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JRH Electronics M83513/28-E01NN MICRO D CONNECTOR
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JRH Electronics M83513/28-E01CW MICRO D CONNECTOR
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DigiKey	M83513/28-E01CW	Bulk	84			1 - 10 - 100 - 1000 - 10000 -	Buy Now
JRH Electronics M83513/28-E01CP MICRO D CONNECTOR
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DigiKey	M83513/28-E01CP	Bulk	17			1 - 10 - 100 - 1000 - 10000 -	Buy Now
JRH Electronics M83513/28-E01CN MICRO D CONNECTOR
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DigiKey	M83513/28-E01CN	Bulk	10			1 - 10 - 100 - 1000 - 10000 -	Buy Now
JRH Electronics M83513/28-E01PT MICRO D CONNECTOR
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DigiKey	M83513/28-E01PT	Bulk	10			1 - 10 - 100 - 1000 - 10000 -	Buy Now

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328E01 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PDF	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
MRW52602 Abstract: MRW52102 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRW52102 Series The RF Line M ic ro w a v e Linear P o w er Transistors 6 dB 1 -2 GHz 3 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . d e s ig n e d p r im a r ily fo r la rg e -s ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s in th e 1 to 2	OCR Scan	PDF	MRW52102 MRW52602
MOTOROLA 13003 Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER	OCR Scan	PDF	MRW3000 TRW3000 MOTOROLA 13003 F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
TRW2301 Abstract: No abstract text available Text: MOTORCLA SC XSTRS/R F lE E D \| t.3b7E5M 00 0 0 3 7 ^ 3 \| I MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 2301 TRW 2301F The RF Line M ic r o w a v e P o w e r T r a n s is t o r s . . . d e sign ed primarily for wideband, large-signal output and driver amplifier sta ge s in	OCR Scan	PDF	2301F 100pf 50fiF, TRW2301 TRW2301
TRW52604 Abstract: TRW52104 M 2530 motorola Text: MOTORCLA SC XSTRS/R F 15E D \| b3b?254 00003^0 ? \| MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T R W 521 04 Se rie s The RF Line Microwave Linear Power Transistors . . . d e s ig n e d p rim a rily fo r w id e b a n d , la r g e -s ig n a l ou tp u t a n d d riv e r a m p lifie r s t a g e s in	OCR Scan	PDF	tic11 TRW52604 TRW52104 M 2530 motorola
TRW54101 Abstract: 120mA-load GP-13F TRW5 Text: M Q T O R C L A SC XSTRS/R F 15E D \| bBbVHSM 0006411 t. \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW54001 Series The RF Line M icrowave Linear Pow er Transistors . . . designed prim arily for w ideband, large-signal output and driver amplifier stages in the 1 to 4 GHz frequency range.	OCR Scan	PDF	TRW54001 GP-14 b3b7254 TRW54101 120mA-load GP-13F TRW5
GP141 Abstract: MRW53102 GP-141 MRW53402 TRW53102 Text: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M R W 53102 Series The RF Line M ic ro w a v e Linear P o w e r T ra n sisto rs 7 TO 8 dB 1 -3 GHz 1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . desig n ed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in th e 1 to 3	OCR Scan	PDF	TRW53102 GP141 MRW53102 GP-141 MRW53402
MRW2304 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW2304 MRW2304F The RF Line M icrowave Power Transistors . . . d esig n e d p rim a rily for larg e-sig n al output and d rive r am p lifier stages in the 1.5 to 3 GH z fre q u e n c y range. 8 dB 1.5-3 GHz 4 W ATTS M ICROW AVE	OCR Scan	PDF	MRW2304 MRW2304F MRW2304, 10OpF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	PDF	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
TRW53602 Abstract: 1826s12 TRW53102 53602 PE 1938 TRW53202 Text: M OTOROLA SC XSTRS/R F 15E 0 \| b3t,72S4 00flfi4GS ü I MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T R W 53102 Se rie s The RF Line M icrowave Linear Power Transistors . . . d e sig n e d p rim arily fo r w ide b and , large -signal output an d driver am plifier sta g e s in	OCR Scan	PDF	00flfi4GS TRW53602 1826s12 TRW53102 53602 PE 1938 TRW53202
motorola 6820 Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279 Text: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 \| XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S	OCR Scan	PDF	TW-200 TRW53001 TRW53001 JUNCT10N motorola 6820 motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
53601 Abstract: MRW53001 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW53001 Series The RF Line M ic ro w a v e Linear P o w e r Transistors . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 1 to 3 GHz fre q u e n cy range.	OCR Scan	PDF	MRW53001 TRW53001 MRW5300 MRW53001 MRW53601 53601
MRW2307F Abstract: MRW2307 328E01 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R W 2307 M RW 2307F The RF Line M icrow ave Power Transistors . . . designed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in the 1.5 to 3 GHz fre q u e n cy range. 8 dB 1 .5 -3 GHz 7 WATTS	OCR Scan	PDF	2307F TRW2307 10OpF MRW2307F MRW2307 328E01

TRW2304 Abstract: ICB01 328F-01 Text: MOTOROLA SC X S T R S /R F MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TRW2304 TRW2304F The RF Line M ic r o w a v e P o w e r T r a n s isto rs . . . d esigned primarily for wideband, large-signal output and driver amplifier sta ge s in the 1.5 to 3 GHz frequency range.	OCR Scan	PDF	TRW2304 TRW2304F T-33-C TRW2304 ICB01 328F-01
MRW52001 Abstract: 52601 MRW52501 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RW 52001 Series The RF Line Microwave Linear Power Transistors 6 dB 1 TO 2 GHz 1.5 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . designed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in the 1 to 2	OCR Scan	PDF	TRW52001 ITW-200) MRW52001 MRW52001 MRW52101, MRW52601 52601 MRW52501