2SK937
Abstract: Y352 2SK93-7
Text: Ordering number:EN3006 N-Channel Junction Silicon FET 2SK937 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Large yfs. · Small Ciss. unit:mm 2019B [2SK937] 5.0 4.0 5.0 4.0 0.6 2.0 0.45
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EN3006
2SK937
2019B
2SK937]
SC-43
2SK937
Y352
2SK93-7
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2SK937
Abstract: No abstract text available
Text: Ordering number:EN 3006 _ 2SK937 No.3006 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Adoption of FBET process •Large lyfsl ■Small ciss A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage
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2SK937
100//A
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2SK968
Abstract: 2SK9
Text: SANYO S E M I C O N D U C T O R CORP 2SK968 S2E D • 7 en ? ü 7 b ODQb'IbB 5 ■ T - 3 I .- Z S # N -C h a n n e l Junction Silicon FET 2065 High-Frequency General-Purpose Amp Applications F e a tu re s • Small-sized package p erm ittin g 2SK968-applied se ts to be m ade sm a lle r an d slim m er
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2SK968
2SK968-applied
2SK968
2SK9
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3 0 0 6 2SK 937 N o.3006 N -C hannel Ju n ctio n Silicon FET High-Frequency General-Purpose Amp Applications F e a tu r e s • Adoption of FBET process • L arge lyfsl • Sm all Ciss b s o lu te M a x im u m R a tin g s a t T a= 25°C
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SC-43
rO-92
3C-43
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3006 i SA%YO _ 2SK937 No.3006 N-Channel Junction Silicon FET i High-Frequency General-Purpose Amp Applications F eatu res • Adoption of FB E T process •Large lyfsi •Small CiSS A bsolute Maximum R atings at Ta = 25°C
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2SK937
2SK937
3289MO
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