2SK2687-01
Abstract: 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
2SK2687-01
2SK2688-01L
2SK2689-01MR
2SK2806-01
2SK2807-01L
2SK2808-01MR
2SK2890-01MR
2SK2892-01R
2SK3363-01
F7007N
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Untitled
Abstract: No abstract text available
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type Volts Amps. 5x2 Amps. RDS on Max. ＊1 Ohms (Ω) 7 60
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
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D2PACK
Abstract: STB10NA40
Text: STB10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB10NA40
100oC
O-262)
O-263)
D2PACK
STB10NA40
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D2PACK
Abstract: STB7NA40
Text: STB7NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB7NA40 400 V <1Ω 6.5 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB7NA40
100oC
O-262)
O-263)
D2PACK
STB7NA40
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STB7NA40
Abstract: No abstract text available
Text: STB7NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB7NA40 n n n n n n n n n V DSS R DS on ID 400 V < 1Ω 6.5 A TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES
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STB7NA40
100oC
O-262)
O-263)
STB7NA40
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TO-262 Package
Abstract: STB10NA40
Text: STB10NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 n n n n n n n n n V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB10NA40
100oC
O-262)
O-263)
TO-262 Package
STB10NA40
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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D2PACK
Abstract: D2-PACK
Text: MCC LM317DT omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • With D2-PACK package Output voltage range: 1.2V to 37V Output current in excess of 1.5A
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LM317DT
500mA,
120Hz,
10Hz-10kHz
1000H
D2PACK
D2-PACK
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Diode SJ
Abstract: D2-PACK mosfet power amplifier 2SK3272-01L Sj 35 diode
Text: 2SK3272-01L,S,SJ 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof See to P4 Applications Switching regulators DC-DC converters
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2SK3272-01L
Diode SJ
D2-PACK
mosfet power amplifier
Sj 35 diode
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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Untitled
Abstract: No abstract text available
Text: MCC Features • • • • MBRB10200CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# 10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volts Metal of Silicon Rectifier, Majority Carrier Conducton
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MBRB10200CT
Curr02
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Untitled
Abstract: No abstract text available
Text: MCC MBRB3030CT THRU MBRB3045CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • 30 Amp Schottky Metal of Silicon Rectifier, Majority Carrier Conducton
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MBRB3030CT
MBRB3045CT
MBRB3040CT
MBRB3060CT
MBRB3020CT-MBRB3040CT
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components MBRB820 THRU MBRB8100 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • 8.0 Amp Schottky Low Power Loss High Efficiency Low Leakage Current
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MBRB820
MBRB8100
MBRB830
MBRB840
MBRB850
MBRB860
MBRB880
100OC
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Untitled
Abstract: No abstract text available
Text: MCC MBRB1030CT THRU MBRB1045CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • 10 Amp Schottky Meatl of Silicon Rectifier, Majority Conducton Guard ring for transient protection
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MBRB1030CT
MBRB1045CT
MBRB1035CT
MBRB1040CT
300us
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Untitled
Abstract: No abstract text available
Text: MCC MBRB3030CT THRU MBRB3045CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • 30 Amp Schottky Metal of Silicon Rectifier, Majority Carrier Conducton
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MBRB3030CT
MBRB3045CT
MBRB3040CT
MBRB3040CT
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Untitled
Abstract: No abstract text available
Text: MCC MBRB820 THRU MBRB8100 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • 8.0 Amp Schottky Low Power Loss High Efficiency Low Leakage Current High Current Capability
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MBRB820
MBRB8100
MBRB830
MBRB840
MBRB850
MBRB860
MBRB880
100OC
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MBRB10100CT Features • • • • 10 Amp Schottky Barrier Rectifier 100 Volts Metal of Silicon Rectifier, Majority Carrier Conducton Low Power Loss
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MBRB10100CT
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Untitled
Abstract: No abstract text available
Text: MCC MBRB2520CT THRU omponents 20736 Marilla Street Chatsworth !"# $ % !"# MBRB2560CT Features • • • • • 30 Amp Schottky Meatl of Silicon Rectifier, Majority Conducton Guard ring for transient protection
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MBRB2520CT
MBRB2560CT
MBRB2530CT
MBRB2535CT
MBRB2540CT
MBRB2545CT
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Untitled
Abstract: No abstract text available
Text: MCC MBRB2520 omponents 20736 Marilla Street Chatsworth !"# $ % !"# THRU MBRB25100 Features • • • • • 25 Amp Schottky Meatl of Silicon Rectifier, Majority Conducton Guard ring for transient protection
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MBRB2520
MBRB25100
MBRB2520
MBRB2530
MBRB2535
MBRB2540
MBRB2545
MBRB2560
MBRB2580
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Untitled
Abstract: No abstract text available
Text: MCC MBRB1520CT THRU MBRB15100CT omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • 15 Amp Schottky Meatl of Silicon Rectifier, Majority Conducton
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MBRB1520CT
MBRB15100CT
MBRB1530CT
MBRB1535CT
MBRB1540CT
MBRB1545CT
MBRB1560CT
MBRB1580CT
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Untitled
Abstract: No abstract text available
Text: f Z Ä 7 S G S -T H O M S O N 7 # u D m o is L io T r ^ M e i S T B 1 0 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB10NA40 V dss RdS od Id 400 V < 0.55 a 10 A • . . . . . B . TYPICAL Rds(oii) = 0.46 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STB10NA40
O-262)
O-263)
O-263
O-262
7T2T237
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Untitled
Abstract: No abstract text available
Text: r z Ä 7 S C S - T H O T # M S O N r a ig ^ lIU lC T ^ O iD iE l S T B 7 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB7NA40 V dss RDS on Id 400 V < 1Q 6.5 A . . . . • . . . TYPICAL Ros(on) = 0.82 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STB7NA40
O-262)
O-263)
O-263
O-262
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Untitled
Abstract: No abstract text available
Text: Z i! SGS-THOMSON R aD eæ i[Liera iD ei STB 10 N A 40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V TYP E STB10NA40 dss 400 V RD S on Id < 0.5 5 Ç1 10 A • ■ . . ■ . . . TYPICAL RDS(on) = 0.46 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STB10NA40
O-262)
O-263)
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