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    3203 TRANSISTOR Search Results

    3203 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    3203 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3203

    Abstract: AN3203 APP3203 MAX7409 MAX966 3203
    Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS FILTER CIRCUITS ANALOG Keywords: lowpass filter, step response, time-domain response, signal conditioning, switched-capacitor filter, SC filter Apr 26, 2004 APPLICATION NOTE 3203 Lowpass Filter Has Improved Step Response


    Original     		PDF fOSC/100. com/an3203 MAX7409: MAX966: AN3203, APP3203, Appnote3203, transistor 3203 AN3203 APP3203 MAX7409 MAX966 3203

    NE567

    Abstract: tone decoder ne567 567 tone decoder
    Text: Issued March 1998 284-3203 Data Pack J Phase locked loops NE567 Data Sheet RS stock number 307-294 The RS NE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load


    Original     		PDF NE567 NE567 500kHz) 100mA tone decoder ne567 567 tone decoder

    2SD2116

    Abstract: No abstract text available
    Text: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0


    Original     		PDF EN3203 2SD2116 2SD2116] 2SD2116

    OMA120

    Abstract: FZT605 FZT604 FZT705 ARAA 14ge
    Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705


    Original     		PDF OT223 FZT604 FZT604 FZ1704 FZT605 FZT705 FZT605 FZTBI14 OMA120 FZT705 ARAA 14ge

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO -400 V


    Original     		PDF ZTX558 200mA 100ms

    ZTX558

    Abstract: medium power high voltage transistor DSA003769
    Text: ZTX558 TYPICAL CHARACTERISTICS VCE sat - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps)


    Original     		PDF ZTX558 200mA -50mA, -100mA, -10mA, 20MHz -100V -10mA ZTX558 medium power high voltage transistor DSA003769

    VP3203N3-G

    Abstract: No abstract text available
    Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP3203 VP3203 O-243AA OT-89) O-243, DSFP-VP3203 A020408 VP3203N3-G

    gsm signal amplifier

    Abstract: Power Amplifier Module for GSM gsm 0308 DLT3202 GSM900 GSM RF module
    Text: Preliminary DLT3202 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT3202 is a triple-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM900 and


    Original     		PDF DLT3202 GSM900 DCS1800/PCS1900 DLT3202 gsm signal amplifier Power Amplifier Module for GSM gsm 0308 GSM RF module

    SmartDie

    Abstract: 240486 Intel486TM PROCESSOR FAMILY 242202
    Text: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 GX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers


    Original     		PDF Intel486TM 32-Bit 16-Bit SmartDie 240486 Intel486TM PROCESSOR FAMILY 242202

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating


    OCR Scan     		PDF KTA1271 Symbo25Â -10mAIb -100mA -700mA -20mA -10mA -10Vfi

    3203 NPN

    Abstract: 2SD2116 3203 transistor transistor 3203
    Text: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C


    OCR Scan     		PDF 2SD2116 3203 NPN 3203 transistor transistor 3203

    sda 3203

    Abstract: TA-317 14 PIN IC transistor 3203 SDA3203 fta satellite TA-317 TA317 suen
    Text: SIEM ENS SDA 3203 1.3 GHz PLL with 3-Wire Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Command Transmission Via a 3-Wire Bus • Prescaler Output Frequency is Free from Interference Radiation • 4 Software-Controlled Outputs


    OCR Scan     		PDF Q67000-A2526 sda 3203 TA-317 14 PIN IC transistor 3203 SDA3203 fta satellite TA-317 TA317 suen

    transistor 2sc 3203

    Abstract: transistor 3203 2sc3203 transistor 3203 y
    Text: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )


    OCR Scan     		PDF 600mW, 800mA 500mA, Ta-25Â 100mA 700mA Ic-10mA transistor 2sc 3203 transistor 3203 2sc3203 transistor 3203 y

    ZTX558

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATU RES * 400 V o lt V CE0 * 2 0 0 m A c o n tin u o u s c u rre n t * P ,o t= 1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R


    OCR Scan     		PDF ZTX558 -10mA* -100jiA -320V -20mA, -50mA, -100mA, ZTX558

    ztx558

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATURES * 400 V olt VCE0 * 200m A continuous current * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF ZTX558 001G35S ztx558

    2sc3203

    Abstract: 2sa1271
    Text: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .


    OCR Scan     		PDF 2SA127I 600mW, 800mA 500mA, 2SC3203 --35V, 100mA -700m 2sc3203 2sa1271

    604f

    Abstract: t605
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT604 FZT605 ISSUE 3 - OCTOBER 1995_ F E A TU R E S * G u a ra n te e d hFE S p e c ifie d up to 2A * Fast S w itc h in g P A R T M A R K IN G D E TA IL - D EVICE TY P E IN FU LL


    OCR Scan     		PDF OT223 FZT604 FZT605 300ns, FZT605 604f t605

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		PDF bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98

    Untitled

    Abstract: No abstract text available
    Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed


    OCR Scan     		PDF NE98108 NE98141 NE981 NE98141 s-117

    irp833

    Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
    Text: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 RF832 irp833 JRF830 IRF830 3203 MOSFET IRF831 RF832 mosfet jrf830 F832

    TRANSISTOR C 3205

    Abstract: data sw 3205 vent-captor Weber Sensors 320203 3205 transistor C 3205 curent sensor industrial air conditioning diagrams FLOW captor
    Text: weber Engineered Solutions copter vent-captor Type 3202.- & Type 3205. The vent-captor type 3 2 0 2 .- is a solid-state tlow-m onitor for gaseous media in industrial applications. Being totally encapsulated in epoxy resin with no moving parts, this small,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VP3203 yjß S u p e rte x in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering nformation Order Number / Package BV0SS/ ^ D S O N ' d (ON ) BVDgs (max) (min) TO-92 TO-243AA* Dice* -30V 0.6Q 4.0A VP3203N3 VP3203N8 VP3203ND * Sam e as SOT«89. * MIL visual screening available.


    OCR Scan     		PDF VP3203 VP3203N3 O-243AA* VP3203N8 VP3203ND

    Untitled

    Abstract: No abstract text available
    Text: BiMOS U DUAL 8-BIT LATCHED DRIVER WITH READ BACK With 16 CMOS data latches two sets of eight , CMOS control circuitry for each set of latches, and a bipolar saturated driver for each latch, the UCN5881EP provides low-power interface with maximum flexibility. The driver includes thermal shutdown circuitry to protect


    OCR Scan     		PDF UCN5881EP