 Low Voltage Deep Sync FIFOs Functional Description Features • 3.3V operation or low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out (FIFO


    OCR Scan     		PDF CY7C4261V CY7C4271V 16K/32Kx9 CY7C4261V/71V CY7C42X1V 32-Lead

    28 pin ceramic dip

    Abstract: d07.3 as32
    Text: ^EDI EDI8932C 45/55 Monolithic The fu tu r e . . . today, i 32Kx9 SRAM CMOS, High Speed Monolithic Features The EDI8932C Is a high performance, low power, high speed CMOS Static RAM organized as 32,768 words by 9 bits each. Inputs and three-state outputs are TTL compatible and allow for direct interfacing


    OCR Scan     		PDF EDI8932C 32Kx9 EDI8932C MIL-STD-883C, 768x9 A0-A14 D04DOSOQ6 28 pin ceramic dip d07.3 as32

    SRM2A256SLC

    Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
    Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0


    OCR Scan     		PDF SRM2264LC SRM2264LCT SRM2464MT* SRM2564C SRM2A256SLC SRM2A256LLMX SRM2A256LLCT SRM2B256SLMX 32KX8 SRM2B256SLMT SRM2A256SLC SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2564C SRM20100LMT tl512 SRM20116

    Untitled

    Abstract: No abstract text available
    Text: BurstRAMs Processor Specific MCM62486B MCM62940B MCM63P532 MCM67B518 MCM67C518 MCM67H518 MCM67J518 MCM67M518 MCM67B618 MCM67B618A 32Kx9 .5-3 32Kx9 . 5-12 32Kx32 .5-20 32Kx18 .5-31


    OCR Scan     		PDF MCM62486B MCM62940B MCM63P532 MCM67B518 MCM67C518 MCM67H518 MCM67J518 MCM67M518 MCM67B618 MCM67B618A

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5412 CYPRESS CY7C4261 CY7C4271 PRELIMINARY 16K/32Kx9 Deep Sync FIFOs Functional Description Features High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261) 32K x 9 (CY7C4271) 0.5 micron CMOS for optimum speed/power High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		PDF CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz 32-pin

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs


    OCR Scan     		PDF 32Kx9 AS7C259 AS7C259L 32Kx9 32-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C4261 CY7C4271 •ÄÄÄK 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		PDF CY7C4261 CY7C4271 16K/32 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5412 CY7C4261 CY7C4271 /C Y P R E SS Features 16K/32Kx9 Deep Sync FIFOs Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K X 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		PDF CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-pin 32-pln

    ci 3860, 8 pin

    Abstract: 22Z3
    Text: High Performance 32Kx9 CMOS SRAM 11 W ESW . AS7C259 AS7C259L 32K x 9 C M O S S R A M C o m m o n I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e


    OCR Scan     		PDF AS7C259 32Kx9 AS7C259L 605mW 55mWTTLI/0 125mW 10MHz 32-pin ci 3860, 8 pin 22Z3

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx9 CMOS SRAM 11 AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e


    OCR Scan     		PDF 32Kx9 AS7C259 AS7C259L 32Kx9

    Untitled

    Abstract: No abstract text available
    Text: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32 Kx 9 C M O S S R A M C o m m o n I/O {F E A TU R E S • Organization: 32,768 words x 9 bits • 2.0V data retention (L version) • High Speed - Industry's fastest OE Access Time 12/15/20/25/35 ns Address access time


    OCR Scan     		PDF 32Kx9 AS7C259 AS7C259L 605mW 125mW 10MHz

    32Kx16

    Abstract: Intel EEPROM 32kx8
    Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4


    OCR Scan     		PDF 32Kx8 64KX8 32KX16 128KX8 64KX16 32KX32 64KX32 512KX8 256KX16 Intel EEPROM 32kx8

    Untitled

    Abstract: No abstract text available
    Text: 32Kx9 Fast SRAM AS7C259 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-8 ns Vcc GND ♦ Low power - 633 mW @ 100 MHz - 11 mW @ 10 MHz standby AO A1 - 2.75 mW @ 10 MHz standby: L version A2 A3 ♦ Automatic CE1/CE2 power down


    OCR Scan     		PDF 32Kx9 AS7C259 AS7C259 th9-15 7C259-20 7C259-25 7C259-35 7C259-12